Power Field-Effect Transistors componentes electrónicos en stock
ComSIT dispone de 3,798 números de parte de power field-effect transistors (3,316 disponibles en stock) de 57 fabricantes. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Haga clic en un número de parte para ver las especificaciones completas, el estado del ciclo de vida y solicitar una cotización.
Classification: Semiconductors > Transistors > Power Field-Effect Transistors
Power Field-Effect Transistors por fabricante
- Infineon (1,003)
- Vishay (729)
- ST Micro (576)
- Onsemi (342)
- IR (302)
- Fairchild Semi (137)
- Toshiba (105)
- Alpha Omega (78)
- Nexperia (67)
- Siliconix (64)
- Diodes (61)
- NXP (56)
- Renesas (52)
- Harris (23)
- Siemens (21)
- Magnachip (20)
- Rohm (17)
- Kec Corp (16)
- IXYS (15)
- Taiwan Semi (15)
- TI (12)
- Littelfuse (11)
- IR-HiRel (9)
- General Semi (8)
- Intersil (7)
- Motorola (6)
- National (5)
- Philips Semi (5)
- Renesas Tech (5)
- Samsung (5)
- Semikron (5)
- Fuji Elec (4)
- Microchip (4)
- Supertex (4)
- Shindengen (3)
- Wolfspeed (3)
- Zetex (3)
- Cissoid (2)
- Microsemi (2)
- NJ Semi (2)
- Sansha Electric (2)
- Telefunken Mic (2)
- Thomson Elec (2)
- USCI (2)
- Advanced power (1)
- Analog Power (1)
- Efficient Corp (1)
- Fortune (1)
- Freescale (1)
- Hitachi (1)
- NA Philips (1)
- Navitas (1)
- Panjit (1)
- Sanyo Semi (1)
- Torex (1)
- TT Electronics (1)
- Vishay Semi (1)
| No. de Parte | Fabricante | Descripción | Disponibilidad |
|---|---|---|---|
| STL220N6F7 | ST Micro | Power Field-Effect Transistor, 120A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,008,000 |
| FDWS86368-F085H | Onsemi | Power Field-Effect Transistor, 80A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 402,000 |
| AM30N06-39D | Analog Power | Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 357,524 |
| STD6N52K3 | ST Micro | Power Field-Effect Transistor, 5A I(D), 525V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 340,000 |
| BSP318SE6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 325,246 |
| SCT070H120G3AG | ST Micro | Power Field-Effect Transistor | 308,998 |
| STN4NF03L | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 280,000 |
| FDMS9410-F085 | Onsemi | Power Field-Effect Transistor | 207,000 |
| SUD35N05-26L-E3 | Vishay | Power Field-Effect Transistor, 35A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150,000 |
| RF1S30N06LESM9A | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 149,972 |
| BUZ12 | Siemens | Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130,956 |
| BUK9540-100A | Philips Semi | Power Field-Effect Transistor, 37A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 119,695 |
| AUIRLU3114Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 108,188 |
| NVMFS5C460NLWFT3G | Onsemi | Power Field-Effect Transistor, 78A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100,000 |
| RFP30N06LE | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 96,294 |
| AUIRLR2905ZTRL | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 96,000 |
| DMN2058U-13 | Diodes | Power Field-Effect Transistor, 4.6A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 94,945 |
| BTS110 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 91,194 |
| AON2420 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 30V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 81,000 |
| AUIRFN8458TR | IR | Power Field-Effect Transistor | 80,000 |
| RLD03N06CLESM9A | Fairchild Semi | Power Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 66,900 |
| DMP3160L-7 | Diodes | Power Field-Effect Transistor, 2.7A I(D), 20V, 0.122ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 66,000 |
| MCH3421-TL-E | Onsemi | Power Field-Effect Transistor, 0.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 63,000 |
| DMN6040SFDE-7 | Diodes | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 61,500 |
| 2SK945 | Toshiba | Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 59,500 |
| BUK9675-55 | NXP | Power Field-Effect Transistor, 19.7A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 57,390 |
| SQ2389ES-T1_GE3 | Vishay | Power Field-Effect Transistor | 56,975 |
| RFD8P05SM9A | Harris | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 56,015 |
| IPD90N04S4-02 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 55,000 |
| MTD3055VLT4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 54,710 |
| IRLR024TRPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 53,970 |
| SQJ968EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 53,895 |
| SI7315DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 51,000 |
| NVD4810NT4G-VF01 | Onsemi | Power Field-Effect Transistor, 9A I(D), 30V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50,000 |
| RFD15P05SM9A | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50,000 |
| 2SK1579DYTR-E | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 48,000 |
| IPD26N06S2L-35 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 47,903 |
| FDD8896 | Onsemi | Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 47,395 |
| TPIC5201KC | TI | Power Field-Effect Transistor, 7.5A I(D), 60V, 0.125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,387 |
| BTS410E | Siemens | Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,300 |
| BUK9635-55 | NXP | Power Field-Effect Transistor, 34A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,200 |
| BUK9107-40ATC | NXP | Power Field-Effect Transistor, 75A I(D), 40V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 46,400 |
| BUZ104S | Infineon | Power Field-Effect Transistor, 13.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 46,237 |
| BUK9640-100A,118 | Nexperia | Power Field-Effect Transistor, 39A I(D), 100V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45,748 |
| SPD07N60S5 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 45,500 |
| NVD5890NLT4G | Onsemi | Power Field-Effect Transistor, 123A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45,000 |
| SI3455DV-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 45,000 |
| BTS100 | Infineon | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 44,173 |
| DMP2066LSS-13 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 42,340 |
| 2SK2741 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 42,000 |
| IRLL024NPBF | Infineon | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 39,740 |
| IPP77N06S2-12 | Infineon | Power Field-Effect Transistor, 77A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 39,500 |
| IPI70N04S406AKSA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 38,550 |
| RFD10P03LSM9A | Harris | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 38,230 |
| BUK9230-55A | Nexperia | Power Field-Effect Transistor, 38A I(D), 55V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 37,725 |
| SQ2308ES-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 36,495 |
| DMT5015LFDF-7 | Diodes | Power Field-Effect Transistor, 9.1A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 36,000 |
| CPH6442-TL-W | Onsemi | Power Field-Effect Transistor, 6A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 35,400 |
| BUZ10 | Siemens | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 35,025 |
| FDS6982AS | Onsemi | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 35,000 |
| GF4410 | General Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 34,990 |
| SI4416DY-T1 | Siliconix | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 34,360 |
| STD3NK60ZT4 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 33,089 |
| IRF7101TR | IR | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 33,083 |
| IRLL014TR | Siliconix | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 32,090 |
| BUK9575-100A | Nexperia | Power Field-Effect Transistor, 23A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 32,001 |
| PHB11N06LT | NXP | Power Field-Effect Transistor, 10.3A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 32,000 |
| IRF7811WTRPBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 31,794 |
| RFP12N10L | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 31,785 |
| STD19NE06L-1 | ST Micro | Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 31,039 |
| BUK9635-55A/T3 | Nexperia | Power Field-Effect Transistor, 34A I(D), 55V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30,400 |
| IPA50R380CE | Infineon | Power Field-Effect Transistor, 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 29,400 |
| BUZ11 | ST Micro | Power Field-Effect Transistor, 33A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28,577 |
| NVMFS6H824NWFT1G | Onsemi | Power Field-Effect Transistor, 103A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 28,000 |
| PHD3N20E | NXP | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 27,480 |
| BSC093N04LSG | Infineon | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 27,420 |
| SI6966EDQ-T1 | Siliconix | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 26,735 |
| STB11NK40ZT4 | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 26,000 |
| 2SK2865(TE16L1,NQ) | Toshiba | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 25,837 |
| IRFIZ24NPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 25,388 |
| STP14NK50ZFP | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 25,200 |
| STB4NK60Z-1 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 25,000 |
| AUIRF7759L2TR | IR | Power Field-Effect Transistor, 375A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 24,830 |
| FQU5N60CTU | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,821 |
| FQB34P10TM-F085 | Onsemi | Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 24,542 |
| BTS244ZE-3062A | Infineon | Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,140 |
| AUIRF1404ZSTRL | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| IRFR120TRRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 24,000 |
| SI7450DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SIA437DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 29.7A I(D), 20V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SIS412DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SQ2315ES-T1_GE3 | Vishay | Power Field-Effect Transistor | 24,000 |
| BTS113AE3045A | Infineon | Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 23,859 |
| STD4NK80ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 23,465 |
| PMPB85ENEA | NXP | Power Field-Effect Transistor | 23,342 |
| BUK7208-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.0156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 22,500 |
| PHN1013 | NXP | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 22,450 |
| IRFR5305TRPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 22,230 |
| FQP9N90C | Onsemi | Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 21,050 |
| SI2306BDS-T1-GE3 | Vishay | Power Field-Effect Transistor | 21,000 |
| SI6465DQ-T1 | Siliconix | Power Field-Effect Transistor, 8.8A I(D), 8V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 21,000 |
| BSP124 | NXP | Power Field-Effect Transistor, 0.25A I(D), 250V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20,915 |
| IPB80N04S4-03 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 20,000 |
| IRFBE30SPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20,000 |
| SPB80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 20,000 |
| FDC608PZ | Onsemi | Power Field-Effect Transistor, 5.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 19,310 |
| IRLI640GPBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19,000 |
| FDC642P-F085P | Onsemi | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 18,629 |
| IPI90N04S4-02 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 18,250 |
| IRF7707TRPBF | IR | Power Field-Effect Transistor, 7A I(D), 20V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA | 18,165 |
| FQD12N20LTF | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 18,000 |
| IRFR220TRPBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 18,000 |
| SQJ910AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18,000 |
| STP10NK60ZFP | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17,843 |
| NVMFS6H824NT1G | Onsemi | Power Field-Effect Transistor, 103A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,820 |
| BUK7Y28-75B | Nexperia | Power Field-Effect Transistor, 35.5A I(D), 75V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,760 |
| GF4412 | General Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,500 |
| STD80N4F6 | ST Micro | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 17,500 |
| BUZ73A | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17,341 |
| FDY1002PZ | Fairchild Semi | Power Field-Effect Transistor, 0.83A I(D), P-Channel, Metal-oxide Semiconductor FET | 17,200 |
| PMZ270XN | Nexperia | Power Field-Effect Transistor, 2.15A I(D), 20V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,104 |
| IRFR3607TRPBF | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 16,805 |
| IRL530NSTRL | IR | Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 16,800 |
| BUZ104 | Infineon | Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 16,000 |
| IRF7805TRPBF | Infineon | Power Field-Effect Transistor, 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 16,000 |
| SUD45P03-09-GE3 | Vishay | Power Field-Effect Transistor, 45A I(D), 30V, 0.0087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 16,000 |
| BUK452-100A | NXP | Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,950 |
| EPC2111 | Efficient Corp | Power Field-Effect Transistor, 16A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Gallium Nitride, High Electron Mobility FET | 15,930 |
| SUB75N03-07 | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 15,875 |
| STP40NF12 | ST Micro | Power Field-Effect Transistor, 40A I(D), 120V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,489 |
| STD17NF03L-1 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 15,450 |
| BSL211SPH6327 | Infineon | Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 15,000 |
| IPB100N04S4-H2 | Infineon | Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 15,000 |
| SIA431DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), -20V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 15,000 |
| STP80NF03L-04 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,000 |
| BUZ71 | Siemens | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,968 |
| NVD5890NT4G-VF01 | Onsemi | Power Field-Effect Transistor | 14,920 |
| STP5NK52ZD | ST Micro | Power Field-Effect Transistor | 14,850 |
| SPP20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,815 |
| FDD8647L | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 14,795 |
| STW80NE06-10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 14,760 |
| STD17NF03LT4 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 14,625 |
| STD3NK60Z-1 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 14,625 |
| IRF510PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,600 |
| BSP315E6327 | Infineon | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 14,585 |
| DMTH4007LPS-13 | Diodes | Power Field-Effect Transistor, 15.5A I(D), 40V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 14,289 |
| STD2NK90Z-1 | ST Micro | Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 14,237 |
| VNP28N04-E | ST Micro | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 14,000 |
| XP132A1635SR | Torex | Power Field-Effect Transistor | 14,000 |
| SPD30N03L | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 13,780 |
| IPD25N06S4L30ATMA2 | Infineon | Power Field-Effect Transistor, 25A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 13,425 |
| IRF7306TRPBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 13,210 |
| STD6NM60N-1 | ST Micro | Power Field-Effect Transistor, 4.6A I(D), 600V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 13,094 |
| BST82 | Philips Semi | Power Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 13,060 |
| AO4466 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,885 |
| BUK9640-100A | Nexperia | Power Field-Effect Transistor, 39A I(D), 100V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,685 |
| RFD3N08LSM9A | Fairchild Semi | Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,598 |
| BUK7624-55A | Nexperia | Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,540 |
| PHD2N50E | NXP | Power Field-Effect Transistor, 2A I(D), 500V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,500 |
| AUIRLR3410 | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,424 |
| STD4NK50ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,385 |
| MTD3055VL-1 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,295 |
| BF964 | Telefunken Mic | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 12,163 |
| 2N7002BKV | Nexperia | Power Field-Effect Transistor | 12,000 |
| IRF7379TR | IR-HiRel | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 12,000 |
| IRFR210TRPBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,000 |
| IRFR220TRLPBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 12,000 |
| IRLHM620TRPBF | IR | Power Field-Effect Transistor, 26A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,000 |
| SQ3426AEEV-T1_GE3 | Vishay | Power Field-Effect Transistor | 12,000 |
| SQD10N30-330H_GE3 | Vishay | Power Field-Effect Transistor | 12,000 |
| STF6N65K3 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 650V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 12,000 |
| STL4P2UH7 | ST Micro | Power Field-Effect Transistor, 4A I(D), 20V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 12,000 |
| BUK7275-100A | NXP | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 11,810 |
| IRF7416TRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 11,740 |
| IRLR3802PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 11,700 |
| PHP18NQ10T | Nexperia | Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,650 |
| IRF7205TR | IR | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 11,645 |
| STY139N65M5 | ST Micro | Power Field-Effect Transistor, 130A I(D), 650V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,400 |
| STD2NK90ZT4 | ST Micro | Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 11,344 |
| SPD09P06PLG | Infineon | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 11,288 |
| STD4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 11,175 |
| STD3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,151 |
| IRLU3802PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 11,025 |
| IRF620PBF | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 11,000 |
| RFD14N05L | Onsemi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 10,950 |
| IRFI730GPBF | Vishay | Power Field-Effect Transistor, 3.7A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,900 |
| STP8NM50N | ST Micro | Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,900 |
| BUZ73AL | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,880 |
| IRFR24N15DPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,725 |
| BUK7614-55A | Nexperia | Power Field-Effect Transistor, 73A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,562 |
| SUD08P06-155L-E3 | Vishay | Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,558 |
| IRLZ14PBF | Vishay | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,550 |
| STU5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 10,500 |
| SQ2308CES-T1_GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 10,409 |
| NP55N055SUG | Renesas | Power Field-Effect Transistor, 55A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,290 |
| STD5NK40ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,245 |
| IRFR024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,125 |
| NDT452AP | Onsemi | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 10,014 |
| SSU2N60 | Samsung | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,010 |
| 2SJ278MYTR | Renesas Tech | Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| AOD444 | Alpha Omega | Power Field-Effect Transistor, 12A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,000 |
| DMN1008UFDFQ-13 | Diodes | Power Field-Effect Transistor, 12.2A I(D), 12V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| FQD5N50CTM | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,000 |
| GF9926 | General Semi | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| IPB45N06S4L-08 | Infineon | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 10,000 |
| IRFR014TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,000 |
| STD10NF30 | ST Micro | Power Field-Effect Transistor, 10A I(D), 300V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,000 |
| IPD50N06S4L-08 | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 9,945 |
| GF4936 | General Semi | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,920 |
| BSZ034N04LSATMA1 | Infineon | Power Field-Effect Transistor, 19A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,818 |
| BF2040R-E6814 | Infineon | Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 9,715 |
| IRF1312S | IR | Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,700 |
| BF963 | Telefunken Mic | Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 9,684 |
| IPB80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 9,669 |
| SIR800ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 177A I(D), 20V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,668 |
| IRF7343PBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 9,630 |
| IRFL9014TR | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 9,610 |
| BSP149L6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,581 |
| IRFU420PBF | IR | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 9,525 |
| IRF740 | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9,490 |
| STP14NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9,350 |
| 2SK3067 | Toshiba | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,340 |
| IPD14N06S2-80 | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 9,335 |
| BSO604NS2 | Infineon | Power Field-Effect Transistor, 5A I(D), 55V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,300 |
| BUK763R1-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,271 |
| IRFZ24NSTRLPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,140 |
| MTD3055V | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,043 |
| SQS405CENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.015ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET | 9,020 |
| AON2406 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 20V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| IRFR310TRLPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 9,000 |
| IRLR3410TRRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 9,000 |
| SI6415DQ-T1-GE3 | Vishay | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SI7810DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SI7820DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SIS888DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.2A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SIS990DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SQ3456BEV-T1_GE3 | Vishay | Power Field-Effect Transistor, 0.0078A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| STU11N65M2 | ST Micro | Power Field-Effect Transistor | 9,000 |
| STU6N65M2 | ST Micro | Power Field-Effect Transistor | 9,000 |
| TSM3424CX6RF | Taiwan Semi | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| TSM3446CX6RF | Taiwan Semi | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| TSM6968DCARV | Taiwan Semi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| BTS114AE3045A | Siemens | Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,995 |
| SFR9024TM | Fairchild Semi | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 8,995 |
| SI7439DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 8,950 |
| BSO4822 | Infineon | Power Field-Effect Transistor, 12.7A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,940 |
| BSC100N03MSG | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,920 |
| IRFL210TR | Vishay | Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 8,865 |
| STD10PF06T4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 8,845 |
| IRFI840GLCPBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,750 |
| IRLU014PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 8,650 |
| IPB80N06S2-08 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 8,645 |
| HUF76633P3 | Fairchild Semi | Power Field-Effect Transistor, 39A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,497 |
| IRFR210 | IR | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 8,450 |
| STP11NK40Z | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,440 |
| STU16N65M2 | ST Micro | Power Field-Effect Transistor | 8,400 |
| IRF7404TR | IR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 8,375 |
| 2SK2604 | Toshiba | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,268 |
| SUM110P06-07L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 60V, 0.0069ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 8,240 |
| STD2NK60Z-1 | ST Micro | Power Field-Effect Transistor, 1.5A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 8,200 |
| SUP75N05-06A | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 8,150 |
| BUZ74 | Infineon | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,100 |
| PJW4N06A-AU_R2_000A1 | Panjit | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,035 |
| IPI80N04S403AKSA1 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 8,000 |
| IRF7101 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| IRFH5006TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| IRFI530N | Infineon | Power Field-Effect Transistor, 12A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,000 |
| IRFIZ24N | Infineon | Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,000 |
| IRLHM630TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| STH140N8F7-2 | ST Micro | Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 8,000 |
| STN1NF20 | ST Micro | Power Field-Effect Transistor, 1A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| BUK482-60A | NXP | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,955 |
| BSZ440N10NS3G | Infineon | Power Field-Effect Transistor, 5.3A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,915 |
| SUD35N10-26P-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 7,900 |
| FQD2N60CTF | Fairchild Semi | Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 7,890 |
| BSP171PL6327 | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,858 |
| IRFD9120 | Vishay | Power Field-Effect Transistor, 1A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,801 |
| BTS413A | Siemens | Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,790 |
| STB60NE06L-16T4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 7,710 |
| IRF7380TRPBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 7,695 |
| IRFI620GPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,650 |
| STD2HNK60Z-1 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 7,650 |
| IRF7807TRPBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,645 |
| SQS484EN-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,612 |
| DMN2040LTS-13 | Diodes | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| HUF76129D3ST | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,500 |
| MMSF5N03HDR2 | Onsemi | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHD6N10E | NXP | Power Field-Effect Transistor, 6.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHD9NQ20T | Nexperia | Power Field-Effect Transistor, 8.7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHN110 | NXP | Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 7,500 |
| SI4542DY-T1 | Vishay | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| STD18N65M5 | ST Micro | Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 7,500 |
| STD9N65M2 | ST Micro | Power Field-Effect Transistor | 7,500 |
| STD5NK50ZT4 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,495 |
| FQU1N60CTU | Onsemi | Power Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 7,340 |
| BUK221-50DY | NXP | Power Field-Effect Transistor, 4A I(D), 45V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,200 |
| IRF7306QTRPBF | IR | Power Field-Effect Transistor, 3.6A I(D), P-Channel, Metal-oxide Semiconductor FET | 7,190 |
| SUD40N10-25-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,184 |
| BUK456-200A | NXP | Power Field-Effect Transistor, 19A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,050 |
| IRFI520N | IR | Power Field-Effect Transistor, 7.6A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,039 |
| NDB6020P | Onsemi | Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,850 |
| NTD18N06T4G | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,817 |
| AON1611 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 20V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,791 |
| IRFB9N60APBF | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,786 |
| IRFR110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,750 |
| IRFR9020TRPBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,750 |
| BUZ100-E3044 | Infineon | Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,745 |
| BUK7608-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,704 |
| IRF7103QTRPBF | Infineon | Power Field-Effect Transistor, 3A I(D), N-Channel, Metal-oxide Semiconductor FET | 6,673 |
| IRFR310 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,636 |
| SPB04N60C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,600 |
| FDS6982 | Fairchild Semi | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,590 |
| IRCZ34 | Thomson Elec | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,550 |
| IRF7811AVPBF | Infineon | Power Field-Effect Transistor | 6,550 |
| FML19N50G | Fuji Elec | Power Field-Effect Transistor, 1.4A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,495 |
| SI2305DS-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 6,460 |
| IRFR220PBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,450 |
| ZVN2106GTA | Diodes | Power Field-Effect Transistor, 0.71A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,405 |
| IRFR420PBF | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,370 |
| HAT2165H-EL-E | Renesas | Power Field-Effect Transistor, 55A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,365 |
| SPP08N50C3 | Infineon | Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,344 |
| IRFR430APBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,225 |
| IRF610STRLPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,190 |
| IRF7103IPBF | IR | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,175 |
| CSD18531Q5A | TI | Power Field-Effect Transistor, 100A I(D), 60V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,129 |
| IRF7471TRPBF | IR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 6,110 |
| IRF7314TRPBF | Infineon | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 6,100 |
| IRFU9014PBF | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 6,099 |
| BTS112A | Infineon | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,097 |
| BUZ71A | ST Micro | Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,080 |
| NP90N055PUH-E1-AY | Renesas | Power Field-Effect Transistor | 6,060 |
| BTS247Z | Infineon | Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,046 |
| AO4476A | Alpha Omega | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| AO8822 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| AON6220 | Alpha Omega | Power Field-Effect Transistor, 48A I(D), 100V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| BSC150N03LDG | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| BSP318SL6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| DMG2307L-7 | Diodes | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| FDMC8884 | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| FDMS7580 | Onsemi | Power Field-Effect Transistor, 15A I(D), 25V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IPB80N04S4-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,000 |
| IRF1010ESTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IRFHS8242TR2PBF | IR | Power Field-Effect Transistor, 9.9A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IRFR9110TRLPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,000 |
| IRFU320PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 6,000 |
| IRLR014 | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,000 |
| MGSF2N02ELT1G | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 6,000 |
| PMPB33XN | Nexperia | Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| QS6J1TR | Rohm | Power Field-Effect Transistor, 1.5A I(D), 20V, 0.235ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI1012R | Vishay | Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| SI5415AEDU-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SI5429DU-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SI5459DU-T1-GE3 | Siliconix | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7148DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7634BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 22.5A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7904BDN-T1-E3 | Vishay | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIA527DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIAA40DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIDR626DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIHFR220TRL-GE3 | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,000 |
| SIHFR320-GE3 | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,000 |
| SIHJ6N65E-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 650V, 0.868ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIJ438DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIJ470DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIJ482DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| SIJA54DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIR172ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR606DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 37A I(D), 100V, 0.0162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR638DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.00088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR692DP-T1-RE3 | Vishay | Power Field-Effect Transistor, 24.2A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR788DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA10BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA12BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA52DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA54DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.00235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA58DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 109A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS176LDN-T1-GE3 | Vishay | Power Field-Effect Transistor, 42.3A I(D), 70V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS410DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS435DNT-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 20V, 0.0054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISA24DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH106DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 6,000 |
| SISH129DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.0114ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH402DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH410DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH434DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH617DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISS04DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 80A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQ3481EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C | 6,000 |
| SQ7414EN-T1-E3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ401EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ465EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ858AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 58A I(D), 40V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ952EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQS407ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQS415ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SSM3K16FU(TE85L) | Toshiba | Power Field-Effect Transistor, 0.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL4P3LLH6 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL51N3LLH5 | ST Micro | Power Field-Effect Transistor, 51A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL60N3LLH5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STL8N65M5 | ST Micro | Power Field-Effect Transistor, 1.4A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STL8P2UH7 | ST Micro | Power Field-Effect Transistor | 6,000 |
| STL9N60M2 | ST Micro | Power Field-Effect Transistor | 6,000 |
| STL9N65M2 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STP3NK50Z | ST Micro | Power Field-Effect Transistor | 6,000 |
| STU7N65M2 | ST Micro | Power Field-Effect Transistor | 6,000 |
| SI2306DS-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 5,950 |
| IRFR120ZTRPBF | Infineon | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,943 |
| IRF7470TRPBF | IR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,910 |
| SPD18P06PG | Infineon | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 5,900 |
| SQ2362ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 5,900 |
| STF7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,900 |
| STF2N62K3 | ST Micro | Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,850 |
| STD4NK60ZT4 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,838 |
| SI7421DN-T1-E3 | Vishay | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,815 |
| IRLR8259PBF | Infineon | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,775 |
| IRF540NSTRL | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,725 |
| SQS460EN-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,725 |
| 2SJ317NY | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,720 |
| STW10NK60Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 5,715 |
| IPB50N10S3L-16 | Infineon | Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,700 |
| S838T | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,700 |
| STP9NK50ZFP | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,700 |
| STU3LN62K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,700 |
| IRFI644GPBF | Vishay | Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,699 |
| FQU5N40TU | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,689 |
| IRLML6401TR | IR | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,680 |
| FDP2710 | Onsemi | Power Field-Effect Transistor, 50A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,648 |
| IRFR9024TRPBF | IR | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,625 |
| GFB50N03 | General Semi | Power Field-Effect Transistor, 50A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,600 |
| GFB70N03 | General Semi | Power Field-Effect Transistor, 70A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,600 |
| IRFD014 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,600 |
| 2SK2542 | Toshiba | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,563 |
| SQM40N15-38_GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,533 |
| FQD7P20TF | Fairchild Semi | Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,525 |
| IRFU024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 5,514 |
| SI4949EY | Siliconix | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,500 |
| FDY1002PZ | Onsemi | Power Field-Effect Transistor, -.83A I(D), -20V, 1.8ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,480 |
| IRFR220 | IR | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,458 |
| FDP3682 | Onsemi | Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,450 |
| RFD16N05SM9A | Intersil | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,415 |
| IRFR420 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,400 |
| DMG6968UQ-7 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,380 |
| STP4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,350 |
| IPD15N06S2L-64 | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,315 |
| SI4920DY-T1 | Vishay | Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 5,308 |
| TN5325N8-G | Microchip | Power Field-Effect Transistor, 0.316A I(D), 250V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 5,295 |
| SISH615ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,275 |
| IRLR3714ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,270 |
| STF8NM50N | ST Micro | Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,250 |
| IRFR210TR | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,245 |
| IPB90N06S4-04 | Infineon | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,220 |
| PHT6N06T | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,205 |
| SI4559ADY-T1-E3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,190 |
| FDS7064SN3 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,180 |
| NTD24N06LT4 | Onsemi | Power Field-Effect Transistor, 24A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,178 |
| IRFUC20PBF | Vishay | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,175 |
| SIHD14N60E-GE3 | Vishay | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,174 |
| BSC077N12NS3G | Infineon | Power Field-Effect Transistor, 98A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,150 |
| STP4NA40FI | ST Micro | Power Field-Effect Transistor, 2.8A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,150 |
| IRF7343TRPBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,145 |
| STS8DNF3LL | ST Micro | Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,135 |
| ZXMHC3A01T8TA | Diodes | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.12ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,027 |
| AOD2N100 | Alpha Omega | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,000 |
| AON7430 | Alpha Omega | Power Field-Effect Transistor, 34A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| AON7502 | Alpha Omega | Power Field-Effect Transistor, 30A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| BSC090N03MSG | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| BUK9275-100A | Nexperia | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| BUK9775-55A | NXP | Power Field-Effect Transistor, 11A I(D), 55V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| FDD8444L | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 40V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| HUFA76409D3ST | Intersil | Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| IPD50N03S4L-06 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| IRF6643TR1PBF | IR | Power Field-Effect Transistor, 6.2A I(D), 150V, 0.0345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| IRFBG30PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| IRFR3209A | Fairchild Semi | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| IRLR034A | Samsung | Power Field-Effect Transistor, 23A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,000 |
| MPS2907AG | Onsemi | Power Field-Effect Transistor | 5,000 |
| NVTFS5826NLTAG | Onsemi | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| PHP125 | NXP | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,000 |
| PHT6NQ10T | NXP | Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| RD3G400GNTL | Rohm | Power Field-Effect Transistor, 40A I(D), 40V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| SI4162DY-T1-GE3 | Vishay | Power Field-Effect Transistor, 19.3A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,000 |
| SI9410DY-T1 | Vishay | Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| SPD04N80C3 | Infineon | Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STB6N65M2 | ST Micro | Power Field-Effect Transistor | 5,000 |
| STD13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD1HN60K3 | ST Micro | Power Field-Effect Transistor | 5,000 |
| STD3LN62K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD3N62K3 | ST Micro | Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STD3NM60T4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD40NF03LT4 | ST Micro | Power Field-Effect Transistor, 40A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STD6NK50ZT4 | ST Micro | Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD7N52DK3 | ST Micro | Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STP3NB60 | ST Micro | Power Field-Effect Transistor, 3.3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| TPH12008NH | Toshiba | Power Field-Effect Transistor, 44A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| TPH4R10ANL | Toshiba | Power Field-Effect Transistor | 5,000 |
| TPH4R606NH | Toshiba | Power Field-Effect Transistor, 32A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| TSM090N08PQ56RLG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM120N10PQ56RLG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM4NB60CPROG | Taiwan Semi | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| TSM60N380CPROG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM6963SDCARV | Taiwan Semi | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| UPA2790GR-E1-A | Renesas | Power Field-Effect Transistor, 6A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 5,000 |
| SI4902DY | Vishay | Power Field-Effect Transistor, 6.7A I(D), N-Channel, Metal-oxide Semiconductor FET | 4,996 |
| IRF8714TRPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,980 |
| BUZ10L-E3045 | Infineon | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,974 |
| IRF7606TR | IR | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,970 |
| BTS240A | Infineon | Power Field-Effect Transistor, 58A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 4,950 |
| SI7716ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,941 |
| IPD80R2K8CE | Infineon | Power Field-Effect Transistor, 1.9A I(D), 800V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,930 |
| SUD50N02-09P | Vishay | Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,925 |
| AON7444 | Alpha Omega | Power Field-Effect Transistor, 33A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,900 |
| STD1NK80ZT4 | ST Micro | Power Field-Effect Transistor, 1A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,900 |
| IRFR3910TRPBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,880 |
| BSC190N15NS3G | Infineon | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,840 |
| 2SK2663 | Shindengen | Power Field-Effect Transistor, 1A I(D), 900V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,826 |
| FDS9926A | Onsemi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,810 |
| BUK7628-100A/T3 | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,800 |
| BUK9608-55A | Nexperia | Power Field-Effect Transistor, 125A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,800 |
| GFB75N03 | General Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,800 |
| HUF75829D3ST | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,800 |
| IRFPS3815PBF | Infineon | Power Field-Effect Transistor, 105A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,770 |
| IRFR024NTRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,745 |
| IXTA1N100P-TRL | Littelfuse | Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,745 |
| IRFPG30PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 4,710 |
| IRFD9110PBF | Vishay | Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,700 |
| FDB7030BL | Onsemi | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,695 |
| BSP315PL6327 | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,655 |
| AUIRLR120N | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,650 |
| RFP4N05 | Harris | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,641 |
| IRLU8256PBF | IR | Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,625 |
| RFD8P06LESM9A | Fairchild Semi | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,620 |
| SUD25N06-45L-E3 | Vishay | Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,598 |
| STB85NF55T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,580 |
| SI7850ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,570 |
| IRFU1010ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,549 |
| BUK7Y08-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 4,535 |
| IRL7486MTRPBF | Infineon | Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,520 |
| BUK6Y14-40P | Nexperia | Power Field-Effect Transistor, 64A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 4,500 |
| SPU02N60S5 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,500 |
| IPD30N10S3L-34 | Infineon | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 4,489 |
| STB21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,460 |
| FDD6637 | Fairchild Semi | Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,440 |
| BUK9880-55/CU | Nexperia | Power Field-Effect Transistor, 3.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,426 |
| FQD7N10LTM | Onsemi | Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,407 |
| IRF840LC | Siliconix | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,400 |
| STS5NF60L | ST Micro | Power Field-Effect Transistor, 5A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,395 |
| IRF1404S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,382 |
| IRFP140PBF | Vishay | Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 4,360 |
| IRFR120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,320 |
| STB36NM60ND | ST Micro | Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,315 |
| IRF3205ZPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,305 |
| IRLR120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,275 |
| IRLML6402TRPBF | Infineon | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 4,270 |
| IRFIBC30GPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,200 |
| BUK78150-55 | NXP | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,194 |
| STP11NM60ND | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,190 |
| MMDF2N02ER2 | Onsemi | Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,174 |
| IRF7601PBF | Infineon | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,160 |
| IRF7416 | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,159 |
| STP5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,150 |
| IRLR110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,125 |
| BSP100 | NXP | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,060 |
| IRLR3915PBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,050 |
| BSC050N03LSG | Infineon | Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,020 |
| SQ2361ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.177ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 4,011 |
| AOB298L | Alpha Omega | Power Field-Effect Transistor, 58A I(D), 100V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,000 |
| AOU4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 4,000 |
| AUIRF7303QTR | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRF7316QTR | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRF7343QTR | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRFN8401TR | Infineon | Power Field-Effect Transistor | 4,000 |
| FQPF10N50CF | Onsemi | Power Field-Effect Transistor, 10A I(D), 500V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRF7316TRPBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| IRF7809AVTRPBF | Infineon | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRF9952TR | IR-HiRel | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH5104TRPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH5220TRPBF | Infineon | Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7107TRPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7110TRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7188TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH8303TRPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFH8316TRPBF | Infineon | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM4231TRPBF | Infineon | Power Field-Effect Transistor, 22A I(D), 25V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM8228TRPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM830TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM8337TRPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHS8342TRPBF | Infineon | Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFR024TRPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRFR3504ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRFZ24N | Philips Semi | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRLH7134TRPBF | Infineon | Power Field-Effect Transistor, 26A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRLR014TR | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRLR2705TR | IR | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRLZ14STRLPBF | Vishay | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,000 |
| PHB37N06LT | NXP | Power Field-Effect Transistor, 37A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| SIHFR420TR-GE3 | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| SQD50N06-09L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,000 |
| STF20NF20 | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STF2LN60K3 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STF7N52K3 | ST Micro | Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STN4NF20L | ST Micro | Power Field-Effect Transistor, 1A I(D), 200V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| STP5N60M2 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STP75NF75FP | ST Micro | Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STP77N6F6 | ST Micro | Power Field-Effect Transistor, 77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| SUD40N08-16-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,000 |
| TSM4N90CIC0G | Taiwan Semi | Power Field-Effect Transistor | 4,000 |
| TSM7N90CIC0G | Taiwan Semi | Power Field-Effect Transistor | 4,000 |
| IRF7463PBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,990 |
| IPD25CN10NG | Infineon | Power Field-Effect Transistor, 35A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,980 |
| SI7190DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.4A I(D), 250V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,970 |
| STW15NB50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 3,940 |
| STH15NA50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 3,921 |
| FDD8424H | Onsemi | Power Field-Effect Transistor, 20A I(D), 40V, 0.024ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,917 |
| NP100N055PUH-E1-AY | Renesas | Power Field-Effect Transistor | 3,910 |
| STF5N95K3 | ST Micro | Power Field-Effect Transistor, 4A I(D), 950V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,900 |
| FQD9N25TM | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,889 |
| 2SK1585-T1-AZ | Renesas | Power Field-Effect Transistor, 1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,860 |
| STU9N60M2 | ST Micro | Power Field-Effect Transistor | 3,825 |
| IRFR224TRPBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,815 |
| IRF7809AVPBF | Infineon | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,802 |
| FDB7030L_NL | Fairchild Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,800 |
| IRFR420APBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,799 |
| FQD3N60CTM-WS | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,780 |
| IRFU120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,750 |
| STP11N60DM2 | ST Micro | Power Field-Effect Transistor | 3,750 |
| STP17NK40ZFP | ST Micro | Power Field-Effect Transistor, 15A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,750 |
| STD5NK40Z-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,745 |
| ZVN2120GTA | Diodes | Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,725 |
| IRF610 | Fairchild Semi | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,724 |
| BUZ72A | ST Micro | Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,719 |
| IRFR310PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,719 |
| IAUS300N10S5N015T | Infineon | Power Field-Effect Transistor | 3,704 |
| IRLH6224TRPBF | Infineon | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,700 |
| STP7NK80ZFP | ST Micro | Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,700 |
| IRLD014PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,695 |
| SI7850DP-T1-E3 | Vishay | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,680 |
| FDMC8854 | Onsemi | Power Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,670 |
| BUK7C06-40AITE | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,658 |
| NP88N055KUG-E1-AY | Renesas | Power Field-Effect Transistor, 88A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,655 |
| IRLHS6242TR2PBF | IR | Power Field-Effect Transistor, 10A I(D), 20V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,600 |
| STP8NM50 | ST Micro | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,600 |
| STU2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,600 |
| NVF2955T1G | Onsemi | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 3,597 |
| SI9948AEY-T1-E3 | Vishay | Power Field-Effect Transistor | 3,597 |
| IRF7413ZTRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,595 |
| STD17N06L | ST Micro | Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,580 |
| IRLU8259PBF | IR | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,575 |
| PHT8N06LT | NXP | Power Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,565 |
| IRF7495TR | IR | Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,560 |
| FQT7N10LTF | Fairchild Semi | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,555 |
| IPD90N04S3-04 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,545 |
| RFD8P05SM | Harris | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,517 |
| FDN5618P | Onsemi | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,513 |
| AOI4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251A | 3,500 |
| FQPF11P06 | Onsemi | Power Field-Effect Transistor, 8.6A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,500 |
| SIHP18N50C-E3 | Vishay | Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,500 |
| IRFIZ46NPBF | IR | Power Field-Effect Transistor, 33A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,498 |
| SPD08P06PG | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,469 |
| IRFZ44NSTRLPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,451 |
| IRL2203N | Infineon | Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,450 |
| IRFI9640GPBF | Vishay | Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,449 |
| IRFR3607PBF | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,443 |
| FQU13N10LTU | Onsemi | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,430 |
| SI7137DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,420 |
| STP20NF06L | ST Micro | Power Field-Effect Transistor, 20A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,420 |
| STF11N52K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,408 |
| BSP318SH6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,405 |
| IRFHM831TRPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,400 |
| STP4NK50ZD | ST Micro | Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,400 |
| STP22NF03L | ST Micro | Power Field-Effect Transistor, 22A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,367 |
| ZXMP6A16DN8TA | Diodes | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,360 |
| IPD35N10S3L-26 | Infineon | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,355 |
| MDF5N50BTH | Magnachip | Power Field-Effect Transistor | 3,350 |
| IRLD014 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,347 |
| IRF9Z24STRR | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,340 |
| SI7844DP-T1-E3 | Vishay | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,335 |
| BTS132E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 3,327 |
| IRF9910PBF | Infineon | Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,311 |
| SI4544DY | Siliconix | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,300 |
| STP5NK50ZFP | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,300 |
| BSP92E6327 | Infineon | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,295 |
| PHT6N06LT | Nexperia | Power Field-Effect Transistor, 2.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,295 |
| SI7450DP-T1 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,288 |
| IRF7805TR | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,278 |
| SI9945AEY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,275 |
| IRFU9212 | IR | Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,257 |
| IRF3707PBF | IR | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,250 |
| IRFR9014TR | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,214 |
| IRF820STRLPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRF840STRLPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRFH7936TRPBF | IR | Power Field-Effect Transistor, 76A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,200 |
| IRFHS8342TR2PBF | IR | Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRFR120TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,200 |
| IRL3714ZPBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,200 |
| IRFU210PBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,199 |
| FQP33N10 | Onsemi | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,195 |
| NTMFS4927NT3G | Onsemi | Power Field-Effect Transistor | 3,190 |
| STL120N4F6AG | ST Micro | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,181 |
| IRF7821TRPBF | Infineon | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,170 |
| MMSF3P02HDR2 | Onsemi | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,165 |
| FDS4435BZ | Onsemi | Power Field-Effect Transistor | 3,164 |
| BSP613PL6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,160 |
| AUIRF3315S | Infineon | Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,150 |
| IRF730ASPBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,150 |
| STP11NK40ZFP | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,150 |
| MTP12N10E | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,143 |
| BUK98150-55 | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,135 |
| CSD18503Q5A | TI | Power Field-Effect Transistor, 100A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,129 |
| IRFP254PBF | Vishay | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 3,125 |
| FQU5N60C | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,124 |
| IRF8313TRPBF | IR | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,120 |
| IRF7831TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,118 |
| FQP32N20C | Onsemi | Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,115 |
| DMN6040SK3-13 | Diodes | Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,100 |
| MTB30P06VT4G | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,100 |
| SI7121DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 10.6A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,085 |
| IRF7530TRPBF | IR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,068 |
| NDS9952 | National | Power Field-Effect Transistor, 3A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,055 |
| IRL3714ZSPBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,035 |
| IRF7353D2TR | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,025 |
| SPN01N60C3 | Infineon | Power Field-Effect Transistor, 0.3A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,010 |
| 2SJ296(S)TL | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| 2SK2796STL-E | Renesas | Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO4406 | Alpha Omega | Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO4840 | Alpha Omega | Power Field-Effect Transistor, 6A I(D), 40V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO6424 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AO6804A | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 20V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AOL1414 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON1634 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 30V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON2403 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON2408 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 20V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON6156 | Alpha Omega | Power Field-Effect Transistor, 100A I(D), 45V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON6230 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AON6260 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AON6590 | Alpha Omega | Power Field-Effect Transistor, 100A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON7520 | Alpha Omega | Power Field-Effect Transistor, 50A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AOT15S60L | Alpha Omega | Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| AOTF11S60L | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| AUIRFS6535 | Infineon | Power Field-Effect Transistor, 19A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AUIRFZ44NS | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| BUK78150-55A | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| BUZ110SLE3045A | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| BUZ72-E3044 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMN1008UFDFQ-7 | Diodes | Power Field-Effect Transistor, 12.2A I(D), 12V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMN3020UFDF-7 | Diodes | Power Field-Effect Transistor, 15A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMP3100L-7 | Diodes | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| FDMC2512SDC | Onsemi | Power Field-Effect Transistor, 32A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 3,000 |
| FDMS0312S | Onsemi | Power Field-Effect Transistor, 19A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS3008SDC | Onsemi | Power Field-Effect Transistor, 29A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS7556S | Onsemi | Power Field-Effect Transistor, 35A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8025S | Onsemi | Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8027S | Onsemi | Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8558S | Onsemi | Power Field-Effect Transistor, 38A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8560S | Onsemi | Power Field-Effect Transistor, 35A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8570S | Onsemi | Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS86105 | Onsemi | Power Field-Effect Transistor, 6A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDPF5N50NZ | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| GFD30N03 | Vishay Semi | Power Field-Effect Transistor, 43A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| GFD50N03 | General Semi | Power Field-Effect Transistor, 65A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| IRF3315STRRPBF | IR | Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| IRF8915TRPBF | Infineon | Power Field-Effect Transistor, 8.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| IRFIBE30GPBF | Vishay | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| IRFR014TRLPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFR9014TRL | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFR9020PBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFRC20TRLPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFU220PBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| IRLR2905ZTRLPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRLU3715PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,000 |
| MDF13N50BTH | Magnachip | Power Field-Effect Transistor | 3,000 |
| SI1024X-T1-E3 | Vishay | Power Field-Effect Transistor, 0.485A I(D), N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SI1473DH-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI2318CDS-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 3,000 |
| SI5418DU-T1-GE3 | Siliconix | Power Field-Effect Transistor, 11.6A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5419DU-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5479DU-T1-E3 | Siliconix | Power Field-Effect Transistor, 16A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5504BDC-T1-GE3 | Vishay | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5515CDC-T1-GE3 | Siliconix | Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5517DU-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 20V, 0.039ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5902BDC-T1-GE3 | Siliconix | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7102DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 12V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7106DN-T1-E3 | Vishay | Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7115DN-T1-E3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7149DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.7A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7220DN-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SI7288DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 40V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7308DN-T1-E3 | Vishay | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7308DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7619DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 10.5A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7629DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7658ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 36A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7682DP-T1-E3 | Vishay | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7794DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7892BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7905DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 5A I(D), 40V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8429DB-T1-E1 | Vishay | Power Field-Effect Transistor, 7.8A I(D), 8V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8483DB-T2-E1 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8497DB-T2-E1 | Vishay | Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIA406DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA441DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 40V, 0.047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA462DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA920DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 8V, 0.027ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB408DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB414DK-T1-E3 | Vishay | Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIB417AEDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 8V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB457EDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE818DF-T1-E3 | Vishay | Power Field-Effect Transistor, 16A I(D), 75V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE818DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 75V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE832DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHD12N50E-GE3 | Vishay | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| SIHD1K4N60E-GE3 | Vishay | Power Field-Effect Transistor, 4.2A I(D), 600V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHD3N50D-GE3 | Vishay | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHD7N60E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHFR1N60A-GE3 | Vishay | Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIHH14N65E-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHJ10N60E-T1-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHJ8N60E-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SIHLR024TRL-GE3 | Vishay | Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIHLU014-GE3 | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| SIR158DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR164DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR402DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.7A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR418DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR424DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.4A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR466DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR616DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.2A I(D), 200V, 0.0535ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR642DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR800DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 35.4A I(D), 20V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA00DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 30V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA04DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA06DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS402DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS430DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS438DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.3A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS454DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SISS23DN-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SIZ904DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIZ920DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0071ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQ3419EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 6.9A I(D), 40V, 0.058ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA | 3,000 |
| SQ3461EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 12V, 0.025ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA | 3,000 |
| SQ7414AENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 3,000 |
| SQA403EJ-T1_GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ204EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 12V, 0.0083ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET | 3,000 |
| SQJ409EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ412EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ415EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ463EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 11A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ464EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ486EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ872EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 24.5A I(D), 150V, 0.0355ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ940EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 40V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ942EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJA37EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJA76EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 75A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJB70EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 11.3A I(D), 100V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQS944ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 40V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STB23NM50N | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| STB3NK60ZT4 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STF2HNK60Z | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STF5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STF5N62K3 | ST Micro | Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STFI16N65M2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STI4N62K3 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL10N3LLH5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL11N3LLH6 | ST Micro | Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL12N65M2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL13NM60N | ST Micro | Power Field-Effect Transistor, 1.9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL19N60DM2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL24N60M6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL40C30H3LL | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL40N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL45N10F7AG | ST Micro | Power Field-Effect Transistor, 18A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL45P3LLH6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL60N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL62P3LLH6 | ST Micro | Power Field-Effect Transistor, 62A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STL6P3LLH6 | ST Micro | Power Field-Effect Transistor, 6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STL7N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL9P2UH7 | ST Micro | Power Field-Effect Transistor, 9A I(D), 20V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STP62NS04Z | ST Micro | Power Field-Effect Transistor, 62A I(D), 33V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STU2N105K5 | ST Micro | Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STU3N65M6 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-251 | 3,000 |
| STU4N62K3 | ST Micro | Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| STU5N65M6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STU7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| TPCA8011-H(TE12L,Q) | Toshiba | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| TSM6968SDCARV | Taiwan Semi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AUIRLR024ZTRL | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,999 |
| STF8NM60ND | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,997 |
| NTDV20P06LT4G-VF01 | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,996 |
| AO4614B | Alpha Omega | Power Field-Effect Transistor, 6A I(D), 40V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,995 |
| STP5NB40 | ST Micro | Power Field-Effect Transistor, 4.7A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,990 |
| IRFP440PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,975 |
| IPI600N25N3G | Infineon | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,969 |
| BSP373NH6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,965 |
| BTS132 | Infineon | Power Field-Effect Transistor, 24A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,965 |
| IRFB4620PBF | Infineon | Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,945 |
| IRLMS6802TR | IR | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,945 |
| BSC014N06NS | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,940 |
| IRL7833PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,940 |
| BSP372NH6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,935 |
| IRLU024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,925 |
| STD7NM80-1 | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,925 |
| STU4N80K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,925 |
| SISA18ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,915 |
| SPD03N60C3 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,915 |
| AO4421 | Alpha Omega | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.04ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET | 2,900 |
| IRF820ALPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,900 |
| IRFBC30APBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| IRL3715ZPBF | IR | Power Field-Effect Transistor, 50A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| IRLMS2002TR | IR | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,900 |
| SIHB12N60E-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,900 |
| SIHP15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| STF40NF06 | ST Micro | Power Field-Effect Transistor, 23A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| DMP2035U-7 | Diodes | Power Field-Effect Transistor, 4.9A I(D), 20V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,895 |
| TP2504N8 | Supertex | Power Field-Effect Transistor, 1.2A I(D), 40V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 2,895 |
| TJ9A10M3 | Toshiba | Power Field-Effect Transistor, 9A I(D), 100V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,890 |
| IRLML5203TR | IR | Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,885 |
| BF998RW | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,875 |
| BF543B-GS08 | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,850 |
| IRF620SPBF | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,850 |
| IRFR224 | Siliconix | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,850 |
| IRFU3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,850 |
| IRLML2502TR | IR | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,850 |
| PHX14NQ20T | NXP | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,850 |
| SIHD6N65E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,850 |
| STD1NK60-1 | ST Micro | Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,850 |
| IRF9910TRPBF | IR | Power Field-Effect Transistor, 12A I(D), N-Channel, Metal-oxide Semiconductor FET | 2,849 |
| BUZ272 | Infineon | Power Field-Effect Transistor, 15A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,846 |
| IRFU420 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,829 |
| IRFR9N20DPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,825 |
| IRFU320 | Siliconix | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,825 |
| STP9NK50Z | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,818 |
| STF7N65M2 | ST Micro | Power Field-Effect Transistor | 2,801 |
| AUIRF1324S | Infineon | Power Field-Effect Transistor, 195A I(D), 24V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,800 |
| IRFH8337TR2PBF | IR | Power Field-Effect Transistor, 12A I(D), 30V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,800 |
| IRFI9630GPBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,800 |
| IRFIB6N60APBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,800 |
| STS17NF3LL | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,800 |
| BSP295L6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,798 |
| IRFPC50 | Vishay | Power Field-Effect Transistor, 11A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,795 |
| IRL540NSTRLPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,785 |
| BSP324H6327 | Infineon | Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,770 |
| FDP2532 | Onsemi | Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,756 |
| SQ7414EN-T1 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,755 |
| AUIRLR3705Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,750 |
| SI5499DC-T1-E3 | Siliconix | Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,750 |
| STP25N06 | ST Micro | Power Field-Effect Transistor, 25A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,744 |
| SMD10P06L | Siliconix | Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,732 |
| IRFR9220TRPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,727 |
| IRLR3410TRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,725 |
| FCA47N60 | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,722 |
| HUF75321D3ST | Onsemi | Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,720 |
| IRFP350 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 2,719 |
| RF1S9540SM9A | Intersil | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,718 |
| IRFP31N50LPBF | Vishay | Power Field-Effect Transistor, 31A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,707 |
| IPD600N25N3G | Infineon | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,705 |
| SI9945AEY-T1 | Vishay | Power Field-Effect Transistor, 3.7A I(D), N-Channel, Metal-oxide Semiconductor FET | 2,704 |
| AOTF22N50 | Alpha Omega | Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,700 |
| HUF76629D3S | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,700 |
| IRF710PBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,700 |
| IRLIZ44N | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,700 |
| SIHFR9220-GE3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,700 |
| SSM6J505NU,LF(T | Toshiba | Power Field-Effect Transistor, 12A I(D), 12V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,700 |
| SI3445DV | Vishay | Power Field-Effect Transistor, 5.6A I(D), 8V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,695 |
| BUZ215 | Siemens | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,694 |
| BSC031N06NS3G | Infineon | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,685 |
| BSP135L6327 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,685 |
| BUZ344 | Infineon | Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 2,672 |
| DMP3056LSD-13 | Diodes | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,650 |
| IRL530PBF | IR | Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,650 |
| DMN3150L-7 | Diodes | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,646 |
| IRFR014 | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,645 |
| SIA429DJT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 20V, 0.0205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,645 |
| STB60NF06T4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,640 |
| IRFU9210PBF | IR | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,625 |
| IRF7413TRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,618 |
| IRF710SPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,600 |
| IRF9Z14PBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,600 |
| SI7370DP-T1-E3 | Vishay | Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,600 |
| STF100N6F7 | ST Micro | Power Field-Effect Transistor | 2,600 |
| STL13N60M6 | ST Micro | Power Field-Effect Transistor | 2,600 |
| BTS115A-E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2,595 |
| BUK437-500B | NXP | Power Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,593 |
| BSP108 | NXP | Power Field-Effect Transistor, 0.5A I(D), 80V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,590 |
| STP14NF12FP | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,589 |
| BUK9K25-40E | NXP | Power Field-Effect Transistor | 2,585 |
| MTB75N05HDT4 | Onsemi | Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,580 |
| IRF7319TRPBF | Infineon | Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,560 |
| SI7370DP-T1 | Vishay | Power Field-Effect Transistor, 9.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,560 |
| AUIRF5305TRL | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,550 |
| IRLU3714ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,550 |
| BSP296E6327 | Infineon | Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,545 |
| IRF7904PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 10.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,545 |
| RS1L180GNTB | Rohm | Power Field-Effect Transistor, 18A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,540 |
| ZXMP6A17KTC | Diodes | Power Field-Effect Transistor, 4.4A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,535 |
| STD17N06 | ST Micro | Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,525 |
| AO4404 | Alpha Omega | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,515 |
| SUM60N04-12LT-E3 | Vishay | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,507 |
| IRL630SPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,505 |
| AO8808A | Alpha Omega | Power Field-Effect Transistor, 7.9A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET | 2,500 |
| AOD468 | Alpha Omega | Power Field-Effect Transistor, 11.5A I(D), 300V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD476 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD4S60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD7S65 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| BSO211P | Infineon | Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| BTS129 | Infineon | Power Field-Effect Transistor, 27A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| BUK9219-55A | Nexperia | Power Field-Effect Transistor, 55A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| DMP4051LK3-13 | Diodes | Power Field-Effect Transistor, 7.2A I(D), 40V, 0.051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD3N50NZTM | Onsemi | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD4N60NZ | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD5N50NZTM | Onsemi | Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD6612A | Onsemi | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD7N60NZTM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD8453LZ | Onsemi | Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD86113LZ | Onsemi | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDS6994S | Onsemi | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FDS7764A | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FDS89161LZ | Onsemi | Power Field-Effect Transistor, 2.7A I(D), 100V, 0.105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FQD1N80TM | Onsemi | Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FQD5N50TM | Fairchild Semi | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| HAT2168H-EL-E | Renesas | Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IPD65R400CE | Infineon | Power Field-Effect Transistor, 15.1A I(D), 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| IRFBC30ASPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IRFR024ATM | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,500 |
| IRLZ34PBF | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| IRLZ44PBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| MTD3055ELT4 | Motorola | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NDD04N50ZT4G | Onsemi | Power Field-Effect Transistor, 3A I(D), 500V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NDS8961 | Fairchild Semi | Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NTDV3055L104T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| PHD27NQ10T | NXP | Power Field-Effect Transistor, 28A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RDD022N60TL | Rohm | Power Field-Effect Transistor, 2A I(D), 600V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK0328DPB-01-J0 | Renesas | Power Field-Effect Transistor, 60A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK0656DPB-00-J5 | Renesas | Power Field-Effect Transistor, 40A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK1054DPB-00-J5 | Renesas | Power Field-Effect Transistor, 20A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RRH140P03GZETB | Rohm | Power Field-Effect Transistor, 14A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4304DY-T1-E3 | Vishay | Power Field-Effect Transistor, 24A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4420BDY-T1-E3 | Vishay | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4561DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.2A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 2,500 |
| SI4684DY-T1-E3 | Siliconix | Power Field-Effect Transistor, 16A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4936DY-T1-E3 | Vishay | Power Field-Effect Transistor, 5.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,500 |
| SI9933BDY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SIR866DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SPD14N06S2-80 | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| SQ4850EY-T1_GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STB80NF03L-04-1 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,500 |
| STD10LN80K5 | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD10N60M2 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD10NF10T4 | ST Micro | Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD10NM65N | ST Micro | Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| STD120N4F6 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD15N60M2-EP | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD15N65M5 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD16NF25 | ST Micro | Power Field-Effect Transistor, 13A I(D), 250V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD17NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD18NF03L | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD26P3LLH6 | ST Micro | Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD30NF03LT4 | ST Micro | Power Field-Effect Transistor, 30A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD3N65M6 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD47N10F7AG | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD4NS25T4 | ST Micro | Power Field-Effect Transistor, 4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD5N65M6 | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD7N60M2 | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD8NM60N | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STLD125N4F6AG | ST Micro | Power Field-Effect Transistor, 101A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STLD200N4F6AG | ST Micro | Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STP11NM60 | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| STS10P3LLH6 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,500 |
| STS11NF30L | ST Micro | Power Field-Effect Transistor, 11A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STS3DPF20V | ST Micro | Power Field-Effect Transistor, 3A I(D), 20V, 0.135ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STS4NF100 | ST Micro | Power Field-Effect Transistor, 4A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM4944DCSRL | Taiwan Semi | Power Field-Effect Transistor, 12.2A I(D), 30V, 0.0132ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM7401CSRL | Taiwan Semi | Power Field-Effect Transistor, 8A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM900N06CPROG | Taiwan Semi | Power Field-Effect Transistor | 2,500 |
| UPA2780GR | Renesas | Power Field-Effect Transistor, 14A I(D), 30V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| ZXMS6004DN8-13 | Diodes | Power Field-Effect Transistor, 60V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IRF5803TRPBF | IR | Power Field-Effect Transistor, 3.4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,499 |
| SIZ728DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,498 |
| BSC057N08NS3G | Infineon | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| IRFTS9342TRPBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| STD18N06LT4G-VF01 | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| IPB072N15N3G | Infineon | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,490 |
| IRFB4227PBF | Infineon | Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,490 |
| DMN10H170SK3-13 | Diodes | Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,480 |
| S886T | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,480 |
| STD18NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,480 |
| STU4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,475 |
| SI4836DY-T1 | Vishay | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,465 |
| RFD14N05 | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,461 |
| MDD14N25CRH | Magnachip | Power Field-Effect Transistor, 10.2A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,454 |
| BSP297L6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,450 |
| SMP60N03-10L | Siliconix | Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,439 |
| RFD14N05SM | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,435 |
| CSD25401Q3 | TI | Power Field-Effect Transistor, 14A I(D), 20V, 0.0182ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,430 |
| TSM042N03CSRLG | Taiwan Semi | Power Field-Effect Transistor, 30A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,426 |
| FDS8926A | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,425 |
| STN1HNK60 | ST Micro | Power Field-Effect Transistor, 0.4A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,410 |
| AUIRFR4620 | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| HUF75307D3ST | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| IRF9510STRRPBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| IRFBF20STRLPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| IRFH5306TR2PBF | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| IRL3202PBF | IR | Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,400 |
| NP15P06SLG-E1-AY | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| NVB072N65S3 | Onsemi | Power Field-Effect Transistor, 44A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| PHP20NQ20T | Nexperia | Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| RFD14N05LSM9A | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| SIRA01DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0049ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| SQM120N04-1M9_GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| STD3NK80Z-1 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,400 |
| STP80NF06 | ST Micro | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,400 |
| IRF6617TR1 | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET | 2,396 |
| IRF7404TRPBF | Infineon | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,395 |
| IRFR9024PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,378 |
| FDMS86101DC | Fairchild Semi | Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 2,376 |
| IRF7834PBF | Infineon | Power Field-Effect Transistor, 19A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,375 |
| SPD30P06P | Infineon | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,365 |
| IXTT6N120 | Littelfuse | Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA | 2,358 |
| IRFH8325TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,350 |
| IRFI520GPBF | Vishay | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,350 |
| STD5N20T4 | ST Micro | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,350 |
| IRF7603TR | IR | Power Field-Effect Transistor, 5.6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,348 |
| TK13A60D(Q) | Toshiba | Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,348 |
| BUK7628-100A | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,345 |
| STP7NK80Z | ST Micro | Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,340 |
| IPT059N15N3 | Infineon | Power Field-Effect Transistor, 155A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,325 |
| FQD5N60CTM | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,323 |
| ZVN4306A | Diodes | Power Field-Effect Transistor, 1.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,310 |
| SI7460DP-T1-E3 | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,307 |
| IRFP064PBF | Vishay | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,300 |
| IRF7306TR | IR | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,295 |
| IRFL014TR | Vishay | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 2,295 |
| BSP135H6327 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,290 |
| NDS9407 | Onsemi | Power Field-Effect Transistor | 2,290 |
| STP3NK90Z | ST Micro | Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,284 |
| HUF75309D3S | Harris | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,283 |
| SI4214DDY-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.0195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,280 |
| NTD5865NLT4G | Onsemi | Power Field-Effect Transistor, 40A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,270 |
| SQS405ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,261 |
| IRF840A | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,250 |
| IRFU9220PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,250 |
| IRLU7807ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,250 |
| STD7NK40ZT4 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,250 |
| SPD07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,245 |
| BUK964R2-55B | Nexperia | Power Field-Effect Transistor, 75A I(D), 50V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,244 |
| FQU8P10TU | Onsemi | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,240 |
| IRLL2703 | Infineon | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 2,240 |
| SI7848DP-T1-E3 | Vishay | Power Field-Effect Transistor, 10.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,235 |
| IRFZ44ZPBF | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,230 |
| NDS9933A | Fairchild Semi | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.14ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,230 |
| HAF2001-90 | Renesas | Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,227 |
| IRFR4104TR | IR-HiRel | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,225 |
| FQA13N80 | Fairchild Semi | Power Field-Effect Transistor, 12.6A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,220 |
| NDT2955 | Onsemi | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,220 |
| AUIRF3205ZS | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,210 |
| HUFA75645S3S | Onsemi | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,200 |
| IRFP254A | Fairchild Semi | Power Field-Effect Transistor, 25A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,200 |
| NTD5802NT4G | Onsemi | Power Field-Effect Transistor, 16.4A I(D), 40V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,200 |
| RFD3055LESM9A | Onsemi | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,193 |
| MMDF3N03HDR2 | Onsemi | Power Field-Effect Transistor, 4.1A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,185 |
| NDS9933 | National | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.11ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,180 |
| SI9407AEY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,180 |
| IRFU420APBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,175 |
| STD5NM60-1 | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,175 |
| SI9948AEY | Siliconix | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.17ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,165 |
| BUZ32H | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,150 |
| IRFP244PBF | Vishay | Power Field-Effect Transistor, 15A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,150 |
| IRF730 | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,149 |
| MDD2N60RH | Magnachip | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,148 |
| BUZ73 | Infineon | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,140 |
| SI4840DY-T1 | Vishay | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,140 |
| IRF7201TR | IR-HiRel | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,135 |
| IRFR420TR | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,135 |
| FDZ206P | Fairchild Semi | Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,130 |
| IRF7413 | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,127 |
| MMDF2C02HDR2 | Motorola | Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,104 |
| AUIRFR3607 | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,100 |
| AUIRLR3114Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,100 |
| HAT2164H | Renesas | Power Field-Effect Transistor, 60A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,100 |
| IRFB812PBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,100 |
| STS15N4LLF3 | ST Micro | Power Field-Effect Transistor, 15A I(D), 40V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,095 |
| MDD3N50GRH | Magnachip | Power Field-Effect Transistor | 2,094 |
| IRF620 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,093 |
| NTD3055-094T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,080 |
| AUIRFS8407-7TRL | IR | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,075 |
| IRFR15N20DPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,075 |
| BF998RAW | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,070 |
| RFD16N05 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,070 |
| FDC637BNZ | Onsemi | Power Field-Effect Transistor, 6.2A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,060 |
| IRF7220-TRPBF | IR | Power Field-Effect Transistor, 14A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,055 |
| MTD4N20T4 | Motorola | Power Field-Effect Transistor, 4A I(D), 200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,055 |
| SQD19P06-60L_GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,055 |
| STB11NK50ZT4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,054 |
| IRL3714PBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,050 |
| STW8NK80Z | ST Micro | Power Field-Effect Transistor, 6.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 2,040 |
| IRF5210S | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,025 |
| SISA40DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 162A I(D), 20V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,025 |
| BTS247ZE-3062A | Infineon | Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,020 |
| FDMS2672 | Fairchild Semi | Power Field-Effect Transistor, 3.7A I(D), 200V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,002 |
| AOT480L | Alpha Omega | Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| BSP89E6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| BUK95180-100A | Nexperia | Power Field-Effect Transistor, 11A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| BUZ111SE3045 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,000 |
| FDPF16N50T | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FDPF5N50T | Onsemi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FDPF5N60NZ | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FQPF7N10 | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| IPA032N06N3G | Infineon | Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IPB160N04S4-H1 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IPB160N04S4L-H1 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IPB180P04P4L-02 | Infineon | Power Field-Effect Transistor, 180A I(D), 40V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IRF614PBF | Vishay | Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRF630FP | ST Micro | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRFBF20PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRFH5303TR2PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| IRFR310TRPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR3518TRPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR3711TRPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR420ATF | Fairchild Semi | Power Field-Effect Transistor, 2.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| IRFR430ATR | IR | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR430ATRPBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLR3103TRPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLR8259TRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLU024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,000 |
| PHP30NQ15T | Nexperia | Power Field-Effect Transistor, 29A I(D), 150V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| RF1S70N06 | Fairchild Semi | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,000 |
| SI7818DN-T1-E3 | Vishay | Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| SIHF30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| SIHFR9020TR-GE3 | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SPD28N05L | Infineon | Power Field-Effect Transistor, 28A I(D), 55V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| SPP80N03S2L-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| SQD25N06-22L_GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SQD25N15-52_GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 150V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SQD40061EL_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| STF10N60DM2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STF12N50M2 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STF12NM50ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF16N65M2 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF18NM60N | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF28NM50N | ST Micro | Power Field-Effect Transistor, 21A I(D), 500V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF2N80K5 | ST Micro | Power Field-Effect Transistor, 2A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF5N105K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STF5N65M6 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STF7N52DK3 | ST Micro | Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STFU9N65M2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STH6N95K5-2 | ST Micro | Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| STI18N60M2 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| STI6N62K3 | ST Micro | Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,000 |
| STP10NK60Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP11N65M2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STP12N50M2 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STP16NS25 | ST Micro | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP5NK60Z | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP7N52K3 | ST Micro | Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STQ1NK60ZR-AP | ST Micro | Power Field-Effect Transistor, 0.3A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2,000 |
| SUD23N06-31-GE3 | Vishay | Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SUM110P04-05-E3 | Vishay | Power Field-Effect Transistor, 39A I(D), 40V, 0.005ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,000 |
| TK11P65W | Toshiba | Power Field-Effect Transistor, 11.1A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| FCD380N60E | Onsemi | Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,998 |
| BSP89L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,995 |
| STP2N60 | ST Micro | Power Field-Effect Transistor, 2.9A I(D), 600V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,995 |
| BUK482-100A | NXP | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,993 |
| STS7NF60L | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 60V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,990 |
| SUB40N06-25L | Vishay | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,990 |
| BSP295E6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,985 |
| IPB70N10S3L12ATMA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,985 |
| IRL520NSTRLPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,983 |
| IRF5801TRPBF | Infineon | Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA | 1,980 |
| STP5N105K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,980 |
| FDMS86255 | Onsemi | Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 1,977 |
| HUF75307D3S | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,975 |
| IRFU9120PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,975 |
| FDB3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,967 |
| AUIRFR1018E | Infineon | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,950 |
| IRFB61N15DPBF | Infineon | Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,950 |
| IRFP22N60KPBF | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,950 |
| IRFR9N20D | Infineon | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,950 |
| STD35NF3LLT4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 30V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,945 |
| IRFR024NTR | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,935 |
| 2SJ130L-E | Renesas | Power Field-Effect Transistor, 1A I(D), 300V, 8.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,932 |
| MDD3N40RH | Magnachip | Power Field-Effect Transistor | 1,929 |
| SISS27DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 30V, 0.0056ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,918 |
| RFP22N10 | Fairchild Semi | Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,915 |
| NTGS3433T1G | Onsemi | Power Field-Effect Transistor, 2.35A I(D), 12V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,905 |
| AUIRF3808S | Infineon | Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,900 |
| BTS115A | Infineon | Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| FQP2N80 | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| FQPF13N06L | Onsemi | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,900 |
| IRLIZ14GPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHF30N60E-E3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHP6N40D-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHP8N50D-GE3 | Vishay | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| STB100N6F7 | ST Micro | Power Field-Effect Transistor, 100A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,900 |
| STP11NB40 | ST Micro | Power Field-Effect Transistor, 10.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| STP15NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| IRLU8726PBF | IR | Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,885 |
| RJK0654DPB-00-J5 | Renesas | Power Field-Effect Transistor, 30A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,885 |
| NTD3055L104T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,880 |
| SPD10N10 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,870 |
| BUZ101S | Infineon | Power Field-Effect Transistor, 22A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,866 |
| IRF3205ZSTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,865 |
| BSP603S2L | Infineon | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,860 |
| HUF75617D3ST | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,860 |
| HUFA75321S3ST | Fairchild Semi | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,860 |
| IRFR3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,860 |
| NTHS2101PT1G | Onsemi | Power Field-Effect Transistor, 5.4A I(D), 8V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,855 |
| SI4559ADY-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,855 |
| AUIRF1405ZS | Infineon | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,850 |
| IPD09N03LAG | Infineon | Power Field-Effect Transistor, 50A I(D), 25V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,850 |
| STF13N60M2 | ST Micro | Power Field-Effect Transistor | 1,850 |
| IRLR120NTRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,849 |
| BSP170P | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,835 |
| SQ2301ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 3.9A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,835 |
| SQS840EN-T1_GE3 | Vishay | Power Field-Effect Transistor | 1,835 |
| FDS6984S | Fairchild Semi | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,830 |
| IRFH5215TRPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,815 |
| AON6246 | Alpha Omega | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,810 |
| IRFR120NTRPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,810 |
| SUD50N03-07 | Siliconix | Power Field-Effect Transistor, 20A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,810 |
| IRLMS6702TRPBF | Infineon | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,808 |
| AUIRFS3006 | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,800 |
| IRF830ASPBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,800 |
| STF4N62K3 | ST Micro | Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,800 |
| IRF7452PBF | Infineon | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,790 |
| BSP316E6327 | Infineon | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,780 |
| ZVN4424GTA | Diodes | Power Field-Effect Transistor, 0.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,778 |
| IRFR13N20DTRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,770 |
| NTD2955 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,765 |
| STP14NF10 | ST Micro | Power Field-Effect Transistor, 15A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,761 |
| AO4822A | Alpha Omega | Power Field-Effect Transistor, 8A I(D), N-Channel, Metal-oxide Semiconductor FET | 1,760 |
| IRF7811WTR | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,755 |
| FDMS039N08B | Onsemi | Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 1,750 |
| STF10N105K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,750 |
| IRFR1N60APBF | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,749 |
| SI7684DP-T1-E3 | Vishay | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,744 |
| BUK657-400B | NXP | Power Field-Effect Transistor, 11A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,740 |
| FQP4N90C | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,733 |
| AUIRFR2405 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,725 |
| TK4A60DA | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,722 |
| IRFS4321PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,720 |
| IRLML2244TRPBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,720 |
| IRFR1205TRPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,715 |
| IRLR220ATF | Fairchild Semi | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,715 |
| NVMYS5D3N04CTWG | Onsemi | Power Field-Effect Transistor, 71A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,710 |
| AUIRF1010EZS | Infineon | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,700 |
| BUZ71L | Siemens | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,700 |
| HS8K11 | Rohm | Power Field-Effect Transistor | 1,700 |
| IRFI9Z34GPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,700 |
| SP8K1TB | Rohm | Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,700 |
| BUK9880-55A | NXP | Power Field-Effect Transistor, 7A I(D), 55V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,690 |
| IPD50P04P4L-11 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,690 |
| IXTA32N20T | IXYS | Power Field-Effect Transistor, 32A I(D), 200V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,690 |
| NDS9945 | Onsemi | Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,690 |
| VN2450N8-G | Supertex | Power Field-Effect Transistor, 0.25A I(D), 500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 1,690 |
| SI4966DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,685 |
| IRF3711SPBF | IR | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,683 |
| SPB80N06S2L-11 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,677 |
| DMP3130L-7 | Diodes | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,670 |
| IRFL214TRPBF | Vishay | Power Field-Effect Transistor | 1,670 |
| STB23NM60ND | ST Micro | Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,660 |
| PSMN018-80YS | Nexperia | Power Field-Effect Transistor, 45A I(D), 80V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 1,655 |
| 2SK1602 | Toshiba | Power Field-Effect Transistor, 2.8A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| AUIRFU8405 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,650 |
| IRF630SPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| IRFI9530G | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| IRFI9634G | Vishay | Power Field-Effect Transistor, 4.1A I(D), 250V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| IRFS634B | Fairchild Semi | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| IRFS7730TRLPBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,650 |
| STP20N20 | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| RJK0454DPB-00-J5 | Renesas | Power Field-Effect Transistor, 40A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,630 |
| STD1NA60 | ST Micro | Power Field-Effect Transistor, 1.6A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,629 |
| IRFR9024N | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,628 |
| BUK92150-55A | Nexperia | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,625 |
| IRFU110 | Fairchild Semi | Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,625 |
| IRFU3303PBF | IR | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,625 |
| MTD9N10ET4 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,625 |
| IPD053N06N3G | Infineon | Power Field-Effect Transistor, 90A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,615 |
| IRFR4105PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,602 |
| AUIRFS3207Z | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| BTS115 | Siemens | Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| FDD6685 | Onsemi | Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| IRF510STRLPBF | Siliconix | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| IRF9530NSTRLPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFB9N65APBF | Vishay | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| IRFBC40STRLPBF | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH5301TR2PBF | IR | Power Field-Effect Transistor, 35A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH5304TR2PBF | IR | Power Field-Effect Transistor, 22A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH7110TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH7914TR2PBF | IR | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,600 |
| IRFH8330TR2PBF | IR | Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH8334TR2PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFHM830TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRL3705ZSTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| IRLZ44ZSTRRPBF | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| MDD5N50RH | Magnachip | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| NP36P04KDG-E1-AY | Renesas | Power Field-Effect Transistor, 36A I(D), 40V, 0.0235ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| SPD30N06S2L-13 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| STP3NK60Z | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| SUM50P10-42-E3 | Vishay | Power Field-Effect Transistor, 36A I(D), 100V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| 2SJ244JYTL | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,591 |
| 2SK2666 | Shindengen | Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,581 |
| BUK7610-100B | Nexperia | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,580 |
| IRFR210PBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,575 |
| IRFR9120PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,575 |
| NDD05N50Z-1G | Onsemi | Power Field-Effect Transistor, 4.7A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,575 |
| BUK9620-55A | Nexperia | Power Field-Effect Transistor, 54A I(D), 55V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,570 |
| IRF7201PBF | Infineon | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,570 |
| IRF7307TRPBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,558 |
| DMTH4011SPD-13 | Diodes | Power Field-Effect Transistor, 42A I(D), 40V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,555 |
| BUK7614-55 | NXP | Power Field-Effect Transistor, 68A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,550 |
| IRFR9020 | Samsung | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,550 |
| MDD5N40RH | Magnachip | Power Field-Effect Transistor | 1,547 |
| BUK9875-100A | Nexperia | Power Field-Effect Transistor, 7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,545 |
| IRF3205STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,539 |
| IRLL3303TR | IR-HiRel | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 1,535 |
| FDD8444 | Onsemi | Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,530 |
| SI7846DP-T1 | Vishay | Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,530 |
| BSP297H6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,520 |
| IRF7456PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,510 |
| HUF76609D3 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,500 |
| IRF3708SPBF | IR | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,500 |
| IRF510SPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,500 |
| IRFR3704ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,500 |
| PSMN1R7-30YL | Nexperia | Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 1,500 |
| SIHG30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,500 |
| SIHP25N40D-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| STFI15N60M2-EP | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.378ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281 | 1,500 |
| STP8N80K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| STU7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,500 |
| TK40E06N1 | Toshiba | Power Field-Effect Transistor, 60A I(D), 60V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| BTS131E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 1,490 |
| SUD50P04-15-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,490 |
| 2N6764 | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | 1,485 |
| IRFR2905ZTR | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,485 |
| IRLR3715ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,484 |
| AUIRFR2307Z | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,475 |
| HUF76409D3ST | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,475 |
| AUIRF7313Q | IR | Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 1,470 |
| IRF4905STRLPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,470 |
| IPB107N20N3G | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,465 |
| AUIRLU2905 | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| BUK453-60A | NXP | Power Field-Effect Transistor, 22A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| FDP6030BL | Onsemi | Power Field-Effect Transistor, 40A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| FQD13N10TM | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,450 |
| FQPF630 | Onsemi | Power Field-Effect Transistor, 6.3A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| IRF530SPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| IRF9610SPBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| IRFIZ34GPBF | Vishay | Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| IRFP048PBF | Vishay | Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,450 |
| STP65NF06 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| BUZ102SLE3045A | Infineon | Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,445 |
| IRLR3410 | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,427 |
| HUF76107D3ST | Harris | Power Field-Effect Transistor, 20A I(D), 30V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,425 |
| STU13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,425 |
| SPD08P06P | Infineon | Power Field-Effect Transistor, 8.83A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,416 |
| IRFU210 | Siliconix | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,414 |
| IRFR9110 | IR | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,406 |
| RFD16N03L | Harris | Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,405 |
| IRF9333TRPBF | IR | Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,402 |
| BTS115AE3045 | Infineon | Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,400 |
| HUF75332P3 | Onsemi | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| IRF1503SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| IRFI820GPBF | Vishay | Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| RFP45N06 | Fairchild Semi | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| SIHB22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| SIHP22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| STB32N65M5 | ST Micro | Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| FDC6036P | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 20V, 0.044ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,395 |
| IRFR024NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,380 |
| FQP45N15V2 | Onsemi | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,375 |
| SI7601DN-T1-GE3 | Siliconix | Power Field-Effect Transistor, 11.5A I(D), 20V, 0.0192ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,372 |
| IRLMS6802TRPBF | Infineon | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,365 |
| SIR872DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,365 |
| STB18NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,360 |
| BSP317E6327 | Infineon | Power Field-Effect Transistor, 0.37A I(D), 200V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,355 |
| AUIRFR120Z | Infineon | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| AUIRFS4010-7P | Infineon | Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,350 |
| IRF1405ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,350 |
| IRFR320PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| IRLR024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| NTD85N02R | Onsemi | Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,350 |
| STD4NB40 | ST Micro | Power Field-Effect Transistor, 4A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| IRF3709SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,340 |
| IRLML6346TRPBF | Infineon | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,340 |
| SMD30N03-30L | Siliconix | Power Field-Effect Transistor, 6A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,335 |
| IRF7304QPBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,330 |
| IRF7421D1PBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,330 |
| FQB5N50CTM | Onsemi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,325 |
| NTD20P06LT4G | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,320 |
| SPD13N05L | Infineon | Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,315 |
| BUK7508-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,312 |
| STD3NK90ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,304 |
| 2SK3758 | Toshiba | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,300 |
| SMP25N05-45L | Siliconix | Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,300 |
| DMG4468LK3-13 | Diodes | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,290 |
| BSP129L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,285 |
| IRF7421D1TRPBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,285 |
| BST78 | NXP | Power Field-Effect Transistor, 0.75A I(D), 450V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-126 | 1,283 |
| BSP315PH6327 | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,280 |
| STD7NB20T4 | ST Micro | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,279 |
| AUIRFR48Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,275 |
| HUF75829D3S | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,275 |
| IRF6645TR1PBF | IR | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,275 |
| IRLU3717PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,275 |
| IPP80CN10NG | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,266 |
| FQU20N06LTU | Onsemi | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,260 |
| NDS9956A | Fairchild Semi | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,255 |
| IRFZ44V | Infineon | Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,250 |
| MTD3055VL | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,250 |
| 2SK3760 | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,245 |
| BSZ019N03LS | Infineon | Power Field-Effect Transistor, 22A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,245 |
| IRF2903ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,244 |
| BUK9535-55 | NXP | Power Field-Effect Transistor, 34A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,243 |
| SPB20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,241 |
| IRF644S | IR | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,240 |
| STW14NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,240 |
| BUZ10L | Siemens | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,238 |
| IRFS4115TRLPBF | Infineon | Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,235 |
| BUZ71 | Infineon | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,228 |
| SUD45P03-10-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,227 |
| IRFP448PBF | IR | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,225 |
| IRFR2407TRPBF | IR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,223 |
| STP9NK90Z | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,223 |
| SIR401DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 20V, 0.0032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,220 |
| IRFB7446PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,219 |
| IRF8513PBF | IR | Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,215 |
| SUD50N06-07L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,215 |
| BSP125L6433 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,210 |
| IRF7805APBF | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,210 |
| BSC057N08NS3GATMA1 | Infineon | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,205 |
| BTS121A | Infineon | Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,202 |
| AOD4126 | Alpha Omega | Power Field-Effect Transistor, 43A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,200 |
| AUIRFR5505 | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,200 |
| BSP317PH6327 | Infineon | Power Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRFH5255TR2PBF | IR | Power Field-Effect Transistor, 15A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRFR9210PBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,200 |
| IRFU3707ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,200 |
| IRFZ44RPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,200 |
| IRLH5030TR2PBF | IR | Power Field-Effect Transistor, 13A I(D), 100V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRLH6224TR2PBF | IR | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,200 |
| RFP30N06LE | Intersil | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,200 |
| SUD23N06-31L-E3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,200 |
| 2SK4018 | Toshiba | Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,198 |
| IRLU8113PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,198 |
| IRF7404 | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,190 |
| MTB50N06VLT4 | Onsemi | Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,180 |
| DMS3015SSS-13 | Diodes | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,175 |
| IPB026N06N | Infineon | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,164 |
| IRF9Z34NLPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,150 |
| RFP8N20L | Harris | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,150 |
| SI7465DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,150 |
| SPD02N50C3 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,150 |
| ZXMP6A17E6TA | Diodes | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,150 |
| IRLZ44ZPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,149 |
| STP6NB50 | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,148 |
| NTD2955T4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,147 |
| IRF7470PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,140 |
| IRF8707GPBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,140 |
| IRF7204TR | IR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,130 |
| AUIRFR4105Z | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,125 |
| HUFA75309D3S | Fairchild Semi | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,125 |
| IRLU8729PBF | IR | Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,125 |
| STD4NK60Z-1 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,125 |
| NTMFS5C646NLT1G | Onsemi | Power Field-Effect Transistor, 93A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,120 |
| BUZ311 | Infineon | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 1,115 |
| C3M0160120J | Wolfspeed | Power Field-Effect Transistor, 17A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263 | 1,113 |
| SPD31N05 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,110 |
| IRF7402PBF | IR | Power Field-Effect Transistor, 6.8A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,105 |
| STP35NF10 | ST Micro | Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,100 |
| TK7P60W | Toshiba | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,100 |
| ZXMN10A08E6TC | Zetex | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,100 |
| STL130N8F7 | ST Micro | Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,085 |
| IRFB4615PBF | Infineon | Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,081 |
| STW18N60M2 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,080 |
| IRF7341TRPBF | Infineon | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,065 |
| AUIRLS3034 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,060 |
| IRF7401PBF | Infineon | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,059 |
| DMP2305U-7 | Diodes | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,055 |
| AUIRF1010ZS | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,050 |
| AUIRF1404Z | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| AUIRFZ44ZS | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,050 |
| IRF4104PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| IRFR825PBF | Infineon | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,050 |
| IRFU1205PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,050 |
| IRFU3504ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,050 |
| NP20P06SLG-E1-AY | Renesas | Power Field-Effect Transistor, 20A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,050 |
| RFD3055LESM | Fairchild Semi | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,050 |
| STP60NE06L-16 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| STU1HN60K3 | ST Micro | Power Field-Effect Transistor | 1,050 |
| IRLZ34NSTRL | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,045 |
| BUZ72 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,040 |
| ZVN4310GTA | Diodes | Power Field-Effect Transistor, 1.67A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,036 |
| RFD14N05LSM | Onsemi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,028 |
| FQPF18N50V2 | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,025 |
| BTS244Z | Infineon | Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,022 |
| MTD2N50E | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,021 |
| IPC70N04S5L4R2ATMA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 40V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,020 |
| IPB038N12N3G | Infineon | Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| IRF9Z34SPBF | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| STB14NM50N | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| PHW14N50E | NXP | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,015 |
| STW24N60DM2 | ST Micro | Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,014 |
| FQP6N40C | Onsemi | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,010 |
| BUK7K6R2-40E | Nexperia | Power Field-Effect Transistor, 40A I(D), 40V, 0.0058ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,009 |
| BUZ331 | Infineon | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 1,005 |
| 2SK1365(F) | Toshiba | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| 2SK1647STR-E | Renesas | Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| 2SK3563 | Toshiba | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| 2SK3569 | Toshiba | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| AON7458 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT12N60 | Alpha Omega | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT13N50 | Alpha Omega | Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT20N25L | Alpha Omega | Power Field-Effect Transistor, 20A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT284L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT298L | Alpha Omega | Power Field-Effect Transistor, 58A I(D), 100V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT3N100 | Alpha Omega | Power Field-Effect Transistor, 2.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT7N70 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOTF10N65 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOTF11N60L | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF25S65 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF2916L | Alpha Omega | Power Field-Effect Transistor, 17A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF9N70 | Alpha Omega | Power Field-Effect Transistor, 9A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOW11S60 | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOW14N50 | Alpha Omega | Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOW7S60 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| AUIRF7207Q | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,000 |
| BSP170PL6327 | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BSP171E6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BSP296NH6327 | Infineon | Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUK483-60A | NXP | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUZ100SE3045A | Infineon | Power Field-Effect Transistor, 77A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| BUZ41A | NJ Semi | Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUZ77B | Infineon | Power Field-Effect Transistor, 2.9A I(D), 600V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FCPF13N60NT | Onsemi | Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FCPF600N60Z | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| FDPF10N50UT | Onsemi | Power Field-Effect Transistor, 8A I(D), 500V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FDPF15N65 | Onsemi | Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FDPF390N15A | Onsemi | Power Field-Effect Transistor, 15A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| IPB60R190C6 | Infineon | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IPB80N08S2-07 | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IRF644SPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IRF6610TR1PBF | IR | Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6665TR1PBF | IR | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6709S2TR1PBF | IR | Power Field-Effect Transistor, 12A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6712STR1PBF | IR | Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6713STR1PBF | IR | Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6714MTR1PBF | IR | Power Field-Effect Transistor, 166A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6717MTR1PBF | Infineon | Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6721STR1PBF | IR | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6728MTR1PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6775MTR1PBF | Infineon | Power Field-Effect Transistor | 1,000 |
| IRF6795MTR1PBF | Infineon | Power Field-Effect Transistor, 32A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6810STR1PBF | IR | Power Field-Effect Transistor, 16A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6811STR1PBF | IR | Power Field-Effect Transistor, 19A I(D), 25V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6893MTR1PBF | IR | Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6894MTR1PBF | IR | Power Field-Effect Transistor, 33A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8302MTR1PBF | IR | Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8304MTR1PBF | IR | Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8306MTR1PBF | IR | Power Field-Effect Transistor | 1,000 |
| IRF8308MTR1PBF | IR | Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRFB13N50APBF | Siliconix | Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| IRFP150MPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,000 |
| IRFS730B | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| RFP12P08 | Intersil | Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SFP9634 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA2N80E-GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 800V, 2.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA30N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHB22N60AE-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHB22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHB30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHF12N60E-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHF15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHF22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP14N60E-GE3 | Vishay | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP15N65E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIS110DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.2A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| SPB03N60S5E3045 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SPB08P06P | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB12NK80ZT4 | ST Micro | Power Field-Effect Transistor, 10.5A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STB14NK60ZT4 | ST Micro | Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STB18N60M6 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB | 1,000 |
| STB33N60DM6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB36N60M6 | ST Micro | Power Field-Effect Transistor, 30A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB6N60M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STB70NF3LLT4 | ST Micro | Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB95N4F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| STB9NK50ZT4 | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STF100N10F7 | ST Micro | Power Field-Effect Transistor, 32A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF10N62K3 | ST Micro | Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF10N80K5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| STF110N10F7 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF11NM50N | ST Micro | Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF13N60DM2 | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF15NM65N | ST Micro | Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF18N60DM2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF20N65M5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF22NM60N | ST Micro | Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF24N60M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF28NM60ND | ST Micro | Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF38N65M5 | ST Micro | Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF45N10F7 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF4N90K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 900V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF6N62K3 | ST Micro | Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF6N90K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STFU10N80K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STFU16N65M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STI20N65M5 | ST Micro | Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| STI24NM60N | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| STI6N90K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP10LN80K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP18N60DM2 | ST Micro | Power Field-Effect Transistor, 12A I(D), 600V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP18NM60N | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP200NF03 | ST Micro | Power Field-Effect Transistor, 120A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP24N65M2 | ST Micro | Power Field-Effect Transistor, 16A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP4N90K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP6N60M2 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP6N65M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP9N80K5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP9NK70Z | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SUA70060E-E3 | Vishay | Power Field-Effect Transistor | 1,000 |
| SUD19P06-60-GE3 | Vishay | Power Field-Effect Transistor, 18.3A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,000 |
| SUM85N15-19-E3 | Vishay | Power Field-Effect Transistor, 85A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SUP10250E-GE3 | Vishay | Power Field-Effect Transistor, 63A I(D), 250V, 0.0325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| ZXMN6A11GTA | Diodes | Power Field-Effect Transistor, 4.4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| AON7210 | Alpha Omega | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 999 |
| IRF2807STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 998 |
| 2SJ314-01S | Fuji Elec | Power Field-Effect Transistor, 5A I(D), 60V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 995 |
| STB22N60M6 | ST Micro | Power Field-Effect Transistor | 991 |
| 2SK1930 | Toshiba | Power Field-Effect Transistor, 4A I(D), 1000V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| BSP320SH6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| IRF1404ZSPBF | Infineon | Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 990 |
| SI7882DP-T1-E3 | Vishay | Power Field-Effect Transistor, 13A I(D), 12V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| STW19NM50N | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 990 |
| ZXMP7A17GTA | Diodes | Power Field-Effect Transistor, 3.7A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 990 |
| IRFR2407 | IR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 985 |
| IRLR3110ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 985 |
| NDS9435 | National | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 985 |
| ZXMP10A17GTA | Diodes | Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 983 |
| BSP105 | NXP | Power Field-Effect Transistor, 0.5A I(D), 60V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| FDS4470 | Onsemi | Power Field-Effect Transistor, 12.5A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| IPB80R290C3A | Infineon | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 980 |
| IRF7665S2TR1PBF | IR | Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| IRFR3303PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 975 |
| MTD15N06VLT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 975 |
| RFD4N06L | Harris | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 975 |
| IXTN600N04T2 | IXYS | Power Field-Effect Transistor, 600A I(D), 40V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 967 |
| MTP12P10 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 967 |
| IPD90N04S4-03 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 965 |
| SVD2955T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 965 |
| BUZ80 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 964 |
| TPCS8208(TE12L) | Toshiba | Power Field-Effect Transistor, 6A I(D), N-Channel, Metal-oxide Semiconductor FET | 960 |
| ZXMP7A17KTC | Diodes | Power Field-Effect Transistor, 3.8A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 960 |
| PSMNR90-80ASFJ | Nexperia | Power Field-Effect Transistor, 505A I(D), 80V, 0.00122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-359 | 956 |
| AOT2916L | Alpha Omega | Power Field-Effect Transistor, 23A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| BSP171 | Siemens | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| BUK7515-100A | Nexperia | Power Field-Effect Transistor | 950 |
| FDP10N60ZU | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| FDP7030BL | Onsemi | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF520N | IR-HiRel | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF7809AVTR | IR-HiRel | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 950 |
| IRF9Z24SPBF | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| IRFB20N50K | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRFR024 | Siliconix | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 950 |
| IRFS4510PBF | Infineon | Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 950 |
| MTB36N06V | Onsemi | Power Field-Effect Transistor, 32A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| SI4420DYPBF | Infineon | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA | 950 |
| SI4814BDY-E3 | Siliconix | Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| SIHF540S-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 950 |
| SPD18P06P | Infineon | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 950 |
| STF18N60M6 | ST Micro | Power Field-Effect Transistor | 950 |
| STF24N60M6 | ST Micro | Power Field-Effect Transistor | 950 |
| STF35N65DM2 | ST Micro | Power Field-Effect Transistor, 32A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STF3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP45N60DM6 | ST Micro | Power Field-Effect Transistor, 30A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP4NB50FP | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP9NK60ZFP | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP9NM60N | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| TK58A06N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 60V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF7413PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 941 |
| FDD5690 | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 940 |
| IRF8010STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 940 |
| IRFF320 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 940 |
| STB19NF20 | ST Micro | Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 940 |
| FDMC8010 | Onsemi | Power Field-Effect Transistor, 30A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 933 |
| BSP129E6327 | Infineon | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 930 |
| STP13NM60ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 930 |
| STY112N65M5 | ST Micro | Power Field-Effect Transistor, 93A I(D), 650V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 930 |
| FQB47P06TM_AM002 | Fairchild Semi | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 928 |
| IRF7342D2TRPBF | Infineon | Power Field-Effect Transistor, 3.4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 927 |
| ZXMN10A11GTA | Diodes | Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 926 |
| IRFPC50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 925 |
| STS4DNFS30L | ST Micro | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 925 |
| IRFP150A | Samsung | Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 923 |
| SI7617DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 13.9A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 920 |
| STF13NM60ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 920 |
| IRF5305SPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 917 |
| AOT240L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 915 |
| STB10NK60ZT4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 915 |
| BUZ349 | Infineon | Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 913 |
| 2SJ542-E | Renesas | Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 911 |
| IRLR8113PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 910 |
| AUIRFU8403 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 900 |
| IRF5305LPBF | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 900 |
| IRF720PBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFB7540PBF | Infineon | Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFI9634GPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 250V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFIB6N60A | Vishay | Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFR1N60A | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 900 |
| IRFS720B | Fairchild Semi | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 900 |
| IRFS7734PBF | Infineon | Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| IRFU4104PBF | IR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| IRL520NLPBF | IR | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 900 |
| IRLU7821PBF | IR | Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| SIHB15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| SIHB25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| SIHFR1N60A | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 900 |
| SIHG22N50D-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 900 |
| SIHP12N50C-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP5N50D-GE3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STD4NK80Z-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| STF21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STF32NM50N | ST Micro | Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STF8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STFW2N105K5 | ST Micro | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 900 |
| STP34NM60N | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP6N80K5 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 800V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP7NK40ZFP | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP9NK60Z | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRF6644TRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 895 |
| SUD50N06-09L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 895 |
| IRL3303LPBF | IR | Power Field-Effect Transistor, 38A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 890 |
| TPCA8106(TE12L,Q) | Toshiba | Power Field-Effect Transistor | 890 |
| ZXMN7A11GTA | Diodes | Power Field-Effect Transistor, 3.8A I(D), 70V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 886 |
| SUD50N04-8M8P-4GE3 | Vishay | Power Field-Effect Transistor, 14A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 885 |
| ZVN4306GVTA | Diodes | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 881 |
| IRLR110 | IR | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 875 |
| SMD25N05-45L | Siliconix | Power Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 875 |
| TK7P50D(T6RSS-Q) | Toshiba | Power Field-Effect Transistor | 870 |
| ZXMP6A17GTA | Diodes | Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 861 |
| IRFML8244TRPBF | Infineon | Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 860 |
| IRF6715MTRPBF | Infineon | Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 855 |
| AUIRFZ48ZS | Infineon | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 850 |
| FDT457N | Onsemi | Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| FQP5N40 | Fairchild Semi | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| IRFI510GPBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| IRFR220NTRLPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 850 |
| IRL3715ZSPBF | IR | Power Field-Effect Transistor, 50A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| IRL3803SPBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| IRLZ44ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 850 |
| MMF60R290PTH | Magnachip | Power Field-Effect Transistor | 850 |
| STF42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| FQP19N20C | Onsemi | Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 849 |
| IPD30N06S2L-23 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 849 |
| IRF6715MTR1PBF | IR | Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 845 |
| SPB47N10L | Infineon | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 845 |
| HUF76143S3S | Harris | Power Field-Effect Transistor, 75A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 841 |
| STB55NF06T4 | ST Micro | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 840 |
| IRFR3910 | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 839 |
| IRF9321TRPBF | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 835 |
| PSMN025-100D | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 835 |
| STB28N60DM2 | ST Micro | Power Field-Effect Transistor | 830 |
| AUIRLR024Z | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 825 |
| AUIRLU024Z | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRFU120ZPBF | IR | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRFU3704ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRL540NSTRRPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 825 |
| IRLR8203PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 825 |
| SISA96DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 825 |
| STD2NA60 | ST Micro | Power Field-Effect Transistor, 2.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 825 |
| AUIRF7640S2TR | Infineon | Power Field-Effect Transistor, 5.8A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 814 |
| NIF9N05CLT1G | Onsemi | Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 810 |
| 2SK1669 | Renesas | Power Field-Effect Transistor, 30A I(D), 250V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 809 |
| ZVNL120GTA | Diodes | Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 804 |
| 2SK3767(Q) | Toshiba | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AOB280L | Alpha Omega | Power Field-Effect Transistor, 140A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AOB284L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AOT10N60 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AUIRF4104S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| AUIRFS3207ZTRL | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AUIRFS4310ZTRL | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AUIRFZ48Z | Infineon | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| BUK7109-75AIE | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FCB20N60FTM | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FCP9N60N | Onsemi | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| FDB016N04AL7 | Onsemi | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FDB8447L | Onsemi | Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FDP8870 | Onsemi | Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| FQB4N80TM | Onsemi | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB50N06TM | Onsemi | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB58N08TM | Fairchild Semi | Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB6N90TM | Fairchild Semi | Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB7P20TM | Onsemi | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IPA70R450P7S | Infineon | Power Field-Effect Transistor, 700V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| IRC634PBF | Vishay | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF520VSPBF | IR | Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF630STRLPBF | IR | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF634STRRPBF | Vishay | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF644NSTRLPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF644STRRPBF | IR | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF6613TR1PBF | IR | Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF710STRLPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF720SPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF9530STRRPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF9640STRL | Vishay | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRFB31N20D | IR | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| IRFBC30STRLPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFBF30STRLPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRFH5204TR2PBF | IR | Power Field-Effect Transistor, 22A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFH5220TR2PBF | IR | Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFH8318TR2PBF | IR | Power Field-Effect Transistor, 27A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM830DTR2PBF | IR | Power Field-Effect Transistor, 20A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM831TR2PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM8363TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFR224PBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 800 |
| IRFS4010TRL7PP | Infineon | Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| IRFS4321TRL7PP | Infineon | Power Field-Effect Transistor, 86A I(D), 150V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFS7540TRLPBF | Infineon | Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL2910STRLPBF | Infineon | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRL530STRRPBF | Vishay | Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL540SPBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL630STRLPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRLH7134TR2PBF | IR | Power Field-Effect Transistor, 134A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| IRLS3813TRLPBF | Infineon | Power Field-Effect Transistor | 800 |
| IRLZ44STRRPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| MDP15N60GTH | Magnachip | Power Field-Effect Transistor | 800 |
| MTB30P06VT4 | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| PSMN008-75B | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| SGSP367 | ST Micro | Power Field-Effect Transistor, 12A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| SIHB12N60ET5-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM100N04-2M7_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM100N10-10_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM200N04-1M1L_GE3 | Vishay | Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| STF21NM60ND | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| SUM70040E-GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SUM70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| VNB28N04TR-E | ST Micro | Power Field-Effect Transistor, 28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| ZVN0545GTA | Zetex | Power Field-Effect Transistor, 0.14A I(D), 450V, 50ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| 2SK1768 | Toshiba | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 799 |
| BTS100E3045A | Infineon | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 798 |
| NTP6410ANG | Onsemi | Power Field-Effect Transistor, 76A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 798 |
| NDB610A | Fairchild Semi | Power Field-Effect Transistor, 26A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 797 |
| FDB3860 | Fairchild Semi | Power Field-Effect Transistor, 6.4A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 795 |
| PHB66NQ03LT | Nexperia | Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 795 |
| RFD16N05SM | Harris | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 795 |
| STP16N65M2 | ST Micro | Power Field-Effect Transistor | 795 |
| AUIRFS8409TRL | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 790 |
| IXTY01N100 | Littelfuse | Power Field-Effect Transistor, 0.1A I(D), 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 790 |
| IRFU110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 788 |
| PHP6N50E | NXP | Power Field-Effect Transistor, 5.9A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 785 |
| HUF76131SK8 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 784 |
| PHP45N03LT | NXP | Power Field-Effect Transistor, 45A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 782 |
| IRF7832ZPBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 774 |
| SI4965DY-T1 | Vishay | Power Field-Effect Transistor, 8A I(D), 8V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 771 |
| STB6NK90ZT4 | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 770 |
| RFP15N05L | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 50V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 765 |
| IRF7379PBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 760 |
| IRF7902PBF | IR | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0144ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 760 |
| HUF76432S3ST | Fairchild Semi | Power Field-Effect Transistor, 59A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 754 |
| 2SK3759 | Toshiba | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| AUIRFR1010Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 750 |
| AUIRFR540Z | Infineon | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| AUIRFU3607 | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| AUIRFU4292 | Infineon | Power Field-Effect Transistor, 9.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| FCU900N60Z | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| FDMS86200DC | Onsemi | Power Field-Effect Transistor, 9.3A I(D), 150V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 750 |
| FDP070AN06A0 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| FDPF18N50 | Onsemi | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| HUF76419D3S | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 750 |
| IPG20N06S3L-35 | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| IRF3704SPBF | IR | Power Field-Effect Transistor, 75A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| IRFIB8N50K | Vishay | Power Field-Effect Transistor, 6.7A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| IRFIBC40GPBF | Vishay | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| IRLU7843PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| MDF16N50GTH | Magnachip | Power Field-Effect Transistor, 16A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| SIHP10N40D-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| SPU31N05 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| STF35N60DM2 | ST Micro | Power Field-Effect Transistor, 28A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| STF36N60M6 | ST Micro | Power Field-Effect Transistor | 750 |
| STF5NK100Z | ST Micro | Power Field-Effect Transistor | 750 |
| IRFBC40 | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 747 |
| IRFZ24NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 746 |
| BUK564-60H | NXP | Power Field-Effect Transistor, 39A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 745 |
| SI4466DY-T1 | Vishay | Power Field-Effect Transistor, 9.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 745 |
| IRF3315SPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 740 |
| IRF3704ZSPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 20V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 740 |
| IRFR9024NTRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 740 |
| SI4856DY-T1 | Vishay | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 735 |
| IRFBF20SPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 730 |
| BTS282ZE-3180A | Infineon | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 723 |
| BUK454-200A | NXP | Power Field-Effect Transistor, 9.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 723 |
| IRF9Z34NSTRRPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 721 |
| STW21NM60ND | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 720 |
| BSP300L6327 | Infineon | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 716 |
| FDMC86320 | Onsemi | Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 715 |
| BSP17E6327 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 710 |
| IPP100N06S2L-05 | Infineon | Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 706 |
| BSP89H6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 705 |
| ISP12DP06NM | Infineon | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 705 |
| IXFT40N30Q | IXYS | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268 | 702 |
| 2SJ239 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 700 |
| AUIRF2804S-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 700 |
| AUIRFB4610 | Infineon | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| AUIRFS3004-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 700 |
| AUIRL3705Z | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| FDB6021P | Fairchild Semi | Power Field-Effect Transistor, 28A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 700 |
| FQPF13N50C | Onsemi | Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRF3711PBF | Infineon | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRF6802SDTR1PBF | IR | Power Field-Effect Transistor, 57A I(D), N-Channel, Metal-oxide Semiconductor FET | 700 |
| IRF9530N | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRFB23N15DPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRFPC60PBF | Vishay | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 700 |
| IRFZ44R | Siliconix | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRL2703SPBF | IR | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 700 |
| SIHF22N60E-E3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| STF24N65M2 | ST Micro | Power Field-Effect Transistor, 16A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| STP34NM60ND | ST Micro | Power Field-Effect Transistor | 700 |
| IRFP254 | Vishay | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 699 |
| IRF5210STRLPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 695 |
| BSC060N10NS3G | Infineon | Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 693 |
| RFD16N05LSM | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 690 |
| IRF540NPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 686 |
| FQP7P06 | Onsemi | Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 684 |
| IRL3803STRLPBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 680 |
| STY60NM60 | ST Micro | Power Field-Effect Transistor, 60A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 680 |
| AUIRFR3504Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| HUF76407D3S | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| IRFPS43N50KPBF | Vishay | Power Field-Effect Transistor, 47A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 675 |
| IRFR420ATRPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| SPD50N03S2-07 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 675 |
| NTD2955T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 674 |
| AUIRFR3504 | Infineon | Power Field-Effect Transistor, 56A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 670 |
| HUF75332S3ST | Intersil | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 670 |
| IRFS3607PBF | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 670 |
| HUF75329S3ST | Fairchild Semi | Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 667 |
| IRF7404QPBF | IR | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 665 |
| IRF7451PBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA | 665 |
| IRFBA1404PPBF | Infineon | Power Field-Effect Transistor, 95A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA | 661 |
| STWA48N60DM2 | ST Micro | Power Field-Effect Transistor | 660 |
| FDD16AN08A0 | Onsemi | Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 659 |
| SI7949DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 658 |
| BSC240N12NS3G | Infineon | Power Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 655 |
| AUIRFSL8407 | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 650 |
| AUIRL3705ZL | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 650 |
| FQP34N20 | Onsemi | Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| FQPF27N25 | Onsemi | Power Field-Effect Transistor, 14A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| HUF75321P3 | Onsemi | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRF135S203 | Infineon | Power Field-Effect Transistor | 650 |
| IRF9630STRR | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 650 |
| IRFI740GLCPBF | Vishay | Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRFL4105TR | IR-HiRel | Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 650 |
| MDP11N60TH | Magnachip | Power Field-Effect Transistor | 650 |
| MDP1933TH | Magnachip | Power Field-Effect Transistor | 650 |
| MMF60R750PTH | Magnachip | Power Field-Effect Transistor | 650 |
| NTMFD5C466NT1G | Onsemi | Power Field-Effect Transistor, 14A I(D), 40V, 0.0081ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| PSMN004-60B | Nexperia | Power Field-Effect Transistor, 75A I(D), 60V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| SIHB33N60E-E3 | Vishay | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 650 |
| STP11NM60A | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| STP32NM50N | ST Micro | Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| STP80NF55-06FP | ST Micro | Power Field-Effect Transistor, 60A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| SUP85N10-10P-E3 | Vishay | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 650 |
| TK35A08N1 | Toshiba | Power Field-Effect Transistor, 55A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRL510PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 642 |
| BSO301SP | Infineon | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 635 |
| BUZ42 | Infineon | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 635 |
| IRF1310NSTRL | IR | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 620 |
| IRF630NS | Infineon | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 620 |
| IRFB4410ZPBF | IR | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 617 |
| SI5424DC-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 615 |
| ZVP2106GTA | Diodes | Power Field-Effect Transistor, 0.45A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 614 |
| IRF7822TRPBF | IR | Power Field-Effect Transistor, 18A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 610 |
| 2SK4013 | Toshiba | Power Field-Effect Transistor, 6A I(D), 800V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRF1010Z | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| AUIRF1324S-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRF1405 | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| AUIRF3710ZS | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRFR4105 | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 600 |
| AUIRFU4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 600 |
| BSP373E6327 | Siemens | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| FCP190N60 | Onsemi | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| FQPF19N10 | Onsemi | Power Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IPA60R385CP | Infineon | Power Field-Effect Transistor, 9A I(D), 650V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| IRF1324SPBF | IR | Power Field-Effect Transistor, 195A I(D), 24V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRF2903ZPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| IRF3711S | IR-HiRel | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IRFS254B | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IRFS3507PBF | IR | Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRFS7787TRLPBF | Infineon | Power Field-Effect Transistor, 76A I(D), 75V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRFU3910PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 600 |
| MDP10N60GTH | Magnachip | Power Field-Effect Transistor | 600 |
| NDP7060 | Onsemi | Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| NP80N04MHE-S18-AY | Renesas | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| NTD20N06T4G | Onsemi | Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| SIHG22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 600 |
| SIHP17N60D-E3 | Vishay | Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| SIHP7N60E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STD2NB25-1 | ST Micro | Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 600 |
| STF33N60DM6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STP6NK60ZFP | ST Micro | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STW15NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW24N60M6 | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 600 |
| STW25N60M2-EP | ST Micro | Power Field-Effect Transistor | 600 |
| STW27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW40N60M2 | ST Micro | Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW72N60DM2AG | ST Micro | Power Field-Effect Transistor, 66A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STWA20N95K5 | ST Micro | Power Field-Effect Transistor | 600 |
| TK30A06N1 | Toshiba | Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| FDS5672 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 598 |
| IRFU024N | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 596 |
| STW26N60M2 | ST Micro | Power Field-Effect Transistor | 595 |
| IRLR3714PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 592 |
| BSP297E6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| BSP320SL6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| IPD50P03P4L-11 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 590 |
| IRFB4228PBF | Infineon | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 590 |
| IRFH5300TR2PBF | IR | Power Field-Effect Transistor, 40A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| STV40N10 | ST Micro | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 590 |
| IRFR6215TRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 585 |
| IRFS3006TRL7PP | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 585 |
| SPB20N60S5 | Siemens | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 585 |
| STL40N75LF3 | ST Micro | Power Field-Effect Transistor, 40A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 585 |
| IRLR2703PBF | Infineon | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 580 |
| MMDF2C01HDR1 | Motorola | Power Field-Effect Transistor, 2A I(D), 12V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 580 |
| SPU01N60S5 | Infineon | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 580 |
| IRF4905PBF | Infineon | Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 579 |
| 2SK2221 | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 578 |
| IRF3704ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 20V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 575 |
| IRL3803S | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 575 |
| NTB25P06T4G | Onsemi | Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 575 |
| SPN04N60S5 | Infineon | Power Field-Effect Transistor, 0.8A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 575 |
| IRF7311PBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| IRF7313QPBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| IRF7322D1PBF | IR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| STW33N60M6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 570 |
| STWA48N60M2 | ST Micro | Power Field-Effect Transistor | 570 |
| IRF7103TRPBF | Infineon | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 565 |
| IRF7862PBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 565 |
| SI7846DP-T1-E3 | Vishay | Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 565 |
| TN5325K1-G | Microchip | Power Field-Effect Transistor, 0.15A I(D), 250V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 565 |
| AUIRLL024N | IR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 560 |
| STD2NB80T4 | ST Micro | Power Field-Effect Transistor, 1.9A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 560 |
| TN2504N8 | Supertex | Power Field-Effect Transistor, 0.89A I(D), 40V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 555 |
| FQP46N15 | Onsemi | Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRF610SPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 550 |
| IRF7341PBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 550 |
| IRF9540NSPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 550 |
| IRFHM792TR2PBF | IR | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 550 |
| IRFI840GPBF | Vishay | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRFS7437-7PPBF | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 550 |
| STF33N60M2 | ST Micro | Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| STP16N65M5 | ST Micro | Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| STP17NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRF840SPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 549 |
| BSZ068N06NS | Infineon | Power Field-Effect Transistor, 63A I(D), 60V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 545 |
| 2SK2225-80-E#T2 | Renesas | Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 540 |
| HUFA75332S3ST | Fairchild Semi | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 540 |
| IRF7465TRPBF | Infineon | Power Field-Effect Transistor, 1.9A I(D), 150V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 540 |
| STW15NM60ND | ST Micro | Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 540 |
| STW48N60M2-4 | ST Micro | Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 540 |
| TK30E06N1 | Toshiba | Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 540 |
| IRFR3518PBF | Infineon | Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 538 |
| BSP373L6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 535 |
| NTR4501NT1G | Onsemi | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 526 |
| FDS4953 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 525 |
| IRFR4105ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 525 |
| IRFU3505PBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| IRFU4105PBF | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| IRLU7833PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| STU85N3LH5 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 525 |
| IRFR2307ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 524 |
| IRFR5505 | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 522 |
| IRFU9214 | Siliconix | Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 520 |
| AUIRLR2908 | Infineon | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 517 |
| SI4850EY-T1 | Vishay | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 515 |
| SPN03N60S5 | Infineon | Power Field-Effect Transistor, 0.7A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 515 |
| STB16NS25T4 | ST Micro | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 515 |
| NTD3055L104G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 512 |
| RJK1055DPB-00-J5 | Renesas | Power Field-Effect Transistor, 23A I(D), 100V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 512 |
| AUIRFR024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 505 |
| 2SK2649-01R | Fuji Elec | Power Field-Effect Transistor, 9A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| AUIRF3808 | Infineon | Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| AUIRFB3207 | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| AUIRFB8405 | Infineon | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFBA1405 | Infineon | Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFI3205 | Infineon | Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFI4905 | Infineon | Power Field-Effect Transistor, 39A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| AUIRFIZ34N | Infineon | Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFS8403 | Infineon | Power Field-Effect Transistor, 123A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFSL4010 | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| AUIRFSL4310 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| AUIRFZ46NL | Infineon | Power Field-Effect Transistor, 39A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| BTS412A | Siemens | Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| FQPF7N65C | Onsemi | Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPA50R190CE | Infineon | Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPA65R400CE | Infineon | Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPB60R280C6 | Infineon | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IPD220N06L3G | Infineon | Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| IPI80N04S4-03 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| IRF3709ZSPBF | IR | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| IRF624SPBF | Vishay | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRF830PBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFB4610PBF | IR | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFB9N60A | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFI634GPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFI830GPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFIBC20GPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFIBE30G | Vishay | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFPF30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| IRFS7437PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRL2703PBF | Infineon | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRL2703S | IR | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRL510SPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRLR3636TRPBF | IR | Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| IRLZ34 | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRLZ44ZL | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| NP24N06HLB | Renesas | Power Field-Effect Transistor, 24A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB | 500 |
| NVMFS5C450NLWFT1G | Onsemi | Power Field-Effect Transistor, 110A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| PHX18NQ20T | NXP | Power Field-Effect Transistor, 8.2A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| SI4880DY | Siliconix | Power Field-Effect Transistor, 13A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| SIHD5N50D-E3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| SIHF18N50D-E3 | Vishay | Power Field-Effect Transistor, 18A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SIHG15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG17N60D-GE3 | Vishay | Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG25N40D-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG30N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG33N65E-GE3 | Vishay | Power Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG460B-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG47N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG73N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 69A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG73N60E-GE3 | Vishay | Power Field-Effect Transistor, 73A I(D), 600V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHP12N60E-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SPP03N60C3 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SQP100P06-9M3L_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 60V, 0.0093ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STF16N60M2 | ST Micro | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| STF22N60DM6 | ST Micro | Power Field-Effect Transistor | 500 |
| STF8N65M5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STP10NK70ZFP | ST Micro | Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STP16NF06FP | ST Micro | Power Field-Effect Transistor, 11A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP40010EL-GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP50N10-21P-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| TK22A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| TK46A08N1,S4X(S | Toshiba | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| TK6A60W,S4VX | Toshiba | Power Field-Effect Transistor | 500 |
| IPP055N03LG | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 497 |
| IRL540NPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 496 |
| ZXM64P035L3 | Diodes | Power Field-Effect Transistor, 12A I(D), 35V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 496 |
| HUF75531SK8T | Fairchild Semi | Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 495 |
| IRF6725MTR1PBF | Infineon | Power Field-Effect Transistor, 170A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 495 |
| STF12N65M5 | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 495 |
| ZVP0545GTA | Diodes | Power Field-Effect Transistor, 0.075A I(D), 450V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 495 |
| HP4410DY | Harris | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 490 |
| IRF7424PBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 488 |
| IRLU8743PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 485 |
| SPP08P06P | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 485 |
| IPB054N08N3G | Infineon | Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 482 |
| BUK9629-100B | Philips Semi | Power Field-Effect Transistor, 46A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 481 |
| IRF2907ZLPBF | IR | Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 481 |
| FDAF59N30 | Fairchild Semi | Power Field-Effect Transistor, 34A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 480 |
| IRC840 | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 480 |
| STW24NM60N | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| STW6N90K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| TK39N60W | Toshiba | Power Field-Effect Transistor, 38.8A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| AUIRF7316Q | Infineon | Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| BSZ063N04LS6ATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| BUZ307 | Infineon | Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 475 |
| IRF3415S | Infineon | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| IRF7303PBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7319PBF | Infineon | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7905PBF | IR | Power Field-Effect Transistor, 8.9A I(D), 30V, 0.0171ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| IRF9956 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7854PBF | IR | Power Field-Effect Transistor, 10A I(D), 80V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 471 |
| STP23NM50N | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 471 |
| BUZ100SLE3045A | Infineon | Power Field-Effect Transistor, 70A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 470 |
| BUZ32-E3045 | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 470 |
| FDB2552 | Onsemi | Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 470 |
| BUK453-60B | NXP | Power Field-Effect Transistor, 20A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 469 |
| IRF7301PBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 469 |
| BSP88L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 465 |
| BUZ171 | Siemens | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 465 |
| IPB60R385CP | Infineon | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 465 |
| IRF1010NSTRLPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 465 |
| STP28N60M2 | ST Micro | Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 465 |
| IRFR3706PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 463 |
| ZXMN6A25GTA | Diodes | Power Field-Effect Transistor, 4.8A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 463 |
| 2SK1167-E | Renesas | Power Field-Effect Transistor, 15A I(D), 450V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 460 |
| BSP129H6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 455 |
| SI7858ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 12V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 455 |
| AUIRF1010ZL | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 450 |
| AUIRF3710Z | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| AUIRFR8403 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRFS8405 | Infineon | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRFU540Z | Infineon | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRL1404Z | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| AUIRLR2703 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| AUIRLR3915 | Infineon | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRLU3110Z | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 450 |
| BUZ72L | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| FCA36N60NF | Onsemi | Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FDA18N50 | Onsemi | Power Field-Effect Transistor, 19A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FDA20N50F | Onsemi | Power Field-Effect Transistor, 22A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQA40N25 | Onsemi | Power Field-Effect Transistor, 40A I(D), 250V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQA6N70 | Fairchild Semi | Power Field-Effect Transistor, 6.4A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQP5N50C | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRFB11N50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRFBC40SPBF | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| IRFP27N60KPBF | Vishay | Power Field-Effect Transistor, 27A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 450 |
| IRFR3708PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| IRFR4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| IRFS7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| IRFSL4020PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 450 |
| IRFZ34EPBF | IR | Power Field-Effect Transistor, 28A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRL540 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRLD024PBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| IRLZ24PBF | Vishay | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| PSMN005-75P | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| RFP8N18L | Harris | Power Field-Effect Transistor, 8A I(D), 180V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| SCT2H12NZGC11 | Rohm | Power Field-Effect Transistor, 3.7A I(D), 1700V, 1.5ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 450 |
| STD3NM60-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 450 |
| STF10N65K3 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STF21NM50N | ST Micro | Power Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STF26NM60N | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STP36NF06L | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STW7NK90Z | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 450 |
| STY80NM60N | ST Micro | Power Field-Effect Transistor, 80A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| TK7A60W | Toshiba | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| FQP17P10 | Onsemi | Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 447 |
| BUK9624-55 | NXP | Power Field-Effect Transistor, 45A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 446 |
| IRFI540GPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 446 |
| IRFI1010NPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 445 |
| SPD02N60C3 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 445 |
| SI9955DY | Siliconix | Power Field-Effect Transistor, 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 443 |
| BUK445-600B | NXP | Power Field-Effect Transistor, 2.2A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 442 |
| 2SK2220-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| AUIRFR5410 | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 440 |
| IRF7530PBF | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| SI7790DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| STB6NC90ZT4 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| STW45N65M5 | ST Micro | Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 440 |
| IXTH500N04T2 | Littelfuse | Power Field-Effect Transistor, 500A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 438 |
| SUB75P05-08 | Siliconix | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 438 |
| HUF75639P3 | Onsemi | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 433 |
| IXFN64N50P | Littelfuse | Power Field-Effect Transistor, 61A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 431 |
| IRF9540NPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 430 |
| NDT3055L | Onsemi | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| NVMFS5C612NLWFAFT1G | Onsemi | Power Field-Effect Transistor, 250A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| ZVNL110GTA | Diodes | Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| FDS8958A_F085 | Fairchild Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 429 |
| SIHG47N60E-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 425 |
| IRF740PBF | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 422 |
| FDA70N20 | Onsemi | Power Field-Effect Transistor, 70A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 420 |
| HUF76139S3ST | Fairchild Semi | Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 420 |
| NDB505AE | National | Power Field-Effect Transistor, 26A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 415 |
| BUZ341 | Infineon | Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 411 |
| IRF9395MTR1PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.007ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 407 |
| CSD16323Q3 | TI | Power Field-Effect Transistor, 21A I(D), 25V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 406 |
| IRF3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 405 |
| IRFP22N50APBF | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 402 |
| 2SK2173 | Toshiba | Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| AUIRF3805L-7P | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| AUIRLI2505 | Infineon | Power Field-Effect Transistor, 58A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| FCP260N60E | Onsemi | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 400 |
| FDP120N10 | Onsemi | Power Field-Effect Transistor, 74A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| FQPF45N15V2 | Onsemi | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF530 | National | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF7832 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 400 |
| IRF840ASPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRF9630SPBF | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRF9Z30 | Vishay | Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF9Z30PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRFH5004TR2PBF | IR | Power Field-Effect Transistor, 28A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5110TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5215TR2PBF | IR | Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5302DTR2PBF | IR | Power Field-Effect Transistor, 29A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH7107TR2PBF | IR | Power Field-Effect Transistor | 400 |
| IRFH7440TR2PBF | IR | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 400 |
| IRFH8324TR2PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFP2907ZPBF | Infineon | Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFP448 | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFPS40N60KPBF | Vishay | Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFS3307PBF | IR | Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRFS33N15DTRLP | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFSL4321PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 400 |
| IRFZ46ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRFZ48NPBF | IR | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRLHM630TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IXTP3N60P | IXYS | Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| MTP3055VL | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| R6012FNX | Rohm | Power Field-Effect Transistor, 12A I(D), 600V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| R6020FNX | Rohm | Power Field-Effect Transistor, 20A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| SIHB22N60S-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| SIHP22N60S-E3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| SIHS36N50D-E3 | Vishay | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA | 400 |
| STF11NM60ND | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STF13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STF15N65M5 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STP14NM50N | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STP30NF20 | ST Micro | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 400 |
| STW20NK50Z | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| SUP90140E-GE3 | Vishay | Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| TK34A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 75A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF6218STRLPBF | Infineon | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 399 |
| IPB117N20NFDATMA1 | Infineon | Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 398 |
| BUZ103AL | Infineon | Power Field-Effect Transistor, 35A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 396 |
| IRF9Z34NSTRLPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 395 |
| IRFR224TR | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 395 |
| PSMN4R0-30YLD | Nexperia | Power Field-Effect Transistor, 95A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 395 |
| STB75NF20 | ST Micro | Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 395 |
| TK100A06N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 395 |
| SUP75N08-09L-E3 | Siliconix | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 394 |
| IRF540NSPBF | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 393 |
| IRF7811A | IR | Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 390 |
| STW62N65M5 | ST Micro | Power Field-Effect Transistor, 46A I(D), 650V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 390 |
| TK12E60W | Toshiba | Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 390 |
| BSO301SPH | Infineon | Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 388 |
| ZVN4206GTA | Diodes | Power Field-Effect Transistor, 1A I(D), 60V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 388 |
| STB55NF06LT4 | ST Micro | Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 385 |
| STP220N6F7 | ST Micro | Power Field-Effect Transistor | 385 |
| VNP35N07-E | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 383 |
| IRFR120NTR | IR | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 381 |
| BSP89 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 380 |
| FDB075N15A | Onsemi | Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 380 |
| IRF7403PBF | Infineon | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 380 |
| AUIRFR3806 | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| BSC110N15NS5ATMA1 | Infineon | Power Field-Effect Transistor, 76A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 375 |
| BUZ342 | Infineon | Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 375 |
| FDB3652 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 375 |
| IRFR3303 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| IRFR5410 | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| IRFU1010Z | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 375 |
| IRLU3303 | IR | Power Field-Effect Transistor, 35A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 375 |
| NDS8958 | Fairchild Semi | Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 375 |
| IRF7379QPBF | Infineon | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 370 |
| BSP300E6327 | Infineon | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 365 |
| FQB55N10TM | Onsemi | Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 365 |
| MMQ60R190PTH | Magnachip | Power Field-Effect Transistor | 360 |
| STW42N60M2-EP | ST Micro | Power Field-Effect Transistor | 360 |
| SUD15N06-90L-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 360 |
| IRFU9024 | Siliconix | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 358 |
| SQM47N10-24L-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 356 |
| IRFS7434TRL7PP | IR | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 355 |
| 2SK2605 | Toshiba | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| AUIRF1404ZS | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRF3504 | Infineon | Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| AUIRF4104 | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| AUIRFB8407 | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 350 |
| AUIRFZ24NS | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRFZ44VZS | Infineon | Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRFZ48N | Infineon | Power Field-Effect Transistor | 350 |
| AUIRL3705ZS | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRLS3114Z | Infineon | Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 350 |
| BSZ150N10LS3GATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| FDP8896 | Onsemi | Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| FQPF20N06L | Onsemi | Power Field-Effect Transistor, 15.7A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| IRF3305PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRF9Z34PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRFIZ44G | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRFPS37N50APBF | Vishay | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| IRL510 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRLZ24NPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| NTP2955G | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 60V, 0.196ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| RF1S70N06SM | Harris | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| STF26N60DM6 | ST Micro | Power Field-Effect Transistor | 350 |
| STP13NK60ZFP | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP60N05-14 | ST Micro | Power Field-Effect Transistor, 60A I(D), 50V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP60NF06 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP80N10F7 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK14A65W | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK32E12N1 | Toshiba | Power Field-Effect Transistor, 32A I(D), 120V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK5A60W | Toshiba | Power Field-Effect Transistor, 5.4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| SUP75N03-04-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 346 |
| IRF6218PBF | Infineon | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 345 |
| IRFP4410ZPBF | Infineon | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 345 |
| IRFS4615PBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 345 |
| STB35NF10T4 | ST Micro | Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 345 |
| SUB45N03-13L-E3 | Vishay | Power Field-Effect Transistor, 45A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 345 |
| IPB60R055CFD7ATMA1 | Infineon | Power Field-Effect Transistor, 38A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 340 |
| SI4442DY-T1 | Vishay | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 340 |
| SUM50N06-16L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 340 |
| IRF7210 | IR | Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 339 |
| SIHP22N60E-E3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 334 |
| FQP13N06L | Onsemi | Power Field-Effect Transistor, 13.6A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 331 |
| AUIRFS8409-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 330 |
| CSD19538Q3AT | TI | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| IRF3703PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 330 |
| IRFU310PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 330 |
| RJK0305DPB-00-J0 | Renesas | Power Field-Effect Transistor, 30A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| STW13N95K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 330 |
| STY60NM50 | ST Micro | Power Field-Effect Transistor, 60A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| IPP110N20NA | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 328 |
| 2SJ377TE16L | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 325 |
| IRLZ24NSPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 325 |
| IPW60R045CP | Infineon | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 324 |
| IRFB3306GPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 324 |
| STW5NB100 | ST Micro | Power Field-Effect Transistor, 4.3A I(D), 1000V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 323 |
| SUP75N06-08 | Vishay | Power Field-Effect Transistor, 75A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 322 |
| BUZ50A | Infineon | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 320 |
| RFD16N05LSM9A | Harris | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 320 |
| STD2NC60 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 320 |
| IRFPG40PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 319 |
| IXTP3N120 | IXYS | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 311 |
| BSP296L6327 | Infineon | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 310 |
| IRLR6225TRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 310 |
| ZXMS6005DGTA | Diodes | Power Field-Effect Transistor, 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 310 |
| IRL540NS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 308 |
| IPD170N04NG | Infineon | Power Field-Effect Transistor, 30A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 305 |
| IPP80N06S2L-11 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 305 |
| BUZ74A | Infineon | Power Field-Effect Transistor, 2.1A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 302 |
| AUIRF2804WL | Infineon | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 300 |
| AUIRFS4310 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| C3M0021120K | Wolfspeed | Power Field-Effect Transistor, 100A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 300 |
| FDP047AN08A0 | Onsemi | Power Field-Effect Transistor, 80A I(D), 75V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQP45N03L | Fairchild Semi | Power Field-Effect Transistor, 41A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQP65N06 | Onsemi | Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQPF32N20C | Onsemi | Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IPD50N04S4-08 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 300 |
| IPP26CNE8NG | Infineon | Power Field-Effect Transistor, 35A I(D), 85V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IPP60R165CP | Infineon | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRF3007PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRF3415L | IR | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 300 |
| IRF6215S | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRF730SPBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRF9540NSHR | IR | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFB3207ZGPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFH5006TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFI520G | Siliconix | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFIBF20GPBF | Vishay | Power Field-Effect Transistor, 1.2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFP350LCPBF | Vishay | Power Field-Effect Transistor, 18A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 300 |
| IRFS3207PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRFS4229PBF | Infineon | Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFSL7762PBF | Infineon | Power Field-Effect Transistor | 300 |
| IRFZ46ZPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRL3705N | Infineon | Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRL3705ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRL520NS | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRLR7833PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 300 |
| IRLR7843PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 300 |
| MDF3N50 | Magnachip | Power Field-Effect Transistor | 300 |
| NTMFS5C628NLT1G | Onsemi | Power Field-Effect Transistor, 150A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| SFP9530 | Onsemi | Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| SPP06N80C3 | Infineon | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| SPP80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STF9NM60N | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STFW45N65M5 | ST Micro | Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| STP42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STP5NK80ZFP | ST Micro | Power Field-Effect Transistor, 4.3A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| STW56N65DM2 | ST Micro | Power Field-Effect Transistor | 300 |
| STW7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 300 |
| TK20E60W,S1VX | Toshiba | Power Field-Effect Transistor | 300 |
| TK46E08N1 | Toshiba | Power Field-Effect Transistor, 46A I(D), 80V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| TK56A12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFI4024H-117P | IR | Power Field-Effect Transistor, 11A I(D), 55V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 299 |
| SSH70N10A | Fairchild Semi | Power Field-Effect Transistor, 70A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 299 |
| FDB031N08 | Onsemi | Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 298 |
| STW15NA50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 296 |
| NTD5406NT4G | Onsemi | Power Field-Effect Transistor, 12.2A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 294 |
| IRF2805SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 293 |
| IRFU9024PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 293 |
| FDB047N10 | Fairchild Semi | Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 290 |
| IRFB20N50KPBF | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 290 |
| SIR698DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 290 |
| STB30NF10T4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 290 |
| IRF9317PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 289 |
| IRFI540N | Infineon | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 289 |
| AO3422 | Alpha Omega | Power Field-Effect Transistor, 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| AUIRF7319Q | Infineon | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| CSD17577Q3A | TI | Power Field-Effect Transistor, 35A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| IRF7316QPBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| IRF7353D1PBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| IRF7507PBF | Infineon | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| 2SK1859-E | Renesas | Power Field-Effect Transistor, 6A I(D), 900V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 281 |
| BUZ32L3045A | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 280 |
| STW34NM60N | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 280 |
| AUIRFP1405 | Infineon | Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| FDB28N30TM | Onsemi | Power Field-Effect Transistor, 28A I(D), 300V, 0.129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 275 |
| FDP036N10A | Onsemi | Power Field-Effect Transistor, 120A I(D), 100V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 275 |
| IRFP7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| SIHG20N50C-E3 | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| SPB70N10L | Infineon | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 275 |
| SQM50P08-25L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 275 |
| IRFBG30 | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 272 |
| STW21NM50N | ST Micro | Power Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 271 |
| FDA28N50 | Onsemi | Power Field-Effect Transistor, 28A I(D), 500V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 270 |
| IRLL014NTR | IR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 270 |
| IXTH7P50 | IXYS | Power Field-Effect Transistor, 7A I(D), 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 270 |
| STW12NK95Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 270 |
| STW35N65M5 | ST Micro | Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 270 |
| STW48NM60N | ST Micro | Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 270 |
| IRFR9120NPBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 266 |
| IRFS4115-7PPBF | Infineon | Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 266 |
| STB40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 266 |
| STN2NF10 | ST Micro | Power Field-Effect Transistor, 2A I(D), 100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 265 |
| AUIRF9952Q | Infineon | Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 264 |
| IRFS3206TRRPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 264 |
| RFD15P05SM | Harris | Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 264 |
| SPP07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 264 |
| IRFR110 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 263 |
| IRFZ44NPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 263 |
| FQB12P20TM | Fairchild Semi | Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 260 |
| STB80NF55-08T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 260 |
| IRF7832PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 256 |
| ZVN2110GTA | Diodes | Power Field-Effect Transistor, 0.5A I(D), 100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 254 |
| ZXMS6001N3TA | Diodes | Power Field-Effect Transistor, 1.1A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 254 |
| 2SK2733 | Toshiba | Power Field-Effect Transistor, 1A I(D), 900V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| AUIRF1404S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| AUIRF1404ZL | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF1405ZL | Infineon | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF2804 | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| AUIRF2804L | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF2804S | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| AUIRF3007 | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 250 |
| BUZ31 | Infineon | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| CSD25402Q3AT | TI | Power Field-Effect Transistor, -72A I(D), 20V, 0.0159ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| FDMC8321L | Onsemi | Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 250 |
| IPD90N03S4L03ATMA1 | Infineon | Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 250 |
| IRF3708PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRF3805L-7PPBF | IR | Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CA | 250 |
| IRF460 | NJ Semi | Power Field-Effect Transistor, 21A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| IRF9Z34S | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| IRFB7740PBF | Infineon | Power Field-Effect Transistor, 87A I(D), 75V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRFBE20 | Vishay | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRFP150 | Vishay | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 250 |
| IRFSL4615PBF | IR | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| IRL1404PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRL2910LPBF | IR | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| IRL510S | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| IRLZ24 | Vishay | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| MDF18N50BTH | Magnachip | Power Field-Effect Transistor | 250 |
| NTB6411ANG | Onsemi | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| SIHP10N40D-E3 | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| SPW47N60C3 | Infineon | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 250 |
| TK13A50DA | Toshiba | Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| TK15D60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| TK40A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| TK56E12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| TK6A80E | Toshiba | Power Field-Effect Transistor, 6A I(D), 800V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRL640SPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 247 |
| NTF3055-100T1G | Onsemi | Power Field-Effect Transistor | 245 |
| STW43NM60N | ST Micro | Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 243 |
| BUK9518-55 | NXP | Power Field-Effect Transistor, 57A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 242 |
| BSP372L6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 241 |
| 2SK3748-1E | Sanyo Semi | Power Field-Effect Transistor | 240 |
| FCH20N60 | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 240 |
| FQAF11N90 | Fairchild Semi | Power Field-Effect Transistor, 7.2A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 240 |
| SI7450DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 240 |
| BUZ21L | Infineon | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 239 |
| IRF1503PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 239 |
| IRL520NPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 235 |
| IRLR120N | Fairchild Semi | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 235 |
| IRL540PBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 234 |
| IRF7103PBF | Infineon | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 231 |
| IRF2907ZSTRLPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 230 |
| IRFD120PBF | Vishay | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 230 |
| IRFS4410PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 230 |
| BSP319E6327 | Infineon | Power Field-Effect Transistor, 3.8A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 229 |
| IRLU3110ZPBF | Infineon | Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 228 |
| SPP20N60S5 | Infineon | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 227 |
| STHV82FI | ST Micro | Power Field-Effect Transistor, 3.6A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 226 |
| IRFL9014PBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 225 |
| IRFR7446PBF | Infineon | Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 225 |
| IRFU120N | Infineon | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 225 |
| NTD2955-1G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 225 |
| IRF8707TRPBF | IR | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 220 |
| IRFB4710 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 220 |
| IRFU224PBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 220 |
| ZVP2110G | Diodes | Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 220 |
| IRF7202 | IR | Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 218 |
| IPP072N10N3G | Infineon | Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 217 |
| MTB20N20ET4 | Onsemi | Power Field-Effect Transistor, 20A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 217 |
| BUZ111SE3045A | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 215 |
| FQA30N40 | Onsemi | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 215 |
| IRFW640B | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 215 |
| SPD06N60C3 | Infineon | Power Field-Effect Transistor, 6.2A I(D), 650V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 215 |
| STD8N65M5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 215 |
| STD16NE06L | ST Micro | Power Field-Effect Transistor, 16A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 214 |
| FDB070AN06A0 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 213 |
| MTD20N03HDL | Onsemi | Power Field-Effect Transistor, 20A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 210 |
| STW57N65M5 | ST Micro | Power Field-Effect Transistor | 210 |
| IXTA180N10T | Littelfuse | Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 209 |
| MTW32N20E | Onsemi | Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 208 |
| IRF7105 | IR | Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 206 |
| IRFU5410PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 203 |
| IRFZ48STRLPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 203 |
| AUIRF1324 | Infineon | Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF1404 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF2903Z | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF2903ZL | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| AUIRF2903ZS | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRF3205 | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 200 |
| AUIRF3805 | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF3805S | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRFS4310Z | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRFSL3206 | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| AUIRL1404S | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| BSP125E6433 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| FCI7N60 | Onsemi | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| FCP13N60N | Onsemi | Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| FDB082N15A | Onsemi | Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| FDP038AN06A0 | Onsemi | Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| FQPF7N80C | Onsemi | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IPD50N04S4-10 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 200 |
| IRF1405ZS-7P | Infineon | Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRF4104L | IR | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF510A | Fairchild Semi | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRF530NLPBF | IR | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF7307PBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 200 |
| IRF740AL | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF820ASPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRF840ALPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRFD024 | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFI4410ZGPBF | IR | Power Field-Effect Transistor, 43A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRFI634G | Vishay | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRFS38N20DTRLP | Infineon | Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| IRFS41N15DPBF | Infineon | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFS7730PBF | Infineon | Power Field-Effect Transistor | 200 |
| IRFS7762PBF | Infineon | Power Field-Effect Transistor | 200 |
| IRFS9N60APBF | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFZ44NLPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRL530NSPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRLBA3803PPBF | IR | Power Field-Effect Transistor, 179A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| MDP1923TH | Magnachip | Power Field-Effect Transistor | 200 |
| NTP6411ANG | Onsemi | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| PSMN070-200P | Nexperia | Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| RFP10P15 | Harris | Power Field-Effect Transistor, 10A I(D), 150V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| SIHB22N60S-E3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| SIHF9520S | Vishay | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| SIR438DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| SPA12N50C3 | Infineon | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STB9NK50Z | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| STP10N95K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP15N80K5 | ST Micro | Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP160N75F3 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP210N75F6 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP5NK50Z | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP76NF75 | ST Micro | Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP7NK40Z | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK10A80E,S4X | Toshiba | Power Field-Effect Transistor | 200 |
| TK11A65W | Toshiba | Power Field-Effect Transistor, 11.1A I(D), 650V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK14E65W | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK35E08N1 | Toshiba | Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| SIHU5N50D-E3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 199 |
| IRFR3806TRPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 198 |
| MTW26N15E | Motorola | Power Field-Effect Transistor, 26A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 197 |
| BUK455-400B | NXP | Power Field-Effect Transistor, 6.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 196 |
| BUK9608-55 | NXP | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 195 |
| FDMC86340 | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 195 |
| IRF1010S | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 195 |
| IRF540STRR | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 195 |
| IRFR48Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 195 |
| IRFR2407PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 192 |
| IRF7452QPBF | IR | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRF7463 | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 190 |
| IRF7470 | Infineon | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRF9952PBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRFP4568PBF | Infineon | Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 190 |
| IRFB7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 188 |
| HUF76619D3S | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 185 |
| BUZ21 | Infineon | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 182 |
| TK72A12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 182 |
| BUK456-200B | NXP | Power Field-Effect Transistor, 17A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 180 |
| IRFZ44NS | IR | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 180 |
| MTD2955VT4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 180 |
| SSP5N90 | Samsung | Power Field-Effect Transistor, 5A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 180 |
| STW13NK60Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 180 |
| STW15NK90Z | ST Micro | Power Field-Effect Transistor, 15A I(D), 900V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 180 |
| STW35N60DM2 | ST Micro | Power Field-Effect Transistor | 180 |
| TK100A10N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 179 |
| 2SK1329 | Renesas | Power Field-Effect Transistor, 12A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 178 |
| BSP295H6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 175 |
| IRFP21N60LPBF | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 175 |
| IRFU7440PBF | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 175 |
| IRF9610PBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 173 |
| STW3N150 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 172 |
| IRLU024NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 171 |
| 2SK856 | Toshiba | Power Field-Effect Transistor, 45A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 170 |
| AO3414 | Alpha Omega | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 170 |
| STV300NH02L | ST Micro | Power Field-Effect Transistor, 280A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 170 |
| IRF8010SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 169 |
| VNB35N07-E | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 169 |
| IRF540 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 167 |
| IRFR120NPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 167 |
| FDP3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 165 |
| IRF5305PBF | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 161 |
| SK115MAA10 | Semikron | Power Field-Effect Transistor, 95A I(D), 100V, 0.0045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 161 |
| NP110N04PUG-AZ | Renesas | Power Field-Effect Transistor, 110A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 160 |
| SI4967DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 12V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 160 |
| IRFR3410PBF | IR | Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 155 |
| NP110N04PUG | Renesas | Power Field-Effect Transistor, 110A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 155 |
| RFP14N05L | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 155 |
| NVD5C464NT4G | Onsemi | Power Field-Effect Transistor | 154 |
| 2SK2661 | Toshiba | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| AUIRF4905L | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| AUIRFS3004 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| AUIRFS3107 | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| AUIRFZ44V | Infineon | Power Field-Effect Transistor, 55A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 150 |
| AUIRLR014N | Infineon | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 150 |
| AUIRLS3036 | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| CSD18540Q5B | TI | Power Field-Effect Transistor, 28A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FCA20N60 | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FDA38N30 | Onsemi | Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FDH3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 150 |
| FDP050AN06A0 | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| FQP2N60C | Onsemi | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| FQPF70N10 | Onsemi | Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| IPD144N06NG | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IPP05CN10NG | Infineon | Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IPW65R190C7 | Infineon | Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 150 |
| IRF1405LPBF | IR | Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRF520NLPBF | IR | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRF640NPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF740APBF | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF9530PBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF9Z24PBF | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB23N20DPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB3004PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB7746PBF | Infineon | Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIB7N50APBF | Vishay | Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIBF30GPBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIZ48NPBF | Infineon | Power Field-Effect Transistor, 40A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFP260MPBF | Infineon | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| IRFR020 | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IRFS11N50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| IRFSL3107PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRFSL4227PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRL3803LPBF | IR | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRLB3813PBF | Infineon | Power Field-Effect Transistor, 260A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRLR8103VPBF | Infineon | Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IRLZ24NS | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| SCT1000N170 | ST Micro | Power Field-Effect Transistor | 150 |
| STP12NM50 | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP13N95K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP30NF10 | ST Micro | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP4NK60Z | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP4NK80ZFP | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP60NF03L | ST Micro | Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP80NF55-08 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP80NS04Z | ST Micro | Power Field-Effect Transistor, 80A I(D), 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STW20NB50 | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| STW30NM60N | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| STY140NS10 | ST Micro | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| SUP75N08-09L | Siliconix | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| TK17A65W,S5X | Toshiba | Power Field-Effect Transistor | 150 |
| TK17E65W | Toshiba | Power Field-Effect Transistor, 17.3A I(D), 650V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| TK20D60U | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| TK60D08J1 | Toshiba | Power Field-Effect Transistor, 60A I(D), 75V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| 2SK2078 | Toshiba | Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 149 |
| IRFR220NPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 149 |
| BUZ31H | Infineon | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 146 |
| IRF7205 | Infineon | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 146 |
| IRFSL3806PBF | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 146 |
| IRF7807ZPBF | Infineon | Power Field-Effect Transistor | 145 |
| SI4178DY-T1-GE3 | Siliconix | Power Field-Effect Transistor, 12A I(D), 30V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 145 |
| IRF7424TRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 142 |
| IRF7313TRPBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 140 |
| IRFBC20SPBF | Vishay | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 140 |
| 2SK2761-01MR | Fuji Elec | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 139 |
| IRFP22N50A | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 138 |
| BUZ173 | Infineon | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 134 |
| BUZ32 | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 133 |
| AON6454 | Alpha Omega | Power Field-Effect Transistor, 30A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 132 |
| STD30PF03LT4 | ST Micro | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 132 |
| IRF7416PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 130 |
| IRFI9Z24GPBF | Vishay | Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130 |
| IRFS4310ZTRLPBF | IR | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 130 |
| MDP1932TH | Magnachip | Power Field-Effect Transistor | 130 |
| PSMN040-100MSEX | Nexperia | Power Field-Effect Transistor, 30A I(D), 100V, 0.0366ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 130 |
| STP13NK60Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130 |
| BUZ71FI | ST Micro | Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 129 |
| IRF3205S | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 129 |
| IRF7494PBF | IR | Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 129 |
| STP80NF12 | ST Micro | Power Field-Effect Transistor, 80A I(D), 120V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 129 |
| AUIRF3004WL | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 127 |
| AUIRFP2602 | Infineon | Power Field-Effect Transistor, 180A I(D), 24V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 125 |
| IRF3710Z | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 125 |
| IRFR320TRPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 125 |
| IRFU4615PBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 125 |
| AIMZH120R010M1T | Infineon | Power Field-Effect Transistor, 202A I(D), 1200V, 0.0113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 123 |
| IRFB7434PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 123 |
| 2SK2677 | Shindengen | Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 120 |
| FCH041N60E | Onsemi | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | 120 |
| HUF75852G3 | Onsemi | Power Field-Effect Transistor, 75A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 120 |
| IRF7492PBF | IR | Power Field-Effect Transistor, 3.7A I(D), 200V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 120 |
| IRFPC60LCPBF | Vishay | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 120 |
| STW48N60M6-4 | ST Micro | Power Field-Effect Transistor, 39A I(D), 600V, 0.069ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 120 |
| STW52NK25Z | ST Micro | Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 120 |
| IPD65R600E6 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 118 |
| SPD30N08S2L-21 | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 117 |
| BSP149 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 115 |
| IRF9640PBF | Vishay | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 114 |
| IXFN36N60 | Littelfuse | Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 112 |
| MSCSM170AM029CT6LIAG | Microchip | Power Field-Effect Transistor, 676A I(D), 1700V, 0.00375ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 112 |
| BSC190N15NS3GATMA1 | Infineon | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 111 |
| BSP92PH6327 | Infineon | Power Field-Effect Transistor, 0.26A I(D), 250V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 110 |
| IRFR3707ZTRPBF | IR | Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 110 |
| STE88N65M5 | ST Micro | Power Field-Effect Transistor | 110 |
| IRF7317PBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 109 |
| SPP80P06P | Infineon | Power Field-Effect Transistor, 91A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 109 |
| IRFZ34NPBF | Infineon | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 106 |
| TK15A60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 106 |
| IPG20N04S409ATMA1 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0086ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 105 |
| IRF530NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 104 |
| APT5024BVFRG | Microsemi | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 103 |
| SI7852ADP-T1-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 103 |
| SCT055HU65G3AG | ST Micro | Power Field-Effect Transistor | 102 |
| 2SK2056 | Toshiba | Power Field-Effect Transistor, 4A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| 2SK2237 | Toshiba | Power Field-Effect Transistor, 7A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| AUIRF2807 | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| AUIRFS3306 | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| BSC030P03NS3G | Infineon | Power Field-Effect Transistor, 25.4A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BSC035N04LSG | Infineon | Power Field-Effect Transistor, 21A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BSC123N08NS3GATMA1 | Infineon | Power Field-Effect Transistor, 55A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BUZ78 | Infineon | Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| FQP3N60C | Onsemi | Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| FQP85N06 | Onsemi | Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IAUT300N10S5N015ATMA1 | Infineon | Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IPA80R360P7 | Infineon | Power Field-Effect Transistor, 13A I(D), 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPA80R450P7 | Infineon | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPAN70R900P7S | Infineon | Power Field-Effect Transistor, 6A I(D), 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPI80N04S3-H4 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IPP60R099CP | Infineon | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPP60R299CP | Infineon | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPP80N06S2-07 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF3205LPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRF3805LPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRF3805SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRF530N | NXP | Power Field-Effect Transistor, 17A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF530NSPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF530PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF540NSHR | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF740ASPBF | IR | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF820 | Thomson Elec | Power Field-Effect Transistor, 2.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| IRF840B | Fairchild Semi | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF9510SPBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRF9530 | IR | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF9640 | IR | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFB33N15DPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFB4410PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFBC20 | Vishay | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFBF30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFI4019H-117P | Infineon | Power Field-Effect Transistor, 8.7A I(D), 150V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRFI640G | Vishay | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFP140 | Vishay | Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| IRFP140NPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| IRFR5305PBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 100 |
| IRFS11N50A | Siliconix | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRFSL4620PBF | IR | Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRFZ34PBF | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRL3103SPBF | IR | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| PSMN035-150P | Nexperia | Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| SI4490DY | Vishay | Power Field-Effect Transistor, 2.85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| SI4807DY | Siliconix | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| SIHG33N60E-GE3 | Vishay | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| SPP07N60S5 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STB45N60DM2AG | ST Micro | Power Field-Effect Transistor, 34A I(D), 600V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| STP11NK50ZFP | ST Micro | Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STP14NF12 | ST Micro | Power Field-Effect Transistor, 14A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STP3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK100E08N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK10A60W | Toshiba | Power Field-Effect Transistor, 9.7A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK12A60W | Toshiba | Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK12J60U(F) | Toshiba | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| TK8A60W | Toshiba | Power Field-Effect Transistor, 8A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| VNP14N04 | ST Micro | Power Field-Effect Transistor | 100 |
| IRF9620 | Fairchild Semi | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 99 |
| IRFP450PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 99 |
| NP80N04CHE | Renesas | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 99 |
| RS1E350GNTB | Rohm | Power Field-Effect Transistor, 35A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 99 |
| SCH2080KEC | Rohm | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 98 |
| STB170NF04 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 98 |
| SI4410DY | Vishay | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 97 |
| IRFP4368PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 96 |
| SI4806DY | Siliconix | Power Field-Effect Transistor, 7.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 96 |
| AUIRF7416Q | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| CPH6354-TL-W | Onsemi | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 95 |
| FQU9N25TU | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 95 |
| IRF7380QPBF | IR | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| IRF7805QPBF | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| SMP3003-TL-1E | Onsemi | Power Field-Effect Transistor, 100A I(D), 75V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 95 |
| STW55NE10 | ST Micro | Power Field-Effect Transistor, 55A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 95 |
| IRF3805S-7PPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 94 |
| NTMD4N03R2G | Onsemi | Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 93 |
| IRF9956TRPBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 92 |
| IRL640S | Siliconix | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 92 |
| IRF7807PBF | IR | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 91 |
| IRLB4030PBF | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 91 |
| 2SK2221-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 90 |
| 2SK3747-1E | Onsemi | Power Field-Effect Transistor, 2A I(D), 1500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 90 |
| FCH47N60_F133 | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | 90 |
| FDD7N20TM | Onsemi | Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 90 |
| FDP020N06B_F102 | Onsemi | Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| IRFR024N | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 90 |
| IRFS3306PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 90 |
| RJ1L12BGNTLL | Rohm | Power Field-Effect Transistor, 120A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 90 |
| STP20NM50FP | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| STW42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 90 |
| STW58N60DM2AG | ST Micro | Power Field-Effect Transistor | 90 |
| STW70N60DM6-4 | ST Micro | Power Field-Effect Transistor | 90 |
| STW9NK90Z | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 90 |
| TK14A65W5 | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| IPB072N15N3GATMA1 | Infineon | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 89 |
| IRFR4620TRLPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 89 |
| BSC018N04LSG | Infineon | Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 88 |
| IRFB3206PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 88 |
| STP36NF06 | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 88 |
| SISS40DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 87 |
| SPP12N50C3 | Infineon | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 87 |
| IPA65R400CEXKSA1 | Infineon | Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 86 |
| IRF7313PBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 86 |
| SUM110P06-08L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 60V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 85 |
| ZVN3220L | Zetex | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 85 |
| SCT2750NYTB | Rohm | Power Field-Effect Transistor, 5.9A I(D), 1700V, 0.975ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA | 83 |
| IRF7303 | Infineon | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 82 |
| IRF7304PBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 82 |
| BUZ15 | Siemens | Power Field-Effect Transistor, 45A I(D), 50V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 80 |
| BUZ271 | Siemens | Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| HUF75639G3 | Onsemi | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 80 |
| IRF830 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| IRFR9210 | Siliconix | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 80 |
| IRFS4115PBF | Infineon | Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 80 |
| IRFZ44VPBF | Infineon | Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| R6030MNX | Rohm | Power Field-Effect Transistor, 30A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| STW20NM60FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 80 |
| STW56N60DM2 | ST Micro | Power Field-Effect Transistor | 80 |
| IRF7433 | IR | Power Field-Effect Transistor, 8.9A I(D), 12V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 79 |
| IRF7220PBF | IR | Power Field-Effect Transistor, 11A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 78 |
| AUIRFP4004 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 75 |
| AUIRFR2407 | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| AUIRFR2607Z | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| AUIRFR4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| IRFP7530PBF | Infineon | Power Field-Effect Transistor, 281A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 75 |
| IRFR220N | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| IRLU2703PBF | Infineon | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 75 |
| IRLU3105PBF | IR | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 75 |
| TK16J60W | Toshiba | Power Field-Effect Transistor, 15.8A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 75 |
| BUK456-100A | NXP | Power Field-Effect Transistor, 34A I(D), 100V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 74 |
| IRLZ44NSPBF | Infineon | Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 74 |
| IRFB4212PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 100V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 73 |
| BUZ103 | Infineon | Power Field-Effect Transistor, 40A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 72 |
| IRFR5305 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 72 |
| IRF7205PBF | Infineon | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 71 |
| DMP10H400SE-13 | Diodes | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 70 |
| FDMS86300DC | Fairchild Semi | Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 70 |
| IPP030N10N5AKSA1 | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 70 |
| IRF5210PBF | Infineon | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 70 |
| IRF8910 | Infineon | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 70 |
| IRFU4105 | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 70 |
| PSMN4R2-30MLDX | Nexperia | Power Field-Effect Transistor, 70A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 69 |
| IRFR6215PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 68 |
| IRFR13N20D | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 66 |
| MTD15N06VT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 66 |
| CSD25402Q3A | TI | Power Field-Effect Transistor, -72A I(D), 20V, 0.0159ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 65 |
| IRF7907PBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0118ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 65 |
| IRFS3006PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 65 |
| STW4N150 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 65 |
| 2SJ173 | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 64 |
| SUB65P04-15 | Siliconix | Power Field-Effect Transistor, 65A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 63 |
| BSC080P03LSG | Infineon | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 62 |
| NTMFS4927NT1G | Onsemi | Power Field-Effect Transistor | 62 |
| IRFU2905ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 61 |
| STW25NM60N | ST Micro | Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 61 |
| 2SK1317-E | Renesas | Power Field-Effect Transistor, 2.5A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| DMTH43M8LPSQ-13 | Diodes | Power Field-Effect Transistor | 60 |
| FDP025N06 | Onsemi | Power Field-Effect Transistor, 120A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 60 |
| IPG20N04S4L-07 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| IRF510 | Fairchild Semi | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 60 |
| IRF7457 | Infineon | Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 60 |
| IRLR8103V | Infineon | Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 60 |
| IXFH13N50 | IXYS | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 60 |
| STS7PF30L | ST Micro | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| IRF8736 | Infineon | Power Field-Effect Transistor | 58 |
| IRFF310 | Infineon | Power Field-Effect Transistor, 1.25A I(D), 400V, 4.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 57 |
| IRFD9120PBF | Vishay | Power Field-Effect Transistor, 1A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 56 |
| AUIRFS4115 | IR | Power Field-Effect Transistor | 55 |
| IRF9Z34NSPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 55 |
| IRFR1205PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 55 |
| BUZ63 | Infineon | Power Field-Effect Transistor, 5.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 54 |
| IRFPG50 | Vishay | Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 54 |
| NDT456P | Onsemi | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 54 |
| FDB2614 | Onsemi | Power Field-Effect Transistor, 62A I(D), 200V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 52 |
| IRLI530NPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 52 |
| SFH9240 | Fairchild Semi | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 52 |
| VQ1001P | Vishay | Power Field-Effect Transistor, 0.85A I(D), N-Channel, Metal-oxide Semiconductor FET | 52 |
| 2SJ304 | Toshiba | Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| 2SK2382 | Toshiba | Power Field-Effect Transistor, 15A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| 2SK3564 | Toshiba | Power Field-Effect Transistor, 3A I(D), 900V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| AUIRFB4410 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| AUIRFS3806 | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| AUIRLS4030 | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| BSC016N04LSG | Infineon | Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| BUZ20 | Infineon | Power Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FDP150N10 | Onsemi | Power Field-Effect Transistor, 57A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FQP12P20 | Onsemi | Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FQP44N10 | Onsemi | Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF3415SPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF4905SPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 50 |
| IRF540N | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF640S | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF6668TR1PBF | IR | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF840PBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF9540NLPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 50 |
| IRFB3256PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 50 |
| IRFB4115PBF | Infineon | Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFB4510PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFBA90N20DPBF | Infineon | Power Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA | 50 |
| IRFBC30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFP150NPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFP4228PBF | IR | Power Field-Effect Transistor, 78A I(D), 150V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFP4332PBF | Infineon | Power Field-Effect Transistor, 57A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFPC40 | Vishay | Power Field-Effect Transistor, 6.8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFR13N20DPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50 |
| IRFR15N20DTRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50 |
| IRFS4020PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| IRL1104SPBF | IR | Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| KF80N08P | Kec Corp | Power Field-Effect Transistor, 80A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| KHB011N40F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB019N20P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB1D9N60I | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB2D0N60F | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB4D0N65F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB4D0N80P1 | Kec Corp | Power Field-Effect Transistor, 4A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| KHB4D5N60P | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB5D0N50F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB6D0N40P | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N65F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N65P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N80P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB9D0N50F1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB9D0N50P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| RSJ400N10TL | Rohm | Power Field-Effect Transistor, 40A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| STB10NK60Z-1 | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 50 |
| STF26N60M2 | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| STF33N60M6 | ST Micro | Power Field-Effect Transistor | 50 |
| STP80PF55 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| STW5NK100Z | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| TK10A50D | Toshiba | Power Field-Effect Transistor, 10A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| TK15E60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK20A60U(Q) | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| TK20E60U | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK34E10N1 | Toshiba | Power Field-Effect Transistor, 34A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK72A08N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| VNB35N07 | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 50 |
| 2SK2916 | Toshiba | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 49 |
| IRF720 | Microsemi | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | 49 |
| IRFI9530GPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 49 |
| IRFU014 | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 49 |
| IRF9540PBF | Vishay | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 48 |
| IRFP440 | Vishay | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 48 |
| IRFZ44ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 48 |
| HAT1055RJ | Renesas | Power Field-Effect Transistor, 5A I(D), 60V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 47 |
| IPB34CN10NG | Infineon | Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 47 |
| IRF630NSPBF | Infineon | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 47 |
| UJN1205K | USCI | Power Field-Effect Transistor, 38A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 | 46 |
| 2SK2267 | Toshiba | Power Field-Effect Transistor, 60A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45 |
| IRF3709ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 45 |
| IRF7468PBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 45 |
| IRL640A | Onsemi | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 45 |
| IRLR8743PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 45 |
| SI7997DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0078ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 45 |
| FQD2N100TM | Onsemi | Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 44 |
| IRF9Z34NPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 43 |
| SI4562DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 43 |
| 2N6766 | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | 42 |
| BUZ350 | Infineon | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 42 |
| FQD11P06TM | Onsemi | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 42 |
| IRF640 | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 42 |
| IRF7842TRPBF | IR | Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 42 |
| IRFZ48NSPBF | IR | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 42 |
| MTP23P06VG | Onsemi | Power Field-Effect Transistor, 23A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 42 |
| FDS8949 | Onsemi | Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 41 |
| SI4542DY | Onsemi | Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 41 |
| 2SK2543 | Toshiba | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| 2SK3878 | Toshiba | Power Field-Effect Transistor, 9A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| FDS86140 | Onsemi | Power Field-Effect Transistor, 11.2A I(D), 100V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 40 |
| IRF540ZPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 40 |
| JANTX2N6845 | Infineon | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 40 |
| STE40NC60 | ST Micro | Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| STW20NM50FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 40 |
| IRF430 | Harris | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 39 |
| IRF9Z34NS | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 39 |
| IRFR24N15D | Infineon | Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 38 |
| STW6NA80 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 38 |
| IRFZ34VSPBF | IR | Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 37 |
| IXTH24P20 | IXYS | Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 37 |
| IRF1324S-7PPBF | Infineon | Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 36 |
| IRFR5505TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 35 |
| BUK455-100A | NXP | Power Field-Effect Transistor, 26A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 34 |
| IRFP450 | Vishay | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 34 |
| STP20NM50FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 34 |
| IRF640NSTRLPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 32 |
| SPP18P06PH | Infineon | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 32 |
| UPA2794GR(0)-E1-AZ | Renesas | Power Field-Effect Transistor, 5.5A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 32 |
| MG50H2YM1 | Toshiba | Power Field-Effect Transistor, 50A I(D), 500V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 31 |
| STH3N150-2 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 31 |
| STP40NF10 | ST Micro | Power Field-Effect Transistor, 50A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 31 |
| SUB70N03-09BP | Vishay | Power Field-Effect Transistor, 70A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 31 |
| 2N7075 | Siliconix | Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 30 |
| 2SK2750 | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| AP4953GM-HF | Advanced power | Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| AUIRF9Z34N | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 30 |
| BTS3160D | Infineon | Power Field-Effect Transistor, 7.8A I(D), 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 30 |
| BUZ88A | Infineon | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 30 |
| G3R12MT12K | Navitas | Power Field-Effect Transistor, 155A I(D), 1200V, 0.0135ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 30 |
| IPW60R045CPA | Infineon | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 30 |
| IRFP4768PBF | Infineon | Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 30 |
| KHB9D0N90NA | Kec Corp | Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| MTW8N60E | Onsemi | Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 30 |
| SCT50N120 | ST Micro | Power Field-Effect Transistor, 65A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 30 |
| SCTW40N120G2VAG | ST Micro | Power Field-Effect Transistor, 33A I(D), 1200V, 0.105ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 30 |
| STV270N4F3 | ST Micro | Power Field-Effect Transistor, 270A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| STW60NE10 | ST Micro | Power Field-Effect Transistor, 60A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 30 |
| IRFL4105PBF | Infineon | Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 29 |
| STW13NK100Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 29 |
| AO3418 | Alpha Omega | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 28 |
| IPD70N03S4L-04 | Infineon | Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 28 |
| MTP2P50E | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28 |
| STP80NF10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28 |
| AON6242 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 60V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 26 |
| FDP032N08 | Onsemi | Power Field-Effect Transistor, 235A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 26 |
| IRL3803PBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 26 |
| AUIRF4905STRL | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IPB60R099CPA | Infineon | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IRF640NSPBF | IR | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IRFP260 | Vishay | Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 25 |
| IRFP4710PBF | Infineon | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 25 |
| BUZ355 | Infineon | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 24 |
| IRFP3710PBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 24 |
| IRFR9120N | Infineon | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 24 |
| IRFU3910 | IR | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 24 |
| NTF2955T1G | Onsemi | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 24 |
| SIR878BDP-T1-RE3 | Vishay | Power Field-Effect Transistor, 42.5A I(D), 100V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24 |
| STW50N65DM2AG | ST Micro | Power Field-Effect Transistor, 38A I(D), 650V, 0.087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 24 |
| IRF640PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 23 |
| MTP2P50EG | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 23 |
| IPP80N04S3-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB | 22 |
| IRF1405PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 22 |
| FQPF4P40 | Fairchild Semi | Power Field-Effect Transistor, 2.4A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 21 |
| IXFK24N100 | IXYS | Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | 21 |
| JANTX2N6798 | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 21 |
| BUZ36 | Siemens | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 20 |
| BUZ905DP | TT Electronics | Power Field-Effect Transistor, 16A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | 20 |
| C2M1000170J | Wolfspeed | Power Field-Effect Transistor, 5.3A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 20 |
| FQPF5N60C | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 20 |
| IPP030N10N5 | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 20 |
| SQJ431EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 200V, 0.221ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| STE30NK90Z | ST Micro | Power Field-Effect Transistor, 28A I(D), 900V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| STE70NM50 | ST Micro | Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| BUZ90A | Infineon | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19 |
| IMZ120R030M1HXKSA1 | Infineon | Power Field-Effect Transistor, 56A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 19 |
| IPP110N20N3G | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19 |
| IRFR9220PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 19 |
| IRF1010ESPBF | IR | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18 |
| IRF3515SPBF | IR | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18 |
| IRFP9240 | Vishay | Power Field-Effect Transistor, 12A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 18 |
| BSZ042N06NS | Infineon | Power Field-Effect Transistor, 98A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17 |
| BUZ30AH | Infineon | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17 |
| FQA90N15 | Onsemi | Power Field-Effect Transistor, 90A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17 |
| 2N6784 | Infineon | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 16 |
| BSG0812ND | Infineon | Power Field-Effect Transistor, 49A I(D), 25V, 0.0046ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 16 |
| IRF740 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 16 |
| FQP19N10 | Fairchild Semi | Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15 |
| STB34NM60ND | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 15 |
| STD65N55F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 14 |
| IRF9530NPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 13 |
| IRFS4010PBF | IR | Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 13 |
| IRFU120NPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 13 |
| SF200AA20 | Sansha Electric | Power Field-Effect Transistor, 200A I(D), 1-Element, Metal-oxide Semiconductor FET | 13 |
| SIR876DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 100V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 13 |
| SPD50P03LG | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 13 |
| MRF21085 | Freescale | Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | 12 |
| BUZ11A | Siemens | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10 |
| FQP6N60C | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10 |
| FQPF55N10 | Fairchild Semi | Power Field-Effect Transistor, 34.2A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| IRF7424 | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 10 |
| IRFR5410PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10 |
| IXFH28N60P3 | Littelfuse | Power Field-Effect Transistor, 28A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 10 |
| IXTM67N10 | IXYS | Power Field-Effect Transistor, 67A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 10 |
| SK260MB10 | Semikron | Power Field-Effect Transistor, 230A I(D), 100V, 0.0025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| STE45NK80ZD | ST Micro | Power Field-Effect Transistor, 45A I(D), 800V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| IRF9130 | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 9 |
| IRFP260N | Infineon | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 9 |
| BSZ042N06NSATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8 |
| IXTP01N100D | IXYS | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD | 8 |
| 2SK3566 | Toshiba | Power Field-Effect Transistor, 2.5A I(D), 900V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7 |
| AUIRF4905S | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 7 |
| IXTH1N200P3 | Littelfuse | Power Field-Effect Transistor, 1A I(D), 2000V, 40ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 7 |
| IXTH64N10L2 | IXYS | Power Field-Effect Transistor | 7 |
| STP9N60M2 | ST Micro | Power Field-Effect Transistor | 7 |
| BSC340N08NS3G | Infineon | Power Field-Effect Transistor, 23A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| BSM244F | Siemens | Power Field-Effect Transistor, 45A I(D), 400V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| CHT-PLA2016A-CSOIC16-T | Cissoid | Power Field-Effect Transistor | 5 |
| CHT-PLA4091A-TDFP16-T | Cissoid | Power Field-Effect Transistor, 1A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| IRFR5505PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5 |
| IRLI2203NPBF | IR | Power Field-Effect Transistor, 61A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5 |
| IXFH40N30Q | Littelfuse | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 5 |
| STE70NM60 | ST Micro | Power Field-Effect Transistor, 70A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| STP6NK50Z | ST Micro | Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4 |
| SUM55P06-19L | Siliconix | Power Field-Effect Transistor, 55A I(D), 60V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4 |
| 2SK2393-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1500V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| CSD17313Q2T | TI | Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| FCA75BC50 | Sansha Electric | Power Field-Effect Transistor, 75A I(D), 1-Element, Metal-oxide Semiconductor FET | 1 |
| NTD14N03RT4G | Onsemi | Power Field-Effect Transistor, 11.4A I(D), 25V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| SKM111AR | Semikron | Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| SPA04N60C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1 |
| SUD50P06-15-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1 |
| 2N6782 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | on request |
| 2SJ352-E | Renesas | Power Field-Effect Transistor, 8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK1579DYTR | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK1620(S) | Hitachi | Power Field-Effect Transistor, 10A I(D), 0.15ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| 2SK1623S | Renesas | Power Field-Effect Transistor, 20A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2225-E | Renesas | Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2231 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2917(F) | Toshiba | Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| 2SK3919-ZK-E1 | Renesas | Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AO4612 | Alpha Omega | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.056ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AOB20S60L | Alpha Omega | Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AOD5N50 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| AON6280 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AON7406 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AON7410 | Alpha Omega | Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AOT27S60L | Alpha Omega | Power Field-Effect Transistor, 27A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AUIRF540ZS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRF6215 | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| AUIRF6215STRL | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRF7304Q | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRF7309QTR | Infineon | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRF7341QTR | Infineon | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRFN8403TR | Infineon | Power Field-Effect Transistor, 95A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AUIRFN8459TR | IR | Power Field-Effect Transistor, 50A I(D), 40V, 0.0059ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AUIRFR9024N | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRFR9024NTR | IR | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRFS3307Z | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRFS3607 | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRFS4410Z | Infineon | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRLR024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLR2905 | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLR3110Z | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLS3036TRR | IR | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRLS4030-7P | Infineon | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BF1009S-E6327 | Infineon | Power Field-Effect Transistor, 0.025A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF1009SR-E6327 | Infineon | Power Field-Effect Transistor, 0.025A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF992 | NA Philips | Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BSC014N06NST | Infineon | Power Field-Effect Transistor, 257A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC022N03S | Infineon | Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC028N06LS3G | Infineon | Power Field-Effect Transistor, 100A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC076N06NS3G | Infineon | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC252N10NSFG | Infineon | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC350N20NSFD | Infineon | Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSM252F | Infineon | Power Field-Effect Transistor, 18A I(D), 1-Element, Metal-oxide Semiconductor FET | on request |
| BSP315P | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSP317PL6327 | Infineon | Power Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSP613PH6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSS83 | Philips Semi | Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BSZ076N06NS3G | Infineon | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSZ097N04LSG | Infineon | Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSZ110N08NS5ATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BTS112AE3045A | Infineon | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK563-60A | NXP | Power Field-Effect Transistor, 21A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK7611-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK7Y12-55B | Nexperia | Power Field-Effect Transistor, 61.8A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9575-55A | Nexperia | Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUK9624-55A | Nexperia | Power Field-Effect Transistor, 46A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK98180-100A | NXP | Power Field-Effect Transistor, 4.6A I(D), 100V, 0.201ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK9880-55 | Nexperia | Power Field-Effect Transistor, 3.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK9Y15-60E | Nexperia | Power Field-Effect Transistor, 53A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y4R4-40E | Nexperia | Power Field-Effect Transistor, 100A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y4R4-40E,115 | Nexperia | Power Field-Effect Transistor, 100A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y65-100E | Nexperia | Power Field-Effect Transistor, 19A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUZ10 | ST Micro | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ104L | Infineon | Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11 | Siemens | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11 | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ111S | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11A | ST Micro | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ12A | Infineon | Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BUZ357 | Infineon | Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | on request |
| BUZ76A | Infineon | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| CSD19502Q5B | TI | Power Field-Effect Transistor, 157A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMG2305UX-7 | Diodes | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMG6968U-7 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMN6070SSD-13 | Diodes | Power Field-Effect Transistor, 3.3A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMTH4004SPSQ-13 | Diodes | Power Field-Effect Transistor, 31A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCA20N60F | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCA47N60F | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCB11N60TM | Onsemi | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| FCD600N60Z | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FCP11N60F | Onsemi | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FCP190N60E | Onsemi | Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| FDA59N30 | Onsemi | Power Field-Effect Transistor, 59A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDB15N50 | Onsemi | Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB2532 | Onsemi | Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB2572 | Onsemi | Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB52N20TM | Onsemi | Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| FDB6670AL | Fairchild Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDD4685 | Onsemi | Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD5614P | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD5670 | Onsemi | Power Field-Effect Transistor, 21A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6637 | Onsemi | Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6690A | Onsemi | Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6N50FTM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD8444_F085 | Fairchild Semi | Power Field-Effect Transistor, 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD8586 | Fairchild Semi | Power Field-Effect Transistor, 35A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD8647L | Onsemi | Power Field-Effect Transistor, 14A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD8870-F085 | Onsemi | Power Field-Effect Transistor, 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDFS6N548 | Onsemi | Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC2523P | Onsemi | Power Field-Effect Transistor, 3A I(D), 150V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC6675BZ | Onsemi | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC86520L | Onsemi | Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229 | on request |
| FDMC8884 | Onsemi | Power Field-Effect Transistor, 9A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMQ8203 | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMS86310 | Fairchild Semi | Power Field-Effect Transistor, 17A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | on request |
| FDP26N40 | Fairchild Semi | Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDP2710_F085 | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDP3652 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDPF3860T | Onsemi | Power Field-Effect Transistor, 20A I(D), 100V, 0.0382ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDS2572 | Onsemi | Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| FDS2734 | Onsemi | Power Field-Effect Transistor, 3A I(D), 250V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS3992_NL | Fairchild Semi | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.062ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS4480 | Onsemi | Power Field-Effect Transistor, 10.8A I(D), 40V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS4559 | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS6982AS | Fairchild Semi | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS8958A | Onsemi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS8958A_NL | Fairchild Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT3N40TF | Fairchild Semi | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT434P | Fairchild Semi | Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT439N | Onsemi | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDW254P | Fairchild Semi | Power Field-Effect Transistor, 9.2A I(D), 20V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDWS9510L-F085 | Onsemi | Power Field-Effect Transistor, 50A I(D), 40V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | on request |
| FQAF13N80 | Onsemi | Power Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FQB11P06TM | Onsemi | Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB22P10TM | Onsemi | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB33N10LTM | Onsemi | Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB5N90TM | Onsemi | Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQD12N20TM | Onsemi | Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD13N10TF | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD17P06TF | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD17P06TM | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD2N80 | Fairchild Semi | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD5P20TM | Onsemi | Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7N30 | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7N30TM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7P20TM | Onsemi | Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQP27N25 | Onsemi | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP47P06 | Onsemi | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP50N06 | Onsemi | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP50N06L | Onsemi | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQPF13N50CF | Onsemi | Power Field-Effect Transistor, 13A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQU17P06TU | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | on request |
| FS8820 | Fortune | Power Field-Effect Transistor, 6.5A I(D), N-Channel, Metal-oxide Semiconductor FET | on request |
| HP4410DY | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IPB081N06L3G | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB17N25S3-100 | Infineon | Power Field-Effect Transistor, 17A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB200N25N3G | Infineon | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB80N04S403ATMA1 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB80N06S2L-06 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPD30N06S2L-13 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IPD30N08S2L-21 | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IPG20N04S4-08 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0076ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IPP120N04S3-02 | Infineon | Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IPP65R380C6 | Infineon | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IPW60R099C6 | Infineon | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| IRF1018EPBF | Infineon | Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF1018ESLPBF | Infineon | Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF1310NSPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF1404SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF150 | Harris | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| IRF220 | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| IRF250 | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | on request |
| IRF2804S-7PPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF2805STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3205STRRPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3205ZLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF3710LPBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF3710STRLPBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3710ZSPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF40H233 | Infineon | Power Field-Effect Transistor | on request |
| IRF520FI | ST Micro | Power Field-Effect Transistor, 7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF520NSPBF | Infineon | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF5210SPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF5210STRL | IR | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF5305 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF530A | Onsemi | Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF540NS | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF540NSTRLPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| IRF540NSTRRPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF540STRLPBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSTRLPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSTRRPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF620 | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630 | ST Micro | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630 | Harris | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630NSTRL | IR | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF640S | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF6641TR1PBF | IR | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6648TR1PBF | IR | Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6648TRPBF | Infineon | Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6892STR1PBF | IR | Power Field-Effect Transistor, 125A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| IRF7101PBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7301TRPBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7306 | Infineon | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF730S | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF7342D2PBF | IR | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7389TRPBF | Infineon | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF740A | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF740SPBF | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF7425PBF | IR | Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7425TRPBF | Infineon | Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7452TRPBF | Infineon | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7455TR | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7467PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7506TR | IR | Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7601TRPBF | Infineon | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7811APBF | IR | Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7853PBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7853TRPBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF8736TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF8910PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF9392PBF | Infineon | Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF9510PBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9520NPBF | Infineon | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9530 | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9530SPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9530STRLPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9540NS | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9620 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9630PBF | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9640SPBF | IR | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z14SPBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z14STRLPBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z24NPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9Z34S | Siliconix | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFB31N20DPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB4127PBF | Infineon | Power Field-Effect Transistor, 76A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB41N15DPBF | Infineon | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB59N10DPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFBE30STRLPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD014PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD024PBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD9024PBF | Vishay | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFF320 | Infineon | Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | on request |
| IRFH5053TRPBF | Infineon | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFH8201TRPBF | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| IRFHM8235TRPBF | Infineon | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFI4212H-117P | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.0725ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFI540NPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFIZ14GPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFL110TRPBF | Vishay | Power Field-Effect Transistor | on request |
| IRFL9014TRPBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRFP150PBF | Vishay | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP250NPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP260PBF | Vishay | Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP4227PBF | Infineon | Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP90N20DPBF | Infineon | Power Field-Effect Transistor, 90A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFPS3810PBF | Infineon | Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFR014 | Siliconix | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR014TR | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR110TR | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR1205TR | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR18N15DTRPBF | IR | Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR1N60ATR | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR220 | NXP | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR220NTRPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR2405PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR310 | Siliconix | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR3505PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR3910PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR4104PBF | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR48ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR7440PBF | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR825TRPBF | Infineon | Power Field-Effect Transistor, 6A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9010TRPBF | Vishay | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR9020 | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9024 | IR | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9024NPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9110PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9120 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9310 | Siliconix | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFS1Z0TRL | IR | Power Field-Effect Transistor, 0.82A I(D), 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | on request |
| IRFS3006-7PPBF | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| IRFS4227PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS4227TRLPBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS59N10DPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS59N10DTRLP | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFSL4710 | IR | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRFU1018EPBF | Infineon | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU320PBF | IR | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU3709ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU9210PBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | on request |
| IRFZ34N | Infineon | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFZ44N | IR | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFZ44NSPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFZ48STRR | IR | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFZ48ZPBF | IR | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3103PBF | Infineon | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3303SPBF | IR | Power Field-Effect Transistor, 38A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRL3402PBF | IR | Power Field-Effect Transistor, 85A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3502SPBF | IR | Power Field-Effect Transistor, 110A I(D), 20V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRL630S | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRL630STRRPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRL640STRLPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRLD024 | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLD120PBF | Vishay | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLIB4343PBF | IR | Power Field-Effect Transistor, 19A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRLL014N | IR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLL110TR | Siliconix | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLL2705 | Infineon | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLMS1503TRPBF | Infineon | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLMS1902TRPBF | Infineon | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLP3034PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRLR014TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRLR024NTR | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2703 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2905PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2905ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2908PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3103PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3705ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3717TRPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLU3636PBF | Infineon | Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRLU3705ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRLZ34NS | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IXFH36N60P | Littelfuse | Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | on request |
| IXFR140N20P | IXYS | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IXTH50N20 | IXYS | Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | on request |
| IXTM5N100A | IXYS | Power Field-Effect Transistor, 5A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| LND150N8-G | Microchip | Power Field-Effect Transistor | on request |
| MPS2907ARLRAG | Onsemi | Power Field-Effect Transistor | on request |
| MTB52N06VLT4 | Onsemi | Power Field-Effect Transistor, 52A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTD20P06HDLT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTD3055V-1 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTP12P10G | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| MTP3055EL | Motorola | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| NP110N055PUG-E1-AZ | Renesas | Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| NP88N04EHE-E1-AY | Renesas | Power Field-Effect Transistor, 88A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| NTB45N06G | Onsemi | Power Field-Effect Transistor, 45A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD20N06G | Onsemi | Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD2955G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD3055-094G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD3055L104-1G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD32N06LT4G | Onsemi | Power Field-Effect Transistor, 32A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD4302T4G | Onsemi | Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD6416ANLT4G | Onsemi | Power Field-Effect Transistor, 19A I(D), 100V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTDV20P06LT4G | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTGS3433T1 | Onsemi | Power Field-Effect Transistor | on request |
| NTMFS4934NT1G | Onsemi | Power Field-Effect Transistor | on request |
| NVTFS5826NLWFTAG | Onsemi | Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| PH8230E | Nexperia | Power Field-Effect Transistor, 67A I(D), 30V, 0.0132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| PHN210T | Nexperia | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| PSMN6R0-30YLB | Nexperia | Power Field-Effect Transistor, 71A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| PSMNR90-80ASEJ | Nexperia | Power Field-Effect Transistor, 495A I(D), 80V, 0.0009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-359 | on request |
| RFD3055SM | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| RFP4N05L | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RFP70N06 | Onsemi | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RJK0330DPB-01-J0 | Renesas | Power Field-Effect Transistor, 45A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| RJK0629JPE-00-J3 | Renesas | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| RLP1N06CLE | Intersil | Power Field-Effect Transistor, 3A I(D), 55V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RQA130N03TB | Rohm | Power Field-Effect Transistor, 13A I(D), 30V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SCT10N120 | ST Micro | Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | on request |
| SI2306DS-T1-E3 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI4465DY-T1 | Siliconix | Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4467DY | Siliconix | Power Field-Effect Transistor, 12A I(D), 12V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4532DY | Onsemi | Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4559EY-T1-E3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| SI4888DY | Vishay | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI4920DY | Vishay | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7117DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 1.1A I(D), 150V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7120ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7120DN-T1 | Vishay | Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI7409ADN-T1-E3 | Vishay | Power Field-Effect Transistor, 7A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7414DN-T1 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI7415DN-T1-E3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7434DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7460DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7464DP-T1-E3 | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7812DN-T1-E3 | Vishay | Power Field-Effect Transistor, 7.2A I(D), 75V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7848BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7923DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI8499DB-T2-E1 | Vishay | Power Field-Effect Transistor, 16A I(D), 20V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI9945AEY | Vishay | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA426DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.0236ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA433EDJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 20V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA436DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 8V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA444DJT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA921EDJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB404DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 12V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB433EDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 20V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB456DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 6.3A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIE868DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIHB24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SIJ478DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 80V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR462DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 18.9A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR492DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 27A I(D), 12V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR802DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 20V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR836DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIS413DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIS415DNT-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SISS10DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SISS98DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.1A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SK85MH10T | Semikron | Power Field-Effect Transistor, 80A I(D), 100V, 0.0075ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SKM180A020 | Semikron | Power Field-Effect Transistor, 180A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SPA20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPB07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SPP04N50C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPP08N80C3 | Infineon | Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPP11N80C3 | Infineon | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SQ2319ES-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | on request |
| SQ4917EY-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.048ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| SQD100N04-3M6L_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| SQD23N06-31L_GE3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQD50N05-11L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQD50P08-28_GE3 | Vishay | Power Field-Effect Transistor, 48A I(D), 80V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQJ402EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ403BEEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ443EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 40V, 0.029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ459EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 52A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ980AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJQ402E-T1_GE3 | Vishay | Power Field-Effect Transistor, 200A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQM120N10-3M8_GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB140NF55T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB30NE06L | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB55NE06 | ST Micro | Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB60NF06LT4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB70NF02LT4 | ST Micro | Power Field-Effect Transistor, 70A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB75NF75LT4 | ST Micro | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STD11N50M2 | ST Micro | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STD12NF06T4 | ST Micro | Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD16N65M2 | ST Micro | Power Field-Effect Transistor | on request |
| STD1NB50-1 | ST Micro | Power Field-Effect Transistor, 1.4A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| STD2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD30NF06LT4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD30NF06T4 | ST Micro | Power Field-Effect Transistor, 28A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD35NF06L | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD3NK80ZT4 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD5NM50T4 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD7NM80 | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD7NS20T4 | ST Micro | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD86N3LH5 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STE110NA20 | ST Micro | Power Field-Effect Transistor, 110A I(D), 200V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STE145N65M5 | ST Micro | Power Field-Effect Transistor | on request |
| STE26NA90 | ST Micro | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STF12N120K5 | ST Micro | Power Field-Effect Transistor | on request |
| STF40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STF7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STF8NK100Z | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STFI9N60M2 | ST Micro | Power Field-Effect Transistor | on request |
| STFW40N60M2 | ST Micro | Power Field-Effect Transistor | on request |
| STL10N65M2 | ST Micro | Power Field-Effect Transistor | on request |
| STL12P6F6 | ST Micro | Power Field-Effect Transistor | on request |
| STL160NS3LLH7 | ST Micro | Power Field-Effect Transistor | on request |
| STL16N65M2 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STL35N6F3 | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STL7DN6LF3 | ST Micro | Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STN4NF06L | ST Micro | Power Field-Effect Transistor, 4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STP120NF10 | ST Micro | Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP12N65M5 | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP140NF75 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP16NF06L | ST Micro | Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP19NB20FP | ST Micro | Power Field-Effect Transistor, 10A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP19NF20 | ST Micro | Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP24NF10 | ST Micro | Power Field-Effect Transistor, 26A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP25NM60ND | ST Micro | Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP3N150 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP55NF06FP | ST Micro | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP60NF10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP6N95K5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP6NB80 | ST Micro | Power Field-Effect Transistor, 5.7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP95N4F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP9NC60FP | ST Micro | Power Field-Effect Transistor, 9A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STQ1NK80ZR-AP | ST Micro | Power Field-Effect Transistor, 0.3A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | on request |
| STS25NH3LL | ST Micro | Power Field-Effect Transistor, 25A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STW11NK90Z | ST Micro | Power Field-Effect Transistor, 9.2A I(D), 900V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| STW18N60DM2 | ST Micro | Power Field-Effect Transistor | on request |
| STW20N95K5 | ST Micro | Power Field-Effect Transistor, 15.5A I(D), 950V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA | on request |
| STW25N95K3 | ST Micro | Power Field-Effect Transistor, 22A I(D), 950V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| STW45NM60 | ST Micro | Power Field-Effect Transistor, 45A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| STW75NF20 | ST Micro | Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | on request |
| STW88N65M5 | ST Micro | Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| STW9N150 | ST Micro | Power Field-Effect Transistor, 8A I(D), 1500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| SUB70N06-14 | Vishay | Power Field-Effect Transistor, 70A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUD06N10-225L-E3 | Siliconix | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD15N15-95-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD19N20-90-E3 | Vishay | Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD40N06-25L-E3 | Vishay | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUD45P03-15 | Siliconix | Power Field-Effect Transistor, 13A I(D), 30V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD45P03-15A | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD50N02-06P-E3 | Vishay | Power Field-Effect Transistor, 26A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD50N03-06P-E3 | Vishay | Power Field-Effect Transistor, 84A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUM110N08-10 | Siliconix | Power Field-Effect Transistor, 110A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM110N10-09-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM110P04-04L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 40V, 0.0042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM40N15-38-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM60N10-17-E3 | Vishay | Power Field-Effect Transistor, 60A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM80090E-GE3 | Vishay | Power Field-Effect Transistor, 128A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM90P10-19L-E3 | Vishay | Power Field-Effect Transistor, 17.2A I(D), 100V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUP75N05-06A | Siliconix | Power Field-Effect Transistor, 75A I(D), 50V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SUP75N05-06A-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUP75P03-07-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SUP75P05-08-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| TK130F06K3(TE24L) | Toshiba | Power Field-Effect Transistor, 130A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| TK16N60W,S1VF | Toshiba | Power Field-Effect Transistor | on request |
| TP2502N8 | Supertex | Power Field-Effect Transistor, 0.63A I(D), 20V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | on request |
| TPC8407 | Toshiba | Power Field-Effect Transistor | on request |
| UJN1208K | USCI | Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 | on request |
| VQ1000P | Vishay | Power Field-Effect Transistor, 0.025A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| ZXMC10A816N8TC | Diodes | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.23ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| ZXMS6002GTA | Diodes | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
Benefíciese con nosotros
Servicio COMSIT
Paquetes en consignación
Convierta su inventario excedente en flujo de efectivo y deje de almacenar stock antiguo o sin uso.
Más información
Consultoría y gestión de suministro
Con más de 30 años de experiencia, analizamos sus componentes electrónicos y le asesoramos en la optimización sostenible de la cadena de suministro.
Más información
Almacén central
Con más de 700 millones de componentes en stock, la base de datos de ComSIT le ayuda a encontrar exactamente las piezas que necesita.
Más información
Sourcing inteligente
Con acceso global a nuestra base de datos interconectada con más de 130 mil millones de componentes, encontramos sus piezas obsoletas o actuales.
Más información
laboratorio de análisis
En nuestro laboratorio interno, los especialistas examinan sus componentes con tecnología de última generación a través de un proceso de análisis certificado y en varias etapas para garantizar su idoneidad para el mercado.
Más información
