Power Field-Effect Transistors electronic components in stock
ComSIT stocks 3,798 power field-effect transistors part numbers (3,316 available from stock) from 57 manufacturers. Original certified parts, best price, fast worldwide delivery. Click a part number for full specifications, lifecycle status and a quote request.
Classification: Semiconductors > Transistors > Power Field-Effect Transistors
Power Field-Effect Transistors by manufacturer
- Infineon (1,003)
- Vishay (729)
- ST Micro (576)
- Onsemi (342)
- IR (302)
- Fairchild Semi (137)
- Toshiba (105)
- Alpha Omega (78)
- Nexperia (67)
- Siliconix (64)
- Diodes (61)
- NXP (56)
- Renesas (52)
- Harris (23)
- Siemens (21)
- Magnachip (20)
- Rohm (17)
- Kec Corp (16)
- IXYS (15)
- Taiwan Semi (15)
- TI (12)
- Littelfuse (11)
- IR-HiRel (9)
- General Semi (8)
- Intersil (7)
- Motorola (6)
- National (5)
- Philips Semi (5)
- Renesas Tech (5)
- Samsung (5)
- Semikron (5)
- Fuji Elec (4)
- Microchip (4)
- Supertex (4)
- Shindengen (3)
- Wolfspeed (3)
- Zetex (3)
- Cissoid (2)
- Microsemi (2)
- NJ Semi (2)
- Sansha Electric (2)
- Telefunken Mic (2)
- Thomson Elec (2)
- USCI (2)
- Advanced power (1)
- Analog Power (1)
- Efficient Corp (1)
- Fortune (1)
- Freescale (1)
- Hitachi (1)
- NA Philips (1)
- Navitas (1)
- Panjit (1)
- Sanyo Semi (1)
- Torex (1)
- TT Electronics (1)
- Vishay Semi (1)
| PART No. | MANUFACTURER | Description | STOCK |
|---|---|---|---|
| STL220N6F7 | ST Micro | Power Field-Effect Transistor, 120A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,008,000 |
| FDWS86368-F085H | Onsemi | Power Field-Effect Transistor, 80A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 402,000 |
| AM30N06-39D | Analog Power | Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 357,524 |
| STD6N52K3 | ST Micro | Power Field-Effect Transistor, 5A I(D), 525V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 340,000 |
| BSP318SE6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 325,246 |
| SCT070H120G3AG | ST Micro | Power Field-Effect Transistor | 308,998 |
| STN4NF03L | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 280,000 |
| FDMS9410-F085 | Onsemi | Power Field-Effect Transistor | 207,000 |
| SUD35N05-26L-E3 | Vishay | Power Field-Effect Transistor, 35A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150,000 |
| RF1S30N06LESM9A | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 149,972 |
| BUZ12 | Siemens | Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130,956 |
| BUK9540-100A | Philips Semi | Power Field-Effect Transistor, 37A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 119,695 |
| AUIRLU3114Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 108,188 |
| NVMFS5C460NLWFT3G | Onsemi | Power Field-Effect Transistor, 78A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100,000 |
| RFP30N06LE | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 96,294 |
| AUIRLR2905ZTRL | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 96,000 |
| DMN2058U-13 | Diodes | Power Field-Effect Transistor, 4.6A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 94,945 |
| BTS110 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 91,194 |
| AON2420 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 30V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 81,000 |
| AUIRFN8458TR | IR | Power Field-Effect Transistor | 80,000 |
| RLD03N06CLESM9A | Fairchild Semi | Power Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 66,900 |
| DMP3160L-7 | Diodes | Power Field-Effect Transistor, 2.7A I(D), 20V, 0.122ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 66,000 |
| MCH3421-TL-E | Onsemi | Power Field-Effect Transistor, 0.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 63,000 |
| DMN6040SFDE-7 | Diodes | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 61,500 |
| 2SK945 | Toshiba | Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 59,500 |
| BUK9675-55 | NXP | Power Field-Effect Transistor, 19.7A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 57,390 |
| SQ2389ES-T1_GE3 | Vishay | Power Field-Effect Transistor | 56,975 |
| RFD8P05SM9A | Harris | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 56,015 |
| IPD90N04S4-02 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 55,000 |
| MTD3055VLT4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 54,710 |
| IRLR024TRPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 53,970 |
| SQJ968EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 53,895 |
| SI7315DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 51,000 |
| NVD4810NT4G-VF01 | Onsemi | Power Field-Effect Transistor, 9A I(D), 30V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50,000 |
| RFD15P05SM9A | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50,000 |
| 2SK1579DYTR-E | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 48,000 |
| IPD26N06S2L-35 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 47,903 |
| FDD8896 | Onsemi | Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 47,395 |
| TPIC5201KC | TI | Power Field-Effect Transistor, 7.5A I(D), 60V, 0.125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,387 |
| BTS410E | Siemens | Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,300 |
| BUK9635-55 | NXP | Power Field-Effect Transistor, 34A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,200 |
| BUK9107-40ATC | NXP | Power Field-Effect Transistor, 75A I(D), 40V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 46,400 |
| BUZ104S | Infineon | Power Field-Effect Transistor, 13.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 46,237 |
| BUK9640-100A,118 | Nexperia | Power Field-Effect Transistor, 39A I(D), 100V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45,748 |
| SPD07N60S5 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 45,500 |
| NVD5890NLT4G | Onsemi | Power Field-Effect Transistor, 123A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45,000 |
| SI3455DV-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 45,000 |
| BTS100 | Infineon | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 44,173 |
| DMP2066LSS-13 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 42,340 |
| 2SK2741 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 42,000 |
| IRLL024NPBF | Infineon | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 39,740 |
| IPP77N06S2-12 | Infineon | Power Field-Effect Transistor, 77A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 39,500 |
| IPI70N04S406AKSA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 38,550 |
| RFD10P03LSM9A | Harris | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 38,230 |
| BUK9230-55A | Nexperia | Power Field-Effect Transistor, 38A I(D), 55V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 37,725 |
| SQ2308ES-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 36,495 |
| DMT5015LFDF-7 | Diodes | Power Field-Effect Transistor, 9.1A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 36,000 |
| CPH6442-TL-W | Onsemi | Power Field-Effect Transistor, 6A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 35,400 |
| BUZ10 | Siemens | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 35,025 |
| FDS6982AS | Onsemi | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 35,000 |
| GF4410 | General Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 34,990 |
| SI4416DY-T1 | Siliconix | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 34,360 |
| STD3NK60ZT4 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 33,089 |
| IRF7101TR | IR | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 33,083 |
| IRLL014TR | Siliconix | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 32,090 |
| BUK9575-100A | Nexperia | Power Field-Effect Transistor, 23A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 32,001 |
| PHB11N06LT | NXP | Power Field-Effect Transistor, 10.3A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 32,000 |
| IRF7811WTRPBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 31,794 |
| RFP12N10L | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 31,785 |
| STD19NE06L-1 | ST Micro | Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 31,039 |
| BUK9635-55A/T3 | Nexperia | Power Field-Effect Transistor, 34A I(D), 55V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30,400 |
| IPA50R380CE | Infineon | Power Field-Effect Transistor, 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 29,400 |
| BUZ11 | ST Micro | Power Field-Effect Transistor, 33A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28,577 |
| NVMFS6H824NWFT1G | Onsemi | Power Field-Effect Transistor, 103A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 28,000 |
| PHD3N20E | NXP | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 27,480 |
| BSC093N04LSG | Infineon | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 27,420 |
| SI6966EDQ-T1 | Siliconix | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 26,735 |
| STB11NK40ZT4 | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 26,000 |
| 2SK2865(TE16L1,NQ) | Toshiba | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 25,837 |
| IRFIZ24NPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 25,388 |
| STP14NK50ZFP | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 25,200 |
| STB4NK60Z-1 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 25,000 |
| AUIRF7759L2TR | IR | Power Field-Effect Transistor, 375A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 24,830 |
| FQU5N60CTU | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,821 |
| FQB34P10TM-F085 | Onsemi | Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 24,542 |
| BTS244ZE-3062A | Infineon | Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,140 |
| AUIRF1404ZSTRL | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| IRFR120TRRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 24,000 |
| SI7450DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SIA437DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 29.7A I(D), 20V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SIS412DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SQ2315ES-T1_GE3 | Vishay | Power Field-Effect Transistor | 24,000 |
| BTS113AE3045A | Infineon | Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 23,859 |
| STD4NK80ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 23,465 |
| PMPB85ENEA | NXP | Power Field-Effect Transistor | 23,342 |
| BUK7208-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.0156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 22,500 |
| PHN1013 | NXP | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 22,450 |
| IRFR5305TRPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 22,230 |
| FQP9N90C | Onsemi | Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 21,050 |
| SI2306BDS-T1-GE3 | Vishay | Power Field-Effect Transistor | 21,000 |
| SI6465DQ-T1 | Siliconix | Power Field-Effect Transistor, 8.8A I(D), 8V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 21,000 |
| BSP124 | NXP | Power Field-Effect Transistor, 0.25A I(D), 250V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20,915 |
| IPB80N04S4-03 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 20,000 |
| IRFBE30SPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20,000 |
| SPB80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 20,000 |
| FDC608PZ | Onsemi | Power Field-Effect Transistor, 5.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 19,310 |
| IRLI640GPBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19,000 |
| FDC642P-F085P | Onsemi | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 18,629 |
| IPI90N04S4-02 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 18,250 |
| IRF7707TRPBF | IR | Power Field-Effect Transistor, 7A I(D), 20V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA | 18,165 |
| FQD12N20LTF | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 18,000 |
| IRFR220TRPBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 18,000 |
| SQJ910AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18,000 |
| STP10NK60ZFP | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17,843 |
| NVMFS6H824NT1G | Onsemi | Power Field-Effect Transistor, 103A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,820 |
| BUK7Y28-75B | Nexperia | Power Field-Effect Transistor, 35.5A I(D), 75V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,760 |
| GF4412 | General Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,500 |
| STD80N4F6 | ST Micro | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 17,500 |
| BUZ73A | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17,341 |
| FDY1002PZ | Fairchild Semi | Power Field-Effect Transistor, 0.83A I(D), P-Channel, Metal-oxide Semiconductor FET | 17,200 |
| PMZ270XN | Nexperia | Power Field-Effect Transistor, 2.15A I(D), 20V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,104 |
| IRFR3607TRPBF | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 16,805 |
| IRL530NSTRL | IR | Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 16,800 |
| BUZ104 | Infineon | Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 16,000 |
| IRF7805TRPBF | Infineon | Power Field-Effect Transistor, 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 16,000 |
| SUD45P03-09-GE3 | Vishay | Power Field-Effect Transistor, 45A I(D), 30V, 0.0087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 16,000 |
| BUK452-100A | NXP | Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,950 |
| EPC2111 | Efficient Corp | Power Field-Effect Transistor, 16A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Gallium Nitride, High Electron Mobility FET | 15,930 |
| SUB75N03-07 | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 15,875 |
| STP40NF12 | ST Micro | Power Field-Effect Transistor, 40A I(D), 120V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,489 |
| STD17NF03L-1 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 15,450 |
| BSL211SPH6327 | Infineon | Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 15,000 |
| IPB100N04S4-H2 | Infineon | Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 15,000 |
| SIA431DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), -20V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 15,000 |
| STP80NF03L-04 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,000 |
| BUZ71 | Siemens | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,968 |
| NVD5890NT4G-VF01 | Onsemi | Power Field-Effect Transistor | 14,920 |
| STP5NK52ZD | ST Micro | Power Field-Effect Transistor | 14,850 |
| SPP20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,815 |
| FDD8647L | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 14,795 |
| STW80NE06-10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 14,760 |
| STD17NF03LT4 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 14,625 |
| STD3NK60Z-1 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 14,625 |
| IRF510PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,600 |
| BSP315E6327 | Infineon | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 14,585 |
| DMTH4007LPS-13 | Diodes | Power Field-Effect Transistor, 15.5A I(D), 40V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 14,289 |
| STD2NK90Z-1 | ST Micro | Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 14,237 |
| VNP28N04-E | ST Micro | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 14,000 |
| XP132A1635SR | Torex | Power Field-Effect Transistor | 14,000 |
| SPD30N03L | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 13,780 |
| IPD25N06S4L30ATMA2 | Infineon | Power Field-Effect Transistor, 25A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 13,425 |
| IRF7306TRPBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 13,210 |
| STD6NM60N-1 | ST Micro | Power Field-Effect Transistor, 4.6A I(D), 600V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 13,094 |
| BST82 | Philips Semi | Power Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 13,060 |
| AO4466 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,885 |
| BUK9640-100A | Nexperia | Power Field-Effect Transistor, 39A I(D), 100V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,685 |
| RFD3N08LSM9A | Fairchild Semi | Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,598 |
| BUK7624-55A | Nexperia | Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,540 |
| PHD2N50E | NXP | Power Field-Effect Transistor, 2A I(D), 500V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,500 |
| AUIRLR3410 | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,424 |
| STD4NK50ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,385 |
| MTD3055VL-1 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,295 |
| BF964 | Telefunken Mic | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 12,163 |
| 2N7002BKV | Nexperia | Power Field-Effect Transistor | 12,000 |
| IRF7379TR | IR-HiRel | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 12,000 |
| IRFR210TRPBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,000 |
| IRFR220TRLPBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 12,000 |
| IRLHM620TRPBF | IR | Power Field-Effect Transistor, 26A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,000 |
| SQ3426AEEV-T1_GE3 | Vishay | Power Field-Effect Transistor | 12,000 |
| SQD10N30-330H_GE3 | Vishay | Power Field-Effect Transistor | 12,000 |
| STF6N65K3 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 650V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 12,000 |
| STL4P2UH7 | ST Micro | Power Field-Effect Transistor, 4A I(D), 20V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 12,000 |
| BUK7275-100A | NXP | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 11,810 |
| IRF7416TRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 11,740 |
| IRLR3802PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 11,700 |
| PHP18NQ10T | Nexperia | Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,650 |
| IRF7205TR | IR | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 11,645 |
| STY139N65M5 | ST Micro | Power Field-Effect Transistor, 130A I(D), 650V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,400 |
| STD2NK90ZT4 | ST Micro | Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 11,344 |
| SPD09P06PLG | Infineon | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 11,288 |
| STD4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 11,175 |
| STD3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,151 |
| IRLU3802PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 11,025 |
| IRF620PBF | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 11,000 |
| RFD14N05L | Onsemi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 10,950 |
| IRFI730GPBF | Vishay | Power Field-Effect Transistor, 3.7A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,900 |
| STP8NM50N | ST Micro | Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,900 |
| BUZ73AL | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,880 |
| IRFR24N15DPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,725 |
| BUK7614-55A | Nexperia | Power Field-Effect Transistor, 73A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,562 |
| SUD08P06-155L-E3 | Vishay | Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,558 |
| IRLZ14PBF | Vishay | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,550 |
| STU5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 10,500 |
| SQ2308CES-T1_GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 10,409 |
| NP55N055SUG | Renesas | Power Field-Effect Transistor, 55A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,290 |
| STD5NK40ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,245 |
| IRFR024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,125 |
| NDT452AP | Onsemi | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 10,014 |
| SSU2N60 | Samsung | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,010 |
| 2SJ278MYTR | Renesas Tech | Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| AOD444 | Alpha Omega | Power Field-Effect Transistor, 12A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,000 |
| DMN1008UFDFQ-13 | Diodes | Power Field-Effect Transistor, 12.2A I(D), 12V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| FQD5N50CTM | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,000 |
| GF9926 | General Semi | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| IPB45N06S4L-08 | Infineon | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 10,000 |
| IRFR014TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,000 |
| STD10NF30 | ST Micro | Power Field-Effect Transistor, 10A I(D), 300V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,000 |
| IPD50N06S4L-08 | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 9,945 |
| GF4936 | General Semi | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,920 |
| BSZ034N04LSATMA1 | Infineon | Power Field-Effect Transistor, 19A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,818 |
| BF2040R-E6814 | Infineon | Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 9,715 |
| IRF1312S | IR | Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,700 |
| BF963 | Telefunken Mic | Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 9,684 |
| IPB80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 9,669 |
| SIR800ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 177A I(D), 20V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,668 |
| IRF7343PBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 9,630 |
| IRFL9014TR | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 9,610 |
| BSP149L6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,581 |
| IRFU420PBF | IR | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 9,525 |
| IRF740 | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9,490 |
| STP14NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9,350 |
| 2SK3067 | Toshiba | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,340 |
| IPD14N06S2-80 | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 9,335 |
| BSO604NS2 | Infineon | Power Field-Effect Transistor, 5A I(D), 55V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,300 |
| BUK763R1-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,271 |
| IRFZ24NSTRLPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,140 |
| MTD3055V | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,043 |
| SQS405CENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.015ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET | 9,020 |
| AON2406 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 20V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| IRFR310TRLPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 9,000 |
| IRLR3410TRRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 9,000 |
| SI6415DQ-T1-GE3 | Vishay | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SI7810DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SI7820DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SIS888DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.2A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SIS990DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SQ3456BEV-T1_GE3 | Vishay | Power Field-Effect Transistor, 0.0078A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| STU11N65M2 | ST Micro | Power Field-Effect Transistor | 9,000 |
| STU6N65M2 | ST Micro | Power Field-Effect Transistor | 9,000 |
| TSM3424CX6RF | Taiwan Semi | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| TSM3446CX6RF | Taiwan Semi | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| TSM6968DCARV | Taiwan Semi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| BTS114AE3045A | Siemens | Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,995 |
| SFR9024TM | Fairchild Semi | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 8,995 |
| SI7439DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 8,950 |
| BSO4822 | Infineon | Power Field-Effect Transistor, 12.7A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,940 |
| BSC100N03MSG | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,920 |
| IRFL210TR | Vishay | Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 8,865 |
| STD10PF06T4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 8,845 |
| IRFI840GLCPBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,750 |
| IRLU014PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 8,650 |
| IPB80N06S2-08 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 8,645 |
| HUF76633P3 | Fairchild Semi | Power Field-Effect Transistor, 39A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,497 |
| IRFR210 | IR | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 8,450 |
| STP11NK40Z | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,440 |
| STU16N65M2 | ST Micro | Power Field-Effect Transistor | 8,400 |
| IRF7404TR | IR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 8,375 |
| 2SK2604 | Toshiba | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,268 |
| SUM110P06-07L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 60V, 0.0069ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 8,240 |
| STD2NK60Z-1 | ST Micro | Power Field-Effect Transistor, 1.5A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 8,200 |
| SUP75N05-06A | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 8,150 |
| BUZ74 | Infineon | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,100 |
| PJW4N06A-AU_R2_000A1 | Panjit | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,035 |
| IPI80N04S403AKSA1 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 8,000 |
| IRF7101 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| IRFH5006TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| IRFI530N | Infineon | Power Field-Effect Transistor, 12A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,000 |
| IRFIZ24N | Infineon | Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,000 |
| IRLHM630TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| STH140N8F7-2 | ST Micro | Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 8,000 |
| STN1NF20 | ST Micro | Power Field-Effect Transistor, 1A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| BUK482-60A | NXP | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,955 |
| BSZ440N10NS3G | Infineon | Power Field-Effect Transistor, 5.3A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,915 |
| SUD35N10-26P-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 7,900 |
| FQD2N60CTF | Fairchild Semi | Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 7,890 |
| BSP171PL6327 | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,858 |
| IRFD9120 | Vishay | Power Field-Effect Transistor, 1A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,801 |
| BTS413A | Siemens | Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,790 |
| STB60NE06L-16T4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 7,710 |
| IRF7380TRPBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 7,695 |
| IRFI620GPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,650 |
| STD2HNK60Z-1 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 7,650 |
| IRF7807TRPBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,645 |
| SQS484EN-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,612 |
| DMN2040LTS-13 | Diodes | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| HUF76129D3ST | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,500 |
| MMSF5N03HDR2 | Onsemi | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHD6N10E | NXP | Power Field-Effect Transistor, 6.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHD9NQ20T | Nexperia | Power Field-Effect Transistor, 8.7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHN110 | NXP | Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 7,500 |
| SI4542DY-T1 | Vishay | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| STD18N65M5 | ST Micro | Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 7,500 |
| STD9N65M2 | ST Micro | Power Field-Effect Transistor | 7,500 |
| STD5NK50ZT4 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,495 |
| FQU1N60CTU | Onsemi | Power Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 7,340 |
| BUK221-50DY | NXP | Power Field-Effect Transistor, 4A I(D), 45V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,200 |
| IRF7306QTRPBF | IR | Power Field-Effect Transistor, 3.6A I(D), P-Channel, Metal-oxide Semiconductor FET | 7,190 |
| SUD40N10-25-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,184 |
| BUK456-200A | NXP | Power Field-Effect Transistor, 19A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,050 |
| IRFI520N | IR | Power Field-Effect Transistor, 7.6A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,039 |
| NDB6020P | Onsemi | Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,850 |
| NTD18N06T4G | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,817 |
| AON1611 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 20V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,791 |
| IRFB9N60APBF | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,786 |
| IRFR110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,750 |
| IRFR9020TRPBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,750 |
| BUZ100-E3044 | Infineon | Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,745 |
| BUK7608-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,704 |
| IRF7103QTRPBF | Infineon | Power Field-Effect Transistor, 3A I(D), N-Channel, Metal-oxide Semiconductor FET | 6,673 |
| IRFR310 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,636 |
| SPB04N60C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,600 |
| FDS6982 | Fairchild Semi | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,590 |
| IRCZ34 | Thomson Elec | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,550 |
| IRF7811AVPBF | Infineon | Power Field-Effect Transistor | 6,550 |
| FML19N50G | Fuji Elec | Power Field-Effect Transistor, 1.4A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,495 |
| SI2305DS-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 6,460 |
| IRFR220PBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,450 |
| ZVN2106GTA | Diodes | Power Field-Effect Transistor, 0.71A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,405 |
| IRFR420PBF | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,370 |
| HAT2165H-EL-E | Renesas | Power Field-Effect Transistor, 55A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,365 |
| SPP08N50C3 | Infineon | Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,344 |
| IRFR430APBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,225 |
| IRF610STRLPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,190 |
| IRF7103IPBF | IR | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,175 |
| CSD18531Q5A | TI | Power Field-Effect Transistor, 100A I(D), 60V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,129 |
| IRF7471TRPBF | IR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 6,110 |
| IRF7314TRPBF | Infineon | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 6,100 |
| IRFU9014PBF | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 6,099 |
| BTS112A | Infineon | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,097 |
| BUZ71A | ST Micro | Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,080 |
| NP90N055PUH-E1-AY | Renesas | Power Field-Effect Transistor | 6,060 |
| BTS247Z | Infineon | Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,046 |
| AO4476A | Alpha Omega | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| AO8822 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| AON6220 | Alpha Omega | Power Field-Effect Transistor, 48A I(D), 100V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| BSC150N03LDG | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| BSP318SL6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| DMG2307L-7 | Diodes | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| FDMC8884 | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| FDMS7580 | Onsemi | Power Field-Effect Transistor, 15A I(D), 25V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IPB80N04S4-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,000 |
| IRF1010ESTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IRFHS8242TR2PBF | IR | Power Field-Effect Transistor, 9.9A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IRFR9110TRLPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,000 |
| IRFU320PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 6,000 |
| IRLR014 | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,000 |
| MGSF2N02ELT1G | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 6,000 |
| PMPB33XN | Nexperia | Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| QS6J1TR | Rohm | Power Field-Effect Transistor, 1.5A I(D), 20V, 0.235ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI1012R | Vishay | Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| SI5415AEDU-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SI5429DU-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SI5459DU-T1-GE3 | Siliconix | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7148DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7634BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 22.5A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7904BDN-T1-E3 | Vishay | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIA527DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIAA40DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIDR626DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIHFR220TRL-GE3 | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,000 |
| SIHFR320-GE3 | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,000 |
| SIHJ6N65E-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 650V, 0.868ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIJ438DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIJ470DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIJ482DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| SIJA54DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIR172ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR606DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 37A I(D), 100V, 0.0162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR638DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.00088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR692DP-T1-RE3 | Vishay | Power Field-Effect Transistor, 24.2A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR788DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA10BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA12BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA52DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA54DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.00235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA58DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 109A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS176LDN-T1-GE3 | Vishay | Power Field-Effect Transistor, 42.3A I(D), 70V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS410DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS435DNT-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 20V, 0.0054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISA24DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH106DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 6,000 |
| SISH129DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.0114ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH402DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH410DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH434DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH617DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISS04DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 80A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQ3481EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C | 6,000 |
| SQ7414EN-T1-E3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ401EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ465EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ858AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 58A I(D), 40V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ952EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQS407ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQS415ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SSM3K16FU(TE85L) | Toshiba | Power Field-Effect Transistor, 0.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL4P3LLH6 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL51N3LLH5 | ST Micro | Power Field-Effect Transistor, 51A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL60N3LLH5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STL8N65M5 | ST Micro | Power Field-Effect Transistor, 1.4A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STL8P2UH7 | ST Micro | Power Field-Effect Transistor | 6,000 |
| STL9N60M2 | ST Micro | Power Field-Effect Transistor | 6,000 |
| STL9N65M2 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STP3NK50Z | ST Micro | Power Field-Effect Transistor | 6,000 |
| STU7N65M2 | ST Micro | Power Field-Effect Transistor | 6,000 |
| SI2306DS-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 5,950 |
| IRFR120ZTRPBF | Infineon | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,943 |
| IRF7470TRPBF | IR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,910 |
| SPD18P06PG | Infineon | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 5,900 |
| SQ2362ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 5,900 |
| STF7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,900 |
| STF2N62K3 | ST Micro | Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,850 |
| STD4NK60ZT4 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,838 |
| SI7421DN-T1-E3 | Vishay | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,815 |
| IRLR8259PBF | Infineon | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,775 |
| IRF540NSTRL | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,725 |
| SQS460EN-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,725 |
| 2SJ317NY | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,720 |
| STW10NK60Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 5,715 |
| IPB50N10S3L-16 | Infineon | Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,700 |
| S838T | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,700 |
| STP9NK50ZFP | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,700 |
| STU3LN62K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,700 |
| IRFI644GPBF | Vishay | Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,699 |
| FQU5N40TU | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,689 |
| IRLML6401TR | IR | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,680 |
| FDP2710 | Onsemi | Power Field-Effect Transistor, 50A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,648 |
| IRFR9024TRPBF | IR | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,625 |
| GFB50N03 | General Semi | Power Field-Effect Transistor, 50A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,600 |
| GFB70N03 | General Semi | Power Field-Effect Transistor, 70A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,600 |
| IRFD014 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,600 |
| 2SK2542 | Toshiba | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,563 |
| SQM40N15-38_GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,533 |
| FQD7P20TF | Fairchild Semi | Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,525 |
| IRFU024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 5,514 |
| SI4949EY | Siliconix | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,500 |
| FDY1002PZ | Onsemi | Power Field-Effect Transistor, -.83A I(D), -20V, 1.8ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,480 |
| IRFR220 | IR | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,458 |
| FDP3682 | Onsemi | Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,450 |
| RFD16N05SM9A | Intersil | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,415 |
| IRFR420 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,400 |
| DMG6968UQ-7 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,380 |
| STP4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,350 |
| IPD15N06S2L-64 | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,315 |
| SI4920DY-T1 | Vishay | Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 5,308 |
| TN5325N8-G | Microchip | Power Field-Effect Transistor, 0.316A I(D), 250V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 5,295 |
| SISH615ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,275 |
| IRLR3714ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,270 |
| STF8NM50N | ST Micro | Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,250 |
| IRFR210TR | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,245 |
| IPB90N06S4-04 | Infineon | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,220 |
| PHT6N06T | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,205 |
| SI4559ADY-T1-E3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,190 |
| FDS7064SN3 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,180 |
| NTD24N06LT4 | Onsemi | Power Field-Effect Transistor, 24A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,178 |
| IRFUC20PBF | Vishay | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,175 |
| SIHD14N60E-GE3 | Vishay | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,174 |
| BSC077N12NS3G | Infineon | Power Field-Effect Transistor, 98A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,150 |
| STP4NA40FI | ST Micro | Power Field-Effect Transistor, 2.8A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,150 |
| IRF7343TRPBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,145 |
| STS8DNF3LL | ST Micro | Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,135 |
| ZXMHC3A01T8TA | Diodes | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.12ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,027 |
| AOD2N100 | Alpha Omega | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,000 |
| AON7430 | Alpha Omega | Power Field-Effect Transistor, 34A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| AON7502 | Alpha Omega | Power Field-Effect Transistor, 30A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| BSC090N03MSG | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| BUK9275-100A | Nexperia | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| BUK9775-55A | NXP | Power Field-Effect Transistor, 11A I(D), 55V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| FDD8444L | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 40V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| HUFA76409D3ST | Intersil | Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| IPD50N03S4L-06 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| IRF6643TR1PBF | IR | Power Field-Effect Transistor, 6.2A I(D), 150V, 0.0345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| IRFBG30PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| IRFR3209A | Fairchild Semi | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| IRLR034A | Samsung | Power Field-Effect Transistor, 23A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,000 |
| MPS2907AG | Onsemi | Power Field-Effect Transistor | 5,000 |
| NVTFS5826NLTAG | Onsemi | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| PHP125 | NXP | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,000 |
| PHT6NQ10T | NXP | Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| RD3G400GNTL | Rohm | Power Field-Effect Transistor, 40A I(D), 40V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| SI4162DY-T1-GE3 | Vishay | Power Field-Effect Transistor, 19.3A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,000 |
| SI9410DY-T1 | Vishay | Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| SPD04N80C3 | Infineon | Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STB6N65M2 | ST Micro | Power Field-Effect Transistor | 5,000 |
| STD13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD1HN60K3 | ST Micro | Power Field-Effect Transistor | 5,000 |
| STD3LN62K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD3N62K3 | ST Micro | Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STD3NM60T4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD40NF03LT4 | ST Micro | Power Field-Effect Transistor, 40A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STD6NK50ZT4 | ST Micro | Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD7N52DK3 | ST Micro | Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STP3NB60 | ST Micro | Power Field-Effect Transistor, 3.3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| TPH12008NH | Toshiba | Power Field-Effect Transistor, 44A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| TPH4R10ANL | Toshiba | Power Field-Effect Transistor | 5,000 |
| TPH4R606NH | Toshiba | Power Field-Effect Transistor, 32A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| TSM090N08PQ56RLG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM120N10PQ56RLG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM4NB60CPROG | Taiwan Semi | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| TSM60N380CPROG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM6963SDCARV | Taiwan Semi | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| UPA2790GR-E1-A | Renesas | Power Field-Effect Transistor, 6A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 5,000 |
| SI4902DY | Vishay | Power Field-Effect Transistor, 6.7A I(D), N-Channel, Metal-oxide Semiconductor FET | 4,996 |
| IRF8714TRPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,980 |
| BUZ10L-E3045 | Infineon | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,974 |
| IRF7606TR | IR | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,970 |
| BTS240A | Infineon | Power Field-Effect Transistor, 58A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 4,950 |
| SI7716ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,941 |
| IPD80R2K8CE | Infineon | Power Field-Effect Transistor, 1.9A I(D), 800V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,930 |
| SUD50N02-09P | Vishay | Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,925 |
| AON7444 | Alpha Omega | Power Field-Effect Transistor, 33A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,900 |
| STD1NK80ZT4 | ST Micro | Power Field-Effect Transistor, 1A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,900 |
| IRFR3910TRPBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,880 |
| BSC190N15NS3G | Infineon | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,840 |
| 2SK2663 | Shindengen | Power Field-Effect Transistor, 1A I(D), 900V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,826 |
| FDS9926A | Onsemi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,810 |
| BUK7628-100A/T3 | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,800 |
| BUK9608-55A | Nexperia | Power Field-Effect Transistor, 125A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,800 |
| GFB75N03 | General Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,800 |
| HUF75829D3ST | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,800 |
| IRFPS3815PBF | Infineon | Power Field-Effect Transistor, 105A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,770 |
| IRFR024NTRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,745 |
| IXTA1N100P-TRL | Littelfuse | Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,745 |
| IRFPG30PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 4,710 |
| IRFD9110PBF | Vishay | Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,700 |
| FDB7030BL | Onsemi | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,695 |
| BSP315PL6327 | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,655 |
| AUIRLR120N | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,650 |
| RFP4N05 | Harris | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,641 |
| IRLU8256PBF | IR | Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,625 |
| RFD8P06LESM9A | Fairchild Semi | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,620 |
| SUD25N06-45L-E3 | Vishay | Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,598 |
| STB85NF55T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,580 |
| SI7850ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,570 |
| IRFU1010ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,549 |
| BUK7Y08-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 4,535 |
| IRL7486MTRPBF | Infineon | Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,520 |
| BUK6Y14-40P | Nexperia | Power Field-Effect Transistor, 64A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 4,500 |
| SPU02N60S5 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,500 |
| IPD30N10S3L-34 | Infineon | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 4,489 |
| STB21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,460 |
| FDD6637 | Fairchild Semi | Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,440 |
| BUK9880-55/CU | Nexperia | Power Field-Effect Transistor, 3.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,426 |
| FQD7N10LTM | Onsemi | Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,407 |
| IRF840LC | Siliconix | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,400 |
| STS5NF60L | ST Micro | Power Field-Effect Transistor, 5A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,395 |
| IRF1404S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,382 |
| IRFP140PBF | Vishay | Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 4,360 |
| IRFR120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,320 |
| STB36NM60ND | ST Micro | Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,315 |
| IRF3205ZPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,305 |
| IRLR120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,275 |
| IRLML6402TRPBF | Infineon | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 4,270 |
| IRFIBC30GPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,200 |
| BUK78150-55 | NXP | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,194 |
| STP11NM60ND | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,190 |
| MMDF2N02ER2 | Onsemi | Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,174 |
| IRF7601PBF | Infineon | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,160 |
| IRF7416 | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,159 |
| STP5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,150 |
| IRLR110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,125 |
| BSP100 | NXP | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,060 |
| IRLR3915PBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,050 |
| BSC050N03LSG | Infineon | Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,020 |
| SQ2361ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.177ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 4,011 |
| AOB298L | Alpha Omega | Power Field-Effect Transistor, 58A I(D), 100V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,000 |
| AOU4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 4,000 |
| AUIRF7303QTR | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRF7316QTR | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRF7343QTR | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRFN8401TR | Infineon | Power Field-Effect Transistor | 4,000 |
| FQPF10N50CF | Onsemi | Power Field-Effect Transistor, 10A I(D), 500V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRF7316TRPBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| IRF7809AVTRPBF | Infineon | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRF9952TR | IR-HiRel | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH5104TRPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH5220TRPBF | Infineon | Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7107TRPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7110TRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7188TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH8303TRPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFH8316TRPBF | Infineon | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM4231TRPBF | Infineon | Power Field-Effect Transistor, 22A I(D), 25V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM8228TRPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM830TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM8337TRPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHS8342TRPBF | Infineon | Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFR024TRPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRFR3504ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRFZ24N | Philips Semi | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRLH7134TRPBF | Infineon | Power Field-Effect Transistor, 26A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRLR014TR | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRLR2705TR | IR | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRLZ14STRLPBF | Vishay | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,000 |
| PHB37N06LT | NXP | Power Field-Effect Transistor, 37A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| SIHFR420TR-GE3 | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| SQD50N06-09L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,000 |
| STF20NF20 | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STF2LN60K3 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STF7N52K3 | ST Micro | Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STN4NF20L | ST Micro | Power Field-Effect Transistor, 1A I(D), 200V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| STP5N60M2 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STP75NF75FP | ST Micro | Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STP77N6F6 | ST Micro | Power Field-Effect Transistor, 77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| SUD40N08-16-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,000 |
| TSM4N90CIC0G | Taiwan Semi | Power Field-Effect Transistor | 4,000 |
| TSM7N90CIC0G | Taiwan Semi | Power Field-Effect Transistor | 4,000 |
| IRF7463PBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,990 |
| IPD25CN10NG | Infineon | Power Field-Effect Transistor, 35A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,980 |
| SI7190DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.4A I(D), 250V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,970 |
| STW15NB50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 3,940 |
| STH15NA50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 3,921 |
| FDD8424H | Onsemi | Power Field-Effect Transistor, 20A I(D), 40V, 0.024ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,917 |
| NP100N055PUH-E1-AY | Renesas | Power Field-Effect Transistor | 3,910 |
| STF5N95K3 | ST Micro | Power Field-Effect Transistor, 4A I(D), 950V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,900 |
| FQD9N25TM | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,889 |
| 2SK1585-T1-AZ | Renesas | Power Field-Effect Transistor, 1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,860 |
| STU9N60M2 | ST Micro | Power Field-Effect Transistor | 3,825 |
| IRFR224TRPBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,815 |
| IRF7809AVPBF | Infineon | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,802 |
| FDB7030L_NL | Fairchild Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,800 |
| IRFR420APBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,799 |
| FQD3N60CTM-WS | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,780 |
| IRFU120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,750 |
| STP11N60DM2 | ST Micro | Power Field-Effect Transistor | 3,750 |
| STP17NK40ZFP | ST Micro | Power Field-Effect Transistor, 15A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,750 |
| STD5NK40Z-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,745 |
| ZVN2120GTA | Diodes | Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,725 |
| IRF610 | Fairchild Semi | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,724 |
| BUZ72A | ST Micro | Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,719 |
| IRFR310PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,719 |
| IAUS300N10S5N015T | Infineon | Power Field-Effect Transistor | 3,704 |
| IRLH6224TRPBF | Infineon | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,700 |
| STP7NK80ZFP | ST Micro | Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,700 |
| IRLD014PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,695 |
| SI7850DP-T1-E3 | Vishay | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,680 |
| FDMC8854 | Onsemi | Power Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,670 |
| BUK7C06-40AITE | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,658 |
| NP88N055KUG-E1-AY | Renesas | Power Field-Effect Transistor, 88A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,655 |
| IRLHS6242TR2PBF | IR | Power Field-Effect Transistor, 10A I(D), 20V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,600 |
| STP8NM50 | ST Micro | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,600 |
| STU2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,600 |
| NVF2955T1G | Onsemi | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 3,597 |
| SI9948AEY-T1-E3 | Vishay | Power Field-Effect Transistor | 3,597 |
| IRF7413ZTRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,595 |
| STD17N06L | ST Micro | Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,580 |
| IRLU8259PBF | IR | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,575 |
| PHT8N06LT | NXP | Power Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,565 |
| IRF7495TR | IR | Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,560 |
| FQT7N10LTF | Fairchild Semi | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,555 |
| IPD90N04S3-04 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,545 |
| RFD8P05SM | Harris | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,517 |
| FDN5618P | Onsemi | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,513 |
| AOI4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251A | 3,500 |
| FQPF11P06 | Onsemi | Power Field-Effect Transistor, 8.6A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,500 |
| SIHP18N50C-E3 | Vishay | Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,500 |
| IRFIZ46NPBF | IR | Power Field-Effect Transistor, 33A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,498 |
| SPD08P06PG | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,469 |
| IRFZ44NSTRLPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,451 |
| IRL2203N | Infineon | Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,450 |
| IRFI9640GPBF | Vishay | Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,449 |
| IRFR3607PBF | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,443 |
| FQU13N10LTU | Onsemi | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,430 |
| SI7137DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,420 |
| STP20NF06L | ST Micro | Power Field-Effect Transistor, 20A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,420 |
| STF11N52K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,408 |
| BSP318SH6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,405 |
| IRFHM831TRPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,400 |
| STP4NK50ZD | ST Micro | Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,400 |
| STP22NF03L | ST Micro | Power Field-Effect Transistor, 22A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,367 |
| ZXMP6A16DN8TA | Diodes | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,360 |
| IPD35N10S3L-26 | Infineon | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,355 |
| MDF5N50BTH | Magnachip | Power Field-Effect Transistor | 3,350 |
| IRLD014 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,347 |
| IRF9Z24STRR | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,340 |
| SI7844DP-T1-E3 | Vishay | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,335 |
| BTS132E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 3,327 |
| IRF9910PBF | Infineon | Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,311 |
| SI4544DY | Siliconix | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,300 |
| STP5NK50ZFP | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,300 |
| BSP92E6327 | Infineon | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,295 |
| PHT6N06LT | Nexperia | Power Field-Effect Transistor, 2.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,295 |
| SI7450DP-T1 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,288 |
| IRF7805TR | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,278 |
| SI9945AEY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,275 |
| IRFU9212 | IR | Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,257 |
| IRF3707PBF | IR | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,250 |
| IRFR9014TR | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,214 |
| IRF820STRLPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRF840STRLPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRFH7936TRPBF | IR | Power Field-Effect Transistor, 76A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,200 |
| IRFHS8342TR2PBF | IR | Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRFR120TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,200 |
| IRL3714ZPBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,200 |
| IRFU210PBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,199 |
| FQP33N10 | Onsemi | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,195 |
| NTMFS4927NT3G | Onsemi | Power Field-Effect Transistor | 3,190 |
| STL120N4F6AG | ST Micro | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,181 |
| IRF7821TRPBF | Infineon | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,170 |
| MMSF3P02HDR2 | Onsemi | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,165 |
| FDS4435BZ | Onsemi | Power Field-Effect Transistor | 3,164 |
| BSP613PL6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,160 |
| AUIRF3315S | Infineon | Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,150 |
| IRF730ASPBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,150 |
| STP11NK40ZFP | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,150 |
| MTP12N10E | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,143 |
| BUK98150-55 | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,135 |
| CSD18503Q5A | TI | Power Field-Effect Transistor, 100A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,129 |
| IRFP254PBF | Vishay | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 3,125 |
| FQU5N60C | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,124 |
| IRF8313TRPBF | IR | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,120 |
| IRF7831TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,118 |
| FQP32N20C | Onsemi | Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,115 |
| DMN6040SK3-13 | Diodes | Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,100 |
| MTB30P06VT4G | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,100 |
| SI7121DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 10.6A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,085 |
| IRF7530TRPBF | IR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,068 |
| NDS9952 | National | Power Field-Effect Transistor, 3A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,055 |
| IRL3714ZSPBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,035 |
| IRF7353D2TR | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,025 |
| SPN01N60C3 | Infineon | Power Field-Effect Transistor, 0.3A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,010 |
| 2SJ296(S)TL | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| 2SK2796STL-E | Renesas | Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO4406 | Alpha Omega | Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO4840 | Alpha Omega | Power Field-Effect Transistor, 6A I(D), 40V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO6424 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AO6804A | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 20V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AOL1414 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON1634 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 30V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON2403 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON2408 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 20V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON6156 | Alpha Omega | Power Field-Effect Transistor, 100A I(D), 45V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON6230 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AON6260 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AON6590 | Alpha Omega | Power Field-Effect Transistor, 100A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON7520 | Alpha Omega | Power Field-Effect Transistor, 50A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AOT15S60L | Alpha Omega | Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| AOTF11S60L | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| AUIRFS6535 | Infineon | Power Field-Effect Transistor, 19A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AUIRFZ44NS | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| BUK78150-55A | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| BUZ110SLE3045A | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| BUZ72-E3044 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMN1008UFDFQ-7 | Diodes | Power Field-Effect Transistor, 12.2A I(D), 12V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMN3020UFDF-7 | Diodes | Power Field-Effect Transistor, 15A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMP3100L-7 | Diodes | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| FDMC2512SDC | Onsemi | Power Field-Effect Transistor, 32A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 3,000 |
| FDMS0312S | Onsemi | Power Field-Effect Transistor, 19A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS3008SDC | Onsemi | Power Field-Effect Transistor, 29A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS7556S | Onsemi | Power Field-Effect Transistor, 35A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8025S | Onsemi | Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8027S | Onsemi | Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8558S | Onsemi | Power Field-Effect Transistor, 38A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8560S | Onsemi | Power Field-Effect Transistor, 35A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8570S | Onsemi | Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS86105 | Onsemi | Power Field-Effect Transistor, 6A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDPF5N50NZ | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| GFD30N03 | Vishay Semi | Power Field-Effect Transistor, 43A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| GFD50N03 | General Semi | Power Field-Effect Transistor, 65A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| IRF3315STRRPBF | IR | Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| IRF8915TRPBF | Infineon | Power Field-Effect Transistor, 8.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| IRFIBE30GPBF | Vishay | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| IRFR014TRLPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFR9014TRL | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFR9020PBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFRC20TRLPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFU220PBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| IRLR2905ZTRLPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRLU3715PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,000 |
| MDF13N50BTH | Magnachip | Power Field-Effect Transistor | 3,000 |
| SI1024X-T1-E3 | Vishay | Power Field-Effect Transistor, 0.485A I(D), N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SI1473DH-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI2318CDS-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 3,000 |
| SI5418DU-T1-GE3 | Siliconix | Power Field-Effect Transistor, 11.6A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5419DU-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5479DU-T1-E3 | Siliconix | Power Field-Effect Transistor, 16A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5504BDC-T1-GE3 | Vishay | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5515CDC-T1-GE3 | Siliconix | Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5517DU-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 20V, 0.039ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5902BDC-T1-GE3 | Siliconix | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7102DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 12V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7106DN-T1-E3 | Vishay | Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7115DN-T1-E3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7149DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.7A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7220DN-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SI7288DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 40V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7308DN-T1-E3 | Vishay | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7308DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7619DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 10.5A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7629DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7658ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 36A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7682DP-T1-E3 | Vishay | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7794DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7892BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7905DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 5A I(D), 40V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8429DB-T1-E1 | Vishay | Power Field-Effect Transistor, 7.8A I(D), 8V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8483DB-T2-E1 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8497DB-T2-E1 | Vishay | Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIA406DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA441DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 40V, 0.047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA462DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA920DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 8V, 0.027ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB408DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB414DK-T1-E3 | Vishay | Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIB417AEDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 8V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB457EDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE818DF-T1-E3 | Vishay | Power Field-Effect Transistor, 16A I(D), 75V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE818DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 75V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE832DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHD12N50E-GE3 | Vishay | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| SIHD1K4N60E-GE3 | Vishay | Power Field-Effect Transistor, 4.2A I(D), 600V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHD3N50D-GE3 | Vishay | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHD7N60E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHFR1N60A-GE3 | Vishay | Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIHH14N65E-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHJ10N60E-T1-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHJ8N60E-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SIHLR024TRL-GE3 | Vishay | Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIHLU014-GE3 | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| SIR158DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR164DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR402DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.7A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR418DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR424DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.4A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR466DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR616DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.2A I(D), 200V, 0.0535ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR642DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR800DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 35.4A I(D), 20V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA00DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 30V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA04DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA06DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS402DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS430DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS438DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.3A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS454DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SISS23DN-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SIZ904DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIZ920DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0071ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQ3419EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 6.9A I(D), 40V, 0.058ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA | 3,000 |
| SQ3461EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 12V, 0.025ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA | 3,000 |
| SQ7414AENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 3,000 |
| SQA403EJ-T1_GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ204EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 12V, 0.0083ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET | 3,000 |
| SQJ409EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ412EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ415EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ463EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 11A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ464EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ486EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ872EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 24.5A I(D), 150V, 0.0355ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ940EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 40V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ942EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJA37EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJA76EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 75A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJB70EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 11.3A I(D), 100V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQS944ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 40V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STB23NM50N | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| STB3NK60ZT4 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STF2HNK60Z | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STF5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STF5N62K3 | ST Micro | Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STFI16N65M2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STI4N62K3 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL10N3LLH5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL11N3LLH6 | ST Micro | Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL12N65M2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL13NM60N | ST Micro | Power Field-Effect Transistor, 1.9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL19N60DM2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL24N60M6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL40C30H3LL | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL40N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL45N10F7AG | ST Micro | Power Field-Effect Transistor, 18A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL45P3LLH6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL60N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL62P3LLH6 | ST Micro | Power Field-Effect Transistor, 62A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STL6P3LLH6 | ST Micro | Power Field-Effect Transistor, 6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STL7N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL9P2UH7 | ST Micro | Power Field-Effect Transistor, 9A I(D), 20V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STP62NS04Z | ST Micro | Power Field-Effect Transistor, 62A I(D), 33V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STU2N105K5 | ST Micro | Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STU3N65M6 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-251 | 3,000 |
| STU4N62K3 | ST Micro | Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| STU5N65M6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STU7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| TPCA8011-H(TE12L,Q) | Toshiba | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| TSM6968SDCARV | Taiwan Semi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AUIRLR024ZTRL | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,999 |
| STF8NM60ND | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,997 |
| NTDV20P06LT4G-VF01 | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,996 |
| AO4614B | Alpha Omega | Power Field-Effect Transistor, 6A I(D), 40V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,995 |
| STP5NB40 | ST Micro | Power Field-Effect Transistor, 4.7A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,990 |
| IRFP440PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,975 |
| IPI600N25N3G | Infineon | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,969 |
| BSP373NH6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,965 |
| BTS132 | Infineon | Power Field-Effect Transistor, 24A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,965 |
| IRFB4620PBF | Infineon | Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,945 |
| IRLMS6802TR | IR | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,945 |
| BSC014N06NS | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,940 |
| IRL7833PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,940 |
| BSP372NH6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,935 |
| IRLU024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,925 |
| STD7NM80-1 | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,925 |
| STU4N80K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,925 |
| SISA18ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,915 |
| SPD03N60C3 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,915 |
| AO4421 | Alpha Omega | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.04ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET | 2,900 |
| IRF820ALPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,900 |
| IRFBC30APBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| IRL3715ZPBF | IR | Power Field-Effect Transistor, 50A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| IRLMS2002TR | IR | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,900 |
| SIHB12N60E-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,900 |
| SIHP15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| STF40NF06 | ST Micro | Power Field-Effect Transistor, 23A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| DMP2035U-7 | Diodes | Power Field-Effect Transistor, 4.9A I(D), 20V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,895 |
| TP2504N8 | Supertex | Power Field-Effect Transistor, 1.2A I(D), 40V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 2,895 |
| TJ9A10M3 | Toshiba | Power Field-Effect Transistor, 9A I(D), 100V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,890 |
| IRLML5203TR | IR | Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,885 |
| BF998RW | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,875 |
| BF543B-GS08 | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,850 |
| IRF620SPBF | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,850 |
| IRFR224 | Siliconix | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,850 |
| IRFU3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,850 |
| IRLML2502TR | IR | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,850 |
| PHX14NQ20T | NXP | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,850 |
| SIHD6N65E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,850 |
| STD1NK60-1 | ST Micro | Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,850 |
| IRF9910TRPBF | IR | Power Field-Effect Transistor, 12A I(D), N-Channel, Metal-oxide Semiconductor FET | 2,849 |
| BUZ272 | Infineon | Power Field-Effect Transistor, 15A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,846 |
| IRFU420 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,829 |
| IRFR9N20DPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,825 |
| IRFU320 | Siliconix | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,825 |
| STP9NK50Z | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,818 |
| STF7N65M2 | ST Micro | Power Field-Effect Transistor | 2,801 |
| AUIRF1324S | Infineon | Power Field-Effect Transistor, 195A I(D), 24V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,800 |
| IRFH8337TR2PBF | IR | Power Field-Effect Transistor, 12A I(D), 30V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,800 |
| IRFI9630GPBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,800 |
| IRFIB6N60APBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,800 |
| STS17NF3LL | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,800 |
| BSP295L6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,798 |
| IRFPC50 | Vishay | Power Field-Effect Transistor, 11A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,795 |
| IRL540NSTRLPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,785 |
| BSP324H6327 | Infineon | Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,770 |
| FDP2532 | Onsemi | Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,756 |
| SQ7414EN-T1 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,755 |
| AUIRLR3705Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,750 |
| SI5499DC-T1-E3 | Siliconix | Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,750 |
| STP25N06 | ST Micro | Power Field-Effect Transistor, 25A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,744 |
| SMD10P06L | Siliconix | Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,732 |
| IRFR9220TRPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,727 |
| IRLR3410TRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,725 |
| FCA47N60 | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,722 |
| HUF75321D3ST | Onsemi | Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,720 |
| IRFP350 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 2,719 |
| RF1S9540SM9A | Intersil | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,718 |
| IRFP31N50LPBF | Vishay | Power Field-Effect Transistor, 31A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,707 |
| IPD600N25N3G | Infineon | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,705 |
| SI9945AEY-T1 | Vishay | Power Field-Effect Transistor, 3.7A I(D), N-Channel, Metal-oxide Semiconductor FET | 2,704 |
| AOTF22N50 | Alpha Omega | Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,700 |
| HUF76629D3S | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,700 |
| IRF710PBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,700 |
| IRLIZ44N | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,700 |
| SIHFR9220-GE3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,700 |
| SSM6J505NU,LF(T | Toshiba | Power Field-Effect Transistor, 12A I(D), 12V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,700 |
| SI3445DV | Vishay | Power Field-Effect Transistor, 5.6A I(D), 8V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,695 |
| BUZ215 | Siemens | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,694 |
| BSC031N06NS3G | Infineon | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,685 |
| BSP135L6327 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,685 |
| BUZ344 | Infineon | Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 2,672 |
| DMP3056LSD-13 | Diodes | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,650 |
| IRL530PBF | IR | Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,650 |
| DMN3150L-7 | Diodes | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,646 |
| IRFR014 | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,645 |
| SIA429DJT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 20V, 0.0205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,645 |
| STB60NF06T4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,640 |
| IRFU9210PBF | IR | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,625 |
| IRF7413TRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,618 |
| IRF710SPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,600 |
| IRF9Z14PBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,600 |
| SI7370DP-T1-E3 | Vishay | Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,600 |
| STF100N6F7 | ST Micro | Power Field-Effect Transistor | 2,600 |
| STL13N60M6 | ST Micro | Power Field-Effect Transistor | 2,600 |
| BTS115A-E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2,595 |
| BUK437-500B | NXP | Power Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,593 |
| BSP108 | NXP | Power Field-Effect Transistor, 0.5A I(D), 80V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,590 |
| STP14NF12FP | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,589 |
| BUK9K25-40E | NXP | Power Field-Effect Transistor | 2,585 |
| MTB75N05HDT4 | Onsemi | Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,580 |
| IRF7319TRPBF | Infineon | Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,560 |
| SI7370DP-T1 | Vishay | Power Field-Effect Transistor, 9.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,560 |
| AUIRF5305TRL | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,550 |
| IRLU3714ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,550 |
| BSP296E6327 | Infineon | Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,545 |
| IRF7904PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 10.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,545 |
| RS1L180GNTB | Rohm | Power Field-Effect Transistor, 18A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,540 |
| ZXMP6A17KTC | Diodes | Power Field-Effect Transistor, 4.4A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,535 |
| STD17N06 | ST Micro | Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,525 |
| AO4404 | Alpha Omega | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,515 |
| SUM60N04-12LT-E3 | Vishay | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,507 |
| IRL630SPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,505 |
| AO8808A | Alpha Omega | Power Field-Effect Transistor, 7.9A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET | 2,500 |
| AOD468 | Alpha Omega | Power Field-Effect Transistor, 11.5A I(D), 300V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD476 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD4S60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD7S65 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| BSO211P | Infineon | Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| BTS129 | Infineon | Power Field-Effect Transistor, 27A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| BUK9219-55A | Nexperia | Power Field-Effect Transistor, 55A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| DMP4051LK3-13 | Diodes | Power Field-Effect Transistor, 7.2A I(D), 40V, 0.051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD3N50NZTM | Onsemi | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD4N60NZ | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD5N50NZTM | Onsemi | Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD6612A | Onsemi | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD7N60NZTM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD8453LZ | Onsemi | Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD86113LZ | Onsemi | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDS6994S | Onsemi | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FDS7764A | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FDS89161LZ | Onsemi | Power Field-Effect Transistor, 2.7A I(D), 100V, 0.105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FQD1N80TM | Onsemi | Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FQD5N50TM | Fairchild Semi | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| HAT2168H-EL-E | Renesas | Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IPD65R400CE | Infineon | Power Field-Effect Transistor, 15.1A I(D), 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| IRFBC30ASPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IRFR024ATM | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,500 |
| IRLZ34PBF | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| IRLZ44PBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| MTD3055ELT4 | Motorola | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NDD04N50ZT4G | Onsemi | Power Field-Effect Transistor, 3A I(D), 500V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NDS8961 | Fairchild Semi | Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NTDV3055L104T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| PHD27NQ10T | NXP | Power Field-Effect Transistor, 28A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RDD022N60TL | Rohm | Power Field-Effect Transistor, 2A I(D), 600V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK0328DPB-01-J0 | Renesas | Power Field-Effect Transistor, 60A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK0656DPB-00-J5 | Renesas | Power Field-Effect Transistor, 40A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK1054DPB-00-J5 | Renesas | Power Field-Effect Transistor, 20A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RRH140P03GZETB | Rohm | Power Field-Effect Transistor, 14A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4304DY-T1-E3 | Vishay | Power Field-Effect Transistor, 24A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4420BDY-T1-E3 | Vishay | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4561DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.2A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 2,500 |
| SI4684DY-T1-E3 | Siliconix | Power Field-Effect Transistor, 16A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4936DY-T1-E3 | Vishay | Power Field-Effect Transistor, 5.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,500 |
| SI9933BDY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SIR866DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SPD14N06S2-80 | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| SQ4850EY-T1_GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STB80NF03L-04-1 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,500 |
| STD10LN80K5 | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD10N60M2 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD10NF10T4 | ST Micro | Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD10NM65N | ST Micro | Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| STD120N4F6 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD15N60M2-EP | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD15N65M5 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD16NF25 | ST Micro | Power Field-Effect Transistor, 13A I(D), 250V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD17NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD18NF03L | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD26P3LLH6 | ST Micro | Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD30NF03LT4 | ST Micro | Power Field-Effect Transistor, 30A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD3N65M6 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD47N10F7AG | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD4NS25T4 | ST Micro | Power Field-Effect Transistor, 4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD5N65M6 | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD7N60M2 | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD8NM60N | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STLD125N4F6AG | ST Micro | Power Field-Effect Transistor, 101A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STLD200N4F6AG | ST Micro | Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STP11NM60 | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| STS10P3LLH6 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,500 |
| STS11NF30L | ST Micro | Power Field-Effect Transistor, 11A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STS3DPF20V | ST Micro | Power Field-Effect Transistor, 3A I(D), 20V, 0.135ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STS4NF100 | ST Micro | Power Field-Effect Transistor, 4A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM4944DCSRL | Taiwan Semi | Power Field-Effect Transistor, 12.2A I(D), 30V, 0.0132ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM7401CSRL | Taiwan Semi | Power Field-Effect Transistor, 8A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM900N06CPROG | Taiwan Semi | Power Field-Effect Transistor | 2,500 |
| UPA2780GR | Renesas | Power Field-Effect Transistor, 14A I(D), 30V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| ZXMS6004DN8-13 | Diodes | Power Field-Effect Transistor, 60V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IRF5803TRPBF | IR | Power Field-Effect Transistor, 3.4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,499 |
| SIZ728DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,498 |
| BSC057N08NS3G | Infineon | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| IRFTS9342TRPBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| STD18N06LT4G-VF01 | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| IPB072N15N3G | Infineon | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,490 |
| IRFB4227PBF | Infineon | Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,490 |
| DMN10H170SK3-13 | Diodes | Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,480 |
| S886T | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,480 |
| STD18NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,480 |
| STU4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,475 |
| SI4836DY-T1 | Vishay | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,465 |
| RFD14N05 | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,461 |
| MDD14N25CRH | Magnachip | Power Field-Effect Transistor, 10.2A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,454 |
| BSP297L6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,450 |
| SMP60N03-10L | Siliconix | Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,439 |
| RFD14N05SM | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,435 |
| CSD25401Q3 | TI | Power Field-Effect Transistor, 14A I(D), 20V, 0.0182ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,430 |
| TSM042N03CSRLG | Taiwan Semi | Power Field-Effect Transistor, 30A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,426 |
| FDS8926A | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,425 |
| STN1HNK60 | ST Micro | Power Field-Effect Transistor, 0.4A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,410 |
| AUIRFR4620 | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| HUF75307D3ST | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| IRF9510STRRPBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| IRFBF20STRLPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| IRFH5306TR2PBF | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| IRL3202PBF | IR | Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,400 |
| NP15P06SLG-E1-AY | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| NVB072N65S3 | Onsemi | Power Field-Effect Transistor, 44A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| PHP20NQ20T | Nexperia | Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| RFD14N05LSM9A | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| SIRA01DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0049ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| SQM120N04-1M9_GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| STD3NK80Z-1 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,400 |
| STP80NF06 | ST Micro | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,400 |
| IRF6617TR1 | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET | 2,396 |
| IRF7404TRPBF | Infineon | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,395 |
| IRFR9024PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,378 |
| FDMS86101DC | Fairchild Semi | Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 2,376 |
| IRF7834PBF | Infineon | Power Field-Effect Transistor, 19A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,375 |
| SPD30P06P | Infineon | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,365 |
| IXTT6N120 | Littelfuse | Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA | 2,358 |
| IRFH8325TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,350 |
| IRFI520GPBF | Vishay | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,350 |
| STD5N20T4 | ST Micro | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,350 |
| IRF7603TR | IR | Power Field-Effect Transistor, 5.6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,348 |
| TK13A60D(Q) | Toshiba | Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,348 |
| BUK7628-100A | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,345 |
| STP7NK80Z | ST Micro | Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,340 |
| IPT059N15N3 | Infineon | Power Field-Effect Transistor, 155A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,325 |
| FQD5N60CTM | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,323 |
| ZVN4306A | Diodes | Power Field-Effect Transistor, 1.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,310 |
| SI7460DP-T1-E3 | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,307 |
| IRFP064PBF | Vishay | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,300 |
| IRF7306TR | IR | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,295 |
| IRFL014TR | Vishay | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 2,295 |
| BSP135H6327 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,290 |
| NDS9407 | Onsemi | Power Field-Effect Transistor | 2,290 |
| STP3NK90Z | ST Micro | Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,284 |
| HUF75309D3S | Harris | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,283 |
| SI4214DDY-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.0195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,280 |
| NTD5865NLT4G | Onsemi | Power Field-Effect Transistor, 40A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,270 |
| SQS405ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,261 |
| IRF840A | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,250 |
| IRFU9220PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,250 |
| IRLU7807ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,250 |
| STD7NK40ZT4 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,250 |
| SPD07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,245 |
| BUK964R2-55B | Nexperia | Power Field-Effect Transistor, 75A I(D), 50V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,244 |
| FQU8P10TU | Onsemi | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,240 |
| IRLL2703 | Infineon | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 2,240 |
| SI7848DP-T1-E3 | Vishay | Power Field-Effect Transistor, 10.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,235 |
| IRFZ44ZPBF | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,230 |
| NDS9933A | Fairchild Semi | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.14ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,230 |
| HAF2001-90 | Renesas | Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,227 |
| IRFR4104TR | IR-HiRel | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,225 |
| FQA13N80 | Fairchild Semi | Power Field-Effect Transistor, 12.6A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,220 |
| NDT2955 | Onsemi | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,220 |
| AUIRF3205ZS | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,210 |
| HUFA75645S3S | Onsemi | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,200 |
| IRFP254A | Fairchild Semi | Power Field-Effect Transistor, 25A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,200 |
| NTD5802NT4G | Onsemi | Power Field-Effect Transistor, 16.4A I(D), 40V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,200 |
| RFD3055LESM9A | Onsemi | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,193 |
| MMDF3N03HDR2 | Onsemi | Power Field-Effect Transistor, 4.1A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,185 |
| NDS9933 | National | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.11ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,180 |
| SI9407AEY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,180 |
| IRFU420APBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,175 |
| STD5NM60-1 | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,175 |
| SI9948AEY | Siliconix | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.17ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,165 |
| BUZ32H | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,150 |
| IRFP244PBF | Vishay | Power Field-Effect Transistor, 15A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,150 |
| IRF730 | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,149 |
| MDD2N60RH | Magnachip | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,148 |
| BUZ73 | Infineon | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,140 |
| SI4840DY-T1 | Vishay | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,140 |
| IRF7201TR | IR-HiRel | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,135 |
| IRFR420TR | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,135 |
| FDZ206P | Fairchild Semi | Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,130 |
| IRF7413 | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,127 |
| MMDF2C02HDR2 | Motorola | Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,104 |
| AUIRFR3607 | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,100 |
| AUIRLR3114Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,100 |
| HAT2164H | Renesas | Power Field-Effect Transistor, 60A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,100 |
| IRFB812PBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,100 |
| STS15N4LLF3 | ST Micro | Power Field-Effect Transistor, 15A I(D), 40V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,095 |
| MDD3N50GRH | Magnachip | Power Field-Effect Transistor | 2,094 |
| IRF620 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,093 |
| NTD3055-094T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,080 |
| AUIRFS8407-7TRL | IR | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,075 |
| IRFR15N20DPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,075 |
| BF998RAW | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,070 |
| RFD16N05 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,070 |
| FDC637BNZ | Onsemi | Power Field-Effect Transistor, 6.2A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,060 |
| IRF7220-TRPBF | IR | Power Field-Effect Transistor, 14A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,055 |
| MTD4N20T4 | Motorola | Power Field-Effect Transistor, 4A I(D), 200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,055 |
| SQD19P06-60L_GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,055 |
| STB11NK50ZT4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,054 |
| IRL3714PBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,050 |
| STW8NK80Z | ST Micro | Power Field-Effect Transistor, 6.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 2,040 |
| IRF5210S | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,025 |
| SISA40DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 162A I(D), 20V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,025 |
| BTS247ZE-3062A | Infineon | Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,020 |
| FDMS2672 | Fairchild Semi | Power Field-Effect Transistor, 3.7A I(D), 200V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,002 |
| AOT480L | Alpha Omega | Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| BSP89E6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| BUK95180-100A | Nexperia | Power Field-Effect Transistor, 11A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| BUZ111SE3045 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,000 |
| FDPF16N50T | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FDPF5N50T | Onsemi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FDPF5N60NZ | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FQPF7N10 | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| IPA032N06N3G | Infineon | Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IPB160N04S4-H1 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IPB160N04S4L-H1 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IPB180P04P4L-02 | Infineon | Power Field-Effect Transistor, 180A I(D), 40V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IRF614PBF | Vishay | Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRF630FP | ST Micro | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRFBF20PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRFH5303TR2PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| IRFR310TRPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR3518TRPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR3711TRPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR420ATF | Fairchild Semi | Power Field-Effect Transistor, 2.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| IRFR430ATR | IR | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR430ATRPBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLR3103TRPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLR8259TRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLU024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,000 |
| PHP30NQ15T | Nexperia | Power Field-Effect Transistor, 29A I(D), 150V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| RF1S70N06 | Fairchild Semi | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,000 |
| SI7818DN-T1-E3 | Vishay | Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| SIHF30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| SIHFR9020TR-GE3 | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SPD28N05L | Infineon | Power Field-Effect Transistor, 28A I(D), 55V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| SPP80N03S2L-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| SQD25N06-22L_GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SQD25N15-52_GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 150V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SQD40061EL_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| STF10N60DM2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STF12N50M2 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STF12NM50ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF16N65M2 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF18NM60N | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF28NM50N | ST Micro | Power Field-Effect Transistor, 21A I(D), 500V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF2N80K5 | ST Micro | Power Field-Effect Transistor, 2A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF5N105K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STF5N65M6 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STF7N52DK3 | ST Micro | Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STFU9N65M2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STH6N95K5-2 | ST Micro | Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| STI18N60M2 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| STI6N62K3 | ST Micro | Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,000 |
| STP10NK60Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP11N65M2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STP12N50M2 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STP16NS25 | ST Micro | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP5NK60Z | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP7N52K3 | ST Micro | Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STQ1NK60ZR-AP | ST Micro | Power Field-Effect Transistor, 0.3A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2,000 |
| SUD23N06-31-GE3 | Vishay | Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SUM110P04-05-E3 | Vishay | Power Field-Effect Transistor, 39A I(D), 40V, 0.005ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,000 |
| TK11P65W | Toshiba | Power Field-Effect Transistor, 11.1A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| FCD380N60E | Onsemi | Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,998 |
| BSP89L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,995 |
| STP2N60 | ST Micro | Power Field-Effect Transistor, 2.9A I(D), 600V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,995 |
| BUK482-100A | NXP | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,993 |
| STS7NF60L | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 60V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,990 |
| SUB40N06-25L | Vishay | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,990 |
| BSP295E6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,985 |
| IPB70N10S3L12ATMA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,985 |
| IRL520NSTRLPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,983 |
| IRF5801TRPBF | Infineon | Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA | 1,980 |
| STP5N105K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,980 |
| FDMS86255 | Onsemi | Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 1,977 |
| HUF75307D3S | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,975 |
| IRFU9120PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,975 |
| FDB3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,967 |
| AUIRFR1018E | Infineon | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,950 |
| IRFB61N15DPBF | Infineon | Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,950 |
| IRFP22N60KPBF | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,950 |
| IRFR9N20D | Infineon | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,950 |
| STD35NF3LLT4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 30V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,945 |
| IRFR024NTR | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,935 |
| 2SJ130L-E | Renesas | Power Field-Effect Transistor, 1A I(D), 300V, 8.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,932 |
| MDD3N40RH | Magnachip | Power Field-Effect Transistor | 1,929 |
| SISS27DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 30V, 0.0056ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,918 |
| RFP22N10 | Fairchild Semi | Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,915 |
| NTGS3433T1G | Onsemi | Power Field-Effect Transistor, 2.35A I(D), 12V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,905 |
| AUIRF3808S | Infineon | Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,900 |
| BTS115A | Infineon | Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| FQP2N80 | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| FQPF13N06L | Onsemi | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,900 |
| IRLIZ14GPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHF30N60E-E3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHP6N40D-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHP8N50D-GE3 | Vishay | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| STB100N6F7 | ST Micro | Power Field-Effect Transistor, 100A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,900 |
| STP11NB40 | ST Micro | Power Field-Effect Transistor, 10.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| STP15NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| IRLU8726PBF | IR | Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,885 |
| RJK0654DPB-00-J5 | Renesas | Power Field-Effect Transistor, 30A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,885 |
| NTD3055L104T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,880 |
| SPD10N10 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,870 |
| BUZ101S | Infineon | Power Field-Effect Transistor, 22A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,866 |
| IRF3205ZSTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,865 |
| BSP603S2L | Infineon | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,860 |
| HUF75617D3ST | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,860 |
| HUFA75321S3ST | Fairchild Semi | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,860 |
| IRFR3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,860 |
| NTHS2101PT1G | Onsemi | Power Field-Effect Transistor, 5.4A I(D), 8V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,855 |
| SI4559ADY-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,855 |
| AUIRF1405ZS | Infineon | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,850 |
| IPD09N03LAG | Infineon | Power Field-Effect Transistor, 50A I(D), 25V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,850 |
| STF13N60M2 | ST Micro | Power Field-Effect Transistor | 1,850 |
| IRLR120NTRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,849 |
| BSP170P | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,835 |
| SQ2301ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 3.9A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,835 |
| SQS840EN-T1_GE3 | Vishay | Power Field-Effect Transistor | 1,835 |
| FDS6984S | Fairchild Semi | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,830 |
| IRFH5215TRPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,815 |
| AON6246 | Alpha Omega | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,810 |
| IRFR120NTRPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,810 |
| SUD50N03-07 | Siliconix | Power Field-Effect Transistor, 20A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,810 |
| IRLMS6702TRPBF | Infineon | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,808 |
| AUIRFS3006 | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,800 |
| IRF830ASPBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,800 |
| STF4N62K3 | ST Micro | Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,800 |
| IRF7452PBF | Infineon | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,790 |
| BSP316E6327 | Infineon | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,780 |
| ZVN4424GTA | Diodes | Power Field-Effect Transistor, 0.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,778 |
| IRFR13N20DTRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,770 |
| NTD2955 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,765 |
| STP14NF10 | ST Micro | Power Field-Effect Transistor, 15A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,761 |
| AO4822A | Alpha Omega | Power Field-Effect Transistor, 8A I(D), N-Channel, Metal-oxide Semiconductor FET | 1,760 |
| IRF7811WTR | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,755 |
| FDMS039N08B | Onsemi | Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 1,750 |
| STF10N105K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,750 |
| IRFR1N60APBF | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,749 |
| SI7684DP-T1-E3 | Vishay | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,744 |
| BUK657-400B | NXP | Power Field-Effect Transistor, 11A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,740 |
| FQP4N90C | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,733 |
| AUIRFR2405 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,725 |
| TK4A60DA | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,722 |
| IRFS4321PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,720 |
| IRLML2244TRPBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,720 |
| IRFR1205TRPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,715 |
| IRLR220ATF | Fairchild Semi | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,715 |
| NVMYS5D3N04CTWG | Onsemi | Power Field-Effect Transistor, 71A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,710 |
| AUIRF1010EZS | Infineon | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,700 |
| BUZ71L | Siemens | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,700 |
| HS8K11 | Rohm | Power Field-Effect Transistor | 1,700 |
| IRFI9Z34GPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,700 |
| SP8K1TB | Rohm | Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,700 |
| BUK9880-55A | NXP | Power Field-Effect Transistor, 7A I(D), 55V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,690 |
| IPD50P04P4L-11 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,690 |
| IXTA32N20T | IXYS | Power Field-Effect Transistor, 32A I(D), 200V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,690 |
| NDS9945 | Onsemi | Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,690 |
| VN2450N8-G | Supertex | Power Field-Effect Transistor, 0.25A I(D), 500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 1,690 |
| SI4966DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,685 |
| IRF3711SPBF | IR | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,683 |
| SPB80N06S2L-11 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,677 |
| DMP3130L-7 | Diodes | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,670 |
| IRFL214TRPBF | Vishay | Power Field-Effect Transistor | 1,670 |
| STB23NM60ND | ST Micro | Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,660 |
| PSMN018-80YS | Nexperia | Power Field-Effect Transistor, 45A I(D), 80V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 1,655 |
| 2SK1602 | Toshiba | Power Field-Effect Transistor, 2.8A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| AUIRFU8405 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,650 |
| IRF630SPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| IRFI9530G | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| IRFI9634G | Vishay | Power Field-Effect Transistor, 4.1A I(D), 250V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| IRFS634B | Fairchild Semi | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| IRFS7730TRLPBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,650 |
| STP20N20 | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| RJK0454DPB-00-J5 | Renesas | Power Field-Effect Transistor, 40A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,630 |
| STD1NA60 | ST Micro | Power Field-Effect Transistor, 1.6A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,629 |
| IRFR9024N | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,628 |
| BUK92150-55A | Nexperia | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,625 |
| IRFU110 | Fairchild Semi | Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,625 |
| IRFU3303PBF | IR | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,625 |
| MTD9N10ET4 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,625 |
| IPD053N06N3G | Infineon | Power Field-Effect Transistor, 90A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,615 |
| IRFR4105PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,602 |
| AUIRFS3207Z | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| BTS115 | Siemens | Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| FDD6685 | Onsemi | Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| IRF510STRLPBF | Siliconix | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| IRF9530NSTRLPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFB9N65APBF | Vishay | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| IRFBC40STRLPBF | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH5301TR2PBF | IR | Power Field-Effect Transistor, 35A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH5304TR2PBF | IR | Power Field-Effect Transistor, 22A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH7110TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH7914TR2PBF | IR | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,600 |
| IRFH8330TR2PBF | IR | Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH8334TR2PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFHM830TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRL3705ZSTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| IRLZ44ZSTRRPBF | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| MDD5N50RH | Magnachip | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| NP36P04KDG-E1-AY | Renesas | Power Field-Effect Transistor, 36A I(D), 40V, 0.0235ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| SPD30N06S2L-13 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| STP3NK60Z | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| SUM50P10-42-E3 | Vishay | Power Field-Effect Transistor, 36A I(D), 100V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| 2SJ244JYTL | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,591 |
| 2SK2666 | Shindengen | Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,581 |
| BUK7610-100B | Nexperia | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,580 |
| IRFR210PBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,575 |
| IRFR9120PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,575 |
| NDD05N50Z-1G | Onsemi | Power Field-Effect Transistor, 4.7A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,575 |
| BUK9620-55A | Nexperia | Power Field-Effect Transistor, 54A I(D), 55V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,570 |
| IRF7201PBF | Infineon | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,570 |
| IRF7307TRPBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,558 |
| DMTH4011SPD-13 | Diodes | Power Field-Effect Transistor, 42A I(D), 40V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,555 |
| BUK7614-55 | NXP | Power Field-Effect Transistor, 68A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,550 |
| IRFR9020 | Samsung | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,550 |
| MDD5N40RH | Magnachip | Power Field-Effect Transistor | 1,547 |
| BUK9875-100A | Nexperia | Power Field-Effect Transistor, 7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,545 |
| IRF3205STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,539 |
| IRLL3303TR | IR-HiRel | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 1,535 |
| FDD8444 | Onsemi | Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,530 |
| SI7846DP-T1 | Vishay | Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,530 |
| BSP297H6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,520 |
| IRF7456PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,510 |
| HUF76609D3 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,500 |
| IRF3708SPBF | IR | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,500 |
| IRF510SPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,500 |
| IRFR3704ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,500 |
| PSMN1R7-30YL | Nexperia | Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 1,500 |
| SIHG30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,500 |
| SIHP25N40D-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| STFI15N60M2-EP | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.378ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281 | 1,500 |
| STP8N80K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| STU7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,500 |
| TK40E06N1 | Toshiba | Power Field-Effect Transistor, 60A I(D), 60V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| BTS131E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 1,490 |
| SUD50P04-15-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,490 |
| 2N6764 | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | 1,485 |
| IRFR2905ZTR | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,485 |
| IRLR3715ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,484 |
| AUIRFR2307Z | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,475 |
| HUF76409D3ST | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,475 |
| AUIRF7313Q | IR | Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 1,470 |
| IRF4905STRLPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,470 |
| IPB107N20N3G | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,465 |
| AUIRLU2905 | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| BUK453-60A | NXP | Power Field-Effect Transistor, 22A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| FDP6030BL | Onsemi | Power Field-Effect Transistor, 40A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| FQD13N10TM | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,450 |
| FQPF630 | Onsemi | Power Field-Effect Transistor, 6.3A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| IRF530SPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| IRF9610SPBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| IRFIZ34GPBF | Vishay | Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| IRFP048PBF | Vishay | Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,450 |
| STP65NF06 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| BUZ102SLE3045A | Infineon | Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,445 |
| IRLR3410 | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,427 |
| HUF76107D3ST | Harris | Power Field-Effect Transistor, 20A I(D), 30V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,425 |
| STU13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,425 |
| SPD08P06P | Infineon | Power Field-Effect Transistor, 8.83A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,416 |
| IRFU210 | Siliconix | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,414 |
| IRFR9110 | IR | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,406 |
| RFD16N03L | Harris | Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,405 |
| IRF9333TRPBF | IR | Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,402 |
| BTS115AE3045 | Infineon | Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,400 |
| HUF75332P3 | Onsemi | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| IRF1503SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| IRFI820GPBF | Vishay | Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| RFP45N06 | Fairchild Semi | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| SIHB22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| SIHP22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| STB32N65M5 | ST Micro | Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| FDC6036P | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 20V, 0.044ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,395 |
| IRFR024NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,380 |
| FQP45N15V2 | Onsemi | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,375 |
| SI7601DN-T1-GE3 | Siliconix | Power Field-Effect Transistor, 11.5A I(D), 20V, 0.0192ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,372 |
| IRLMS6802TRPBF | Infineon | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,365 |
| SIR872DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,365 |
| STB18NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,360 |
| BSP317E6327 | Infineon | Power Field-Effect Transistor, 0.37A I(D), 200V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,355 |
| AUIRFR120Z | Infineon | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| AUIRFS4010-7P | Infineon | Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,350 |
| IRF1405ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,350 |
| IRFR320PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| IRLR024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| NTD85N02R | Onsemi | Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,350 |
| STD4NB40 | ST Micro | Power Field-Effect Transistor, 4A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| IRF3709SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,340 |
| IRLML6346TRPBF | Infineon | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,340 |
| SMD30N03-30L | Siliconix | Power Field-Effect Transistor, 6A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,335 |
| IRF7304QPBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,330 |
| IRF7421D1PBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,330 |
| FQB5N50CTM | Onsemi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,325 |
| NTD20P06LT4G | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,320 |
| SPD13N05L | Infineon | Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,315 |
| BUK7508-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,312 |
| STD3NK90ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,304 |
| 2SK3758 | Toshiba | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,300 |
| SMP25N05-45L | Siliconix | Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,300 |
| DMG4468LK3-13 | Diodes | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,290 |
| BSP129L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,285 |
| IRF7421D1TRPBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,285 |
| BST78 | NXP | Power Field-Effect Transistor, 0.75A I(D), 450V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-126 | 1,283 |
| BSP315PH6327 | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,280 |
| STD7NB20T4 | ST Micro | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,279 |
| AUIRFR48Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,275 |
| HUF75829D3S | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,275 |
| IRF6645TR1PBF | IR | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,275 |
| IRLU3717PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,275 |
| IPP80CN10NG | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,266 |
| FQU20N06LTU | Onsemi | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,260 |
| NDS9956A | Fairchild Semi | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,255 |
| IRFZ44V | Infineon | Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,250 |
| MTD3055VL | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,250 |
| 2SK3760 | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,245 |
| BSZ019N03LS | Infineon | Power Field-Effect Transistor, 22A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,245 |
| IRF2903ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,244 |
| BUK9535-55 | NXP | Power Field-Effect Transistor, 34A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,243 |
| SPB20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,241 |
| IRF644S | IR | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,240 |
| STW14NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,240 |
| BUZ10L | Siemens | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,238 |
| IRFS4115TRLPBF | Infineon | Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,235 |
| BUZ71 | Infineon | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,228 |
| SUD45P03-10-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,227 |
| IRFP448PBF | IR | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,225 |
| IRFR2407TRPBF | IR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,223 |
| STP9NK90Z | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,223 |
| SIR401DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 20V, 0.0032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,220 |
| IRFB7446PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,219 |
| IRF8513PBF | IR | Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,215 |
| SUD50N06-07L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,215 |
| BSP125L6433 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,210 |
| IRF7805APBF | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,210 |
| BSC057N08NS3GATMA1 | Infineon | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,205 |
| BTS121A | Infineon | Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,202 |
| AOD4126 | Alpha Omega | Power Field-Effect Transistor, 43A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,200 |
| AUIRFR5505 | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,200 |
| BSP317PH6327 | Infineon | Power Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRFH5255TR2PBF | IR | Power Field-Effect Transistor, 15A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRFR9210PBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,200 |
| IRFU3707ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,200 |
| IRFZ44RPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,200 |
| IRLH5030TR2PBF | IR | Power Field-Effect Transistor, 13A I(D), 100V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRLH6224TR2PBF | IR | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,200 |
| RFP30N06LE | Intersil | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,200 |
| SUD23N06-31L-E3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,200 |
| 2SK4018 | Toshiba | Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,198 |
| IRLU8113PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,198 |
| IRF7404 | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,190 |
| MTB50N06VLT4 | Onsemi | Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,180 |
| DMS3015SSS-13 | Diodes | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,175 |
| IPB026N06N | Infineon | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,164 |
| IRF9Z34NLPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,150 |
| RFP8N20L | Harris | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,150 |
| SI7465DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,150 |
| SPD02N50C3 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,150 |
| ZXMP6A17E6TA | Diodes | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,150 |
| IRLZ44ZPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,149 |
| STP6NB50 | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,148 |
| NTD2955T4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,147 |
| IRF7470PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,140 |
| IRF8707GPBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,140 |
| IRF7204TR | IR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,130 |
| AUIRFR4105Z | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,125 |
| HUFA75309D3S | Fairchild Semi | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,125 |
| IRLU8729PBF | IR | Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,125 |
| STD4NK60Z-1 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,125 |
| NTMFS5C646NLT1G | Onsemi | Power Field-Effect Transistor, 93A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,120 |
| BUZ311 | Infineon | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 1,115 |
| C3M0160120J | Wolfspeed | Power Field-Effect Transistor, 17A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263 | 1,113 |
| SPD31N05 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,110 |
| IRF7402PBF | IR | Power Field-Effect Transistor, 6.8A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,105 |
| STP35NF10 | ST Micro | Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,100 |
| TK7P60W | Toshiba | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,100 |
| ZXMN10A08E6TC | Zetex | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,100 |
| STL130N8F7 | ST Micro | Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,085 |
| IRFB4615PBF | Infineon | Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,081 |
| STW18N60M2 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,080 |
| IRF7341TRPBF | Infineon | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,065 |
| AUIRLS3034 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,060 |
| IRF7401PBF | Infineon | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,059 |
| DMP2305U-7 | Diodes | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,055 |
| AUIRF1010ZS | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,050 |
| AUIRF1404Z | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| AUIRFZ44ZS | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,050 |
| IRF4104PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| IRFR825PBF | Infineon | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,050 |
| IRFU1205PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,050 |
| IRFU3504ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,050 |
| NP20P06SLG-E1-AY | Renesas | Power Field-Effect Transistor, 20A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,050 |
| RFD3055LESM | Fairchild Semi | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,050 |
| STP60NE06L-16 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| STU1HN60K3 | ST Micro | Power Field-Effect Transistor | 1,050 |
| IRLZ34NSTRL | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,045 |
| BUZ72 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,040 |
| ZVN4310GTA | Diodes | Power Field-Effect Transistor, 1.67A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,036 |
| RFD14N05LSM | Onsemi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,028 |
| FQPF18N50V2 | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,025 |
| BTS244Z | Infineon | Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,022 |
| MTD2N50E | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,021 |
| IPC70N04S5L4R2ATMA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 40V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,020 |
| IPB038N12N3G | Infineon | Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| IRF9Z34SPBF | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| STB14NM50N | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| PHW14N50E | NXP | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,015 |
| STW24N60DM2 | ST Micro | Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,014 |
| FQP6N40C | Onsemi | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,010 |
| BUK7K6R2-40E | Nexperia | Power Field-Effect Transistor, 40A I(D), 40V, 0.0058ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,009 |
| BUZ331 | Infineon | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 1,005 |
| 2SK1365(F) | Toshiba | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| 2SK1647STR-E | Renesas | Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| 2SK3563 | Toshiba | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| 2SK3569 | Toshiba | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| AON7458 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT12N60 | Alpha Omega | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT13N50 | Alpha Omega | Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT20N25L | Alpha Omega | Power Field-Effect Transistor, 20A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT284L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT298L | Alpha Omega | Power Field-Effect Transistor, 58A I(D), 100V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT3N100 | Alpha Omega | Power Field-Effect Transistor, 2.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT7N70 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOTF10N65 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOTF11N60L | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF25S65 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF2916L | Alpha Omega | Power Field-Effect Transistor, 17A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF9N70 | Alpha Omega | Power Field-Effect Transistor, 9A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOW11S60 | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOW14N50 | Alpha Omega | Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOW7S60 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| AUIRF7207Q | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,000 |
| BSP170PL6327 | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BSP171E6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BSP296NH6327 | Infineon | Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUK483-60A | NXP | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUZ100SE3045A | Infineon | Power Field-Effect Transistor, 77A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| BUZ41A | NJ Semi | Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUZ77B | Infineon | Power Field-Effect Transistor, 2.9A I(D), 600V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FCPF13N60NT | Onsemi | Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FCPF600N60Z | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| FDPF10N50UT | Onsemi | Power Field-Effect Transistor, 8A I(D), 500V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FDPF15N65 | Onsemi | Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FDPF390N15A | Onsemi | Power Field-Effect Transistor, 15A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| IPB60R190C6 | Infineon | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IPB80N08S2-07 | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IRF644SPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IRF6610TR1PBF | IR | Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6665TR1PBF | IR | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6709S2TR1PBF | IR | Power Field-Effect Transistor, 12A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6712STR1PBF | IR | Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6713STR1PBF | IR | Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6714MTR1PBF | IR | Power Field-Effect Transistor, 166A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6717MTR1PBF | Infineon | Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6721STR1PBF | IR | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6728MTR1PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6775MTR1PBF | Infineon | Power Field-Effect Transistor | 1,000 |
| IRF6795MTR1PBF | Infineon | Power Field-Effect Transistor, 32A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6810STR1PBF | IR | Power Field-Effect Transistor, 16A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6811STR1PBF | IR | Power Field-Effect Transistor, 19A I(D), 25V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6893MTR1PBF | IR | Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6894MTR1PBF | IR | Power Field-Effect Transistor, 33A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8302MTR1PBF | IR | Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8304MTR1PBF | IR | Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8306MTR1PBF | IR | Power Field-Effect Transistor | 1,000 |
| IRF8308MTR1PBF | IR | Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRFB13N50APBF | Siliconix | Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| IRFP150MPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,000 |
| IRFS730B | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| RFP12P08 | Intersil | Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SFP9634 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA2N80E-GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 800V, 2.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA30N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHB22N60AE-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHB22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHB30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHF12N60E-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHF15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHF22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP14N60E-GE3 | Vishay | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP15N65E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIS110DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.2A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| SPB03N60S5E3045 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SPB08P06P | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB12NK80ZT4 | ST Micro | Power Field-Effect Transistor, 10.5A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STB14NK60ZT4 | ST Micro | Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STB18N60M6 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB | 1,000 |
| STB33N60DM6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB36N60M6 | ST Micro | Power Field-Effect Transistor, 30A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB6N60M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STB70NF3LLT4 | ST Micro | Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB95N4F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| STB9NK50ZT4 | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STF100N10F7 | ST Micro | Power Field-Effect Transistor, 32A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF10N62K3 | ST Micro | Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF10N80K5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| STF110N10F7 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF11NM50N | ST Micro | Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF13N60DM2 | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF15NM65N | ST Micro | Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF18N60DM2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF20N65M5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF22NM60N | ST Micro | Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF24N60M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF28NM60ND | ST Micro | Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF38N65M5 | ST Micro | Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF45N10F7 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF4N90K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 900V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF6N62K3 | ST Micro | Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF6N90K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STFU10N80K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STFU16N65M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STI20N65M5 | ST Micro | Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| STI24NM60N | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| STI6N90K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP10LN80K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP18N60DM2 | ST Micro | Power Field-Effect Transistor, 12A I(D), 600V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP18NM60N | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP200NF03 | ST Micro | Power Field-Effect Transistor, 120A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP24N65M2 | ST Micro | Power Field-Effect Transistor, 16A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP4N90K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP6N60M2 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP6N65M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP9N80K5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP9NK70Z | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SUA70060E-E3 | Vishay | Power Field-Effect Transistor | 1,000 |
| SUD19P06-60-GE3 | Vishay | Power Field-Effect Transistor, 18.3A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,000 |
| SUM85N15-19-E3 | Vishay | Power Field-Effect Transistor, 85A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SUP10250E-GE3 | Vishay | Power Field-Effect Transistor, 63A I(D), 250V, 0.0325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| ZXMN6A11GTA | Diodes | Power Field-Effect Transistor, 4.4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| AON7210 | Alpha Omega | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 999 |
| IRF2807STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 998 |
| 2SJ314-01S | Fuji Elec | Power Field-Effect Transistor, 5A I(D), 60V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 995 |
| STB22N60M6 | ST Micro | Power Field-Effect Transistor | 991 |
| 2SK1930 | Toshiba | Power Field-Effect Transistor, 4A I(D), 1000V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| BSP320SH6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| IRF1404ZSPBF | Infineon | Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 990 |
| SI7882DP-T1-E3 | Vishay | Power Field-Effect Transistor, 13A I(D), 12V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| STW19NM50N | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 990 |
| ZXMP7A17GTA | Diodes | Power Field-Effect Transistor, 3.7A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 990 |
| IRFR2407 | IR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 985 |
| IRLR3110ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 985 |
| NDS9435 | National | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 985 |
| ZXMP10A17GTA | Diodes | Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 983 |
| BSP105 | NXP | Power Field-Effect Transistor, 0.5A I(D), 60V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| FDS4470 | Onsemi | Power Field-Effect Transistor, 12.5A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| IPB80R290C3A | Infineon | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 980 |
| IRF7665S2TR1PBF | IR | Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| IRFR3303PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 975 |
| MTD15N06VLT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 975 |
| RFD4N06L | Harris | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 975 |
| IXTN600N04T2 | IXYS | Power Field-Effect Transistor, 600A I(D), 40V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 967 |
| MTP12P10 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 967 |
| IPD90N04S4-03 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 965 |
| SVD2955T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 965 |
| BUZ80 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 964 |
| TPCS8208(TE12L) | Toshiba | Power Field-Effect Transistor, 6A I(D), N-Channel, Metal-oxide Semiconductor FET | 960 |
| ZXMP7A17KTC | Diodes | Power Field-Effect Transistor, 3.8A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 960 |
| PSMNR90-80ASFJ | Nexperia | Power Field-Effect Transistor, 505A I(D), 80V, 0.00122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-359 | 956 |
| AOT2916L | Alpha Omega | Power Field-Effect Transistor, 23A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| BSP171 | Siemens | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| BUK7515-100A | Nexperia | Power Field-Effect Transistor | 950 |
| FDP10N60ZU | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| FDP7030BL | Onsemi | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF520N | IR-HiRel | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF7809AVTR | IR-HiRel | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 950 |
| IRF9Z24SPBF | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| IRFB20N50K | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRFR024 | Siliconix | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 950 |
| IRFS4510PBF | Infineon | Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 950 |
| MTB36N06V | Onsemi | Power Field-Effect Transistor, 32A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| SI4420DYPBF | Infineon | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA | 950 |
| SI4814BDY-E3 | Siliconix | Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| SIHF540S-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 950 |
| SPD18P06P | Infineon | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 950 |
| STF18N60M6 | ST Micro | Power Field-Effect Transistor | 950 |
| STF24N60M6 | ST Micro | Power Field-Effect Transistor | 950 |
| STF35N65DM2 | ST Micro | Power Field-Effect Transistor, 32A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STF3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP45N60DM6 | ST Micro | Power Field-Effect Transistor, 30A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP4NB50FP | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP9NK60ZFP | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP9NM60N | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| TK58A06N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 60V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF7413PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 941 |
| FDD5690 | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 940 |
| IRF8010STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 940 |
| IRFF320 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 940 |
| STB19NF20 | ST Micro | Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 940 |
| FDMC8010 | Onsemi | Power Field-Effect Transistor, 30A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 933 |
| BSP129E6327 | Infineon | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 930 |
| STP13NM60ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 930 |
| STY112N65M5 | ST Micro | Power Field-Effect Transistor, 93A I(D), 650V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 930 |
| FQB47P06TM_AM002 | Fairchild Semi | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 928 |
| IRF7342D2TRPBF | Infineon | Power Field-Effect Transistor, 3.4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 927 |
| ZXMN10A11GTA | Diodes | Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 926 |
| IRFPC50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 925 |
| STS4DNFS30L | ST Micro | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 925 |
| IRFP150A | Samsung | Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 923 |
| SI7617DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 13.9A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 920 |
| STF13NM60ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 920 |
| IRF5305SPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 917 |
| AOT240L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 915 |
| STB10NK60ZT4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 915 |
| BUZ349 | Infineon | Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 913 |
| 2SJ542-E | Renesas | Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 911 |
| IRLR8113PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 910 |
| AUIRFU8403 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 900 |
| IRF5305LPBF | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 900 |
| IRF720PBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFB7540PBF | Infineon | Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFI9634GPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 250V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFIB6N60A | Vishay | Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFR1N60A | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 900 |
| IRFS720B | Fairchild Semi | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 900 |
| IRFS7734PBF | Infineon | Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| IRFU4104PBF | IR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| IRL520NLPBF | IR | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 900 |
| IRLU7821PBF | IR | Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| SIHB15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| SIHB25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| SIHFR1N60A | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 900 |
| SIHG22N50D-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 900 |
| SIHP12N50C-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP5N50D-GE3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STD4NK80Z-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| STF21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STF32NM50N | ST Micro | Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STF8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STFW2N105K5 | ST Micro | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 900 |
| STP34NM60N | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP6N80K5 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 800V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP7NK40ZFP | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP9NK60Z | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRF6644TRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 895 |
| SUD50N06-09L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 895 |
| IRL3303LPBF | IR | Power Field-Effect Transistor, 38A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 890 |
| TPCA8106(TE12L,Q) | Toshiba | Power Field-Effect Transistor | 890 |
| ZXMN7A11GTA | Diodes | Power Field-Effect Transistor, 3.8A I(D), 70V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 886 |
| SUD50N04-8M8P-4GE3 | Vishay | Power Field-Effect Transistor, 14A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 885 |
| ZVN4306GVTA | Diodes | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 881 |
| IRLR110 | IR | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 875 |
| SMD25N05-45L | Siliconix | Power Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 875 |
| TK7P50D(T6RSS-Q) | Toshiba | Power Field-Effect Transistor | 870 |
| ZXMP6A17GTA | Diodes | Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 861 |
| IRFML8244TRPBF | Infineon | Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 860 |
| IRF6715MTRPBF | Infineon | Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 855 |
| AUIRFZ48ZS | Infineon | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 850 |
| FDT457N | Onsemi | Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| FQP5N40 | Fairchild Semi | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| IRFI510GPBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| IRFR220NTRLPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 850 |
| IRL3715ZSPBF | IR | Power Field-Effect Transistor, 50A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| IRL3803SPBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| IRLZ44ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 850 |
| MMF60R290PTH | Magnachip | Power Field-Effect Transistor | 850 |
| STF42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| FQP19N20C | Onsemi | Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 849 |
| IPD30N06S2L-23 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 849 |
| IRF6715MTR1PBF | IR | Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 845 |
| SPB47N10L | Infineon | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 845 |
| HUF76143S3S | Harris | Power Field-Effect Transistor, 75A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 841 |
| STB55NF06T4 | ST Micro | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 840 |
| IRFR3910 | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 839 |
| IRF9321TRPBF | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 835 |
| PSMN025-100D | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 835 |
| STB28N60DM2 | ST Micro | Power Field-Effect Transistor | 830 |
| AUIRLR024Z | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 825 |
| AUIRLU024Z | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRFU120ZPBF | IR | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRFU3704ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRL540NSTRRPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 825 |
| IRLR8203PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 825 |
| SISA96DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 825 |
| STD2NA60 | ST Micro | Power Field-Effect Transistor, 2.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 825 |
| AUIRF7640S2TR | Infineon | Power Field-Effect Transistor, 5.8A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 814 |
| NIF9N05CLT1G | Onsemi | Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 810 |
| 2SK1669 | Renesas | Power Field-Effect Transistor, 30A I(D), 250V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 809 |
| ZVNL120GTA | Diodes | Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 804 |
| 2SK3767(Q) | Toshiba | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AOB280L | Alpha Omega | Power Field-Effect Transistor, 140A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AOB284L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AOT10N60 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AUIRF4104S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| AUIRFS3207ZTRL | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AUIRFS4310ZTRL | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AUIRFZ48Z | Infineon | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| BUK7109-75AIE | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FCB20N60FTM | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FCP9N60N | Onsemi | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| FDB016N04AL7 | Onsemi | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FDB8447L | Onsemi | Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FDP8870 | Onsemi | Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| FQB4N80TM | Onsemi | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB50N06TM | Onsemi | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB58N08TM | Fairchild Semi | Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB6N90TM | Fairchild Semi | Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB7P20TM | Onsemi | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IPA70R450P7S | Infineon | Power Field-Effect Transistor, 700V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| IRC634PBF | Vishay | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF520VSPBF | IR | Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF630STRLPBF | IR | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF634STRRPBF | Vishay | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF644NSTRLPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF644STRRPBF | IR | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF6613TR1PBF | IR | Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF710STRLPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF720SPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF9530STRRPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF9640STRL | Vishay | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRFB31N20D | IR | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| IRFBC30STRLPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFBF30STRLPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRFH5204TR2PBF | IR | Power Field-Effect Transistor, 22A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFH5220TR2PBF | IR | Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFH8318TR2PBF | IR | Power Field-Effect Transistor, 27A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM830DTR2PBF | IR | Power Field-Effect Transistor, 20A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM831TR2PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM8363TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFR224PBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 800 |
| IRFS4010TRL7PP | Infineon | Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| IRFS4321TRL7PP | Infineon | Power Field-Effect Transistor, 86A I(D), 150V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFS7540TRLPBF | Infineon | Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL2910STRLPBF | Infineon | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRL530STRRPBF | Vishay | Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL540SPBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL630STRLPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRLH7134TR2PBF | IR | Power Field-Effect Transistor, 134A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| IRLS3813TRLPBF | Infineon | Power Field-Effect Transistor | 800 |
| IRLZ44STRRPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| MDP15N60GTH | Magnachip | Power Field-Effect Transistor | 800 |
| MTB30P06VT4 | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| PSMN008-75B | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| SGSP367 | ST Micro | Power Field-Effect Transistor, 12A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| SIHB12N60ET5-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM100N04-2M7_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM100N10-10_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM200N04-1M1L_GE3 | Vishay | Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| STF21NM60ND | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| SUM70040E-GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SUM70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| VNB28N04TR-E | ST Micro | Power Field-Effect Transistor, 28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| ZVN0545GTA | Zetex | Power Field-Effect Transistor, 0.14A I(D), 450V, 50ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| 2SK1768 | Toshiba | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 799 |
| BTS100E3045A | Infineon | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 798 |
| NTP6410ANG | Onsemi | Power Field-Effect Transistor, 76A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 798 |
| NDB610A | Fairchild Semi | Power Field-Effect Transistor, 26A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 797 |
| FDB3860 | Fairchild Semi | Power Field-Effect Transistor, 6.4A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 795 |
| PHB66NQ03LT | Nexperia | Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 795 |
| RFD16N05SM | Harris | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 795 |
| STP16N65M2 | ST Micro | Power Field-Effect Transistor | 795 |
| AUIRFS8409TRL | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 790 |
| IXTY01N100 | Littelfuse | Power Field-Effect Transistor, 0.1A I(D), 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 790 |
| IRFU110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 788 |
| PHP6N50E | NXP | Power Field-Effect Transistor, 5.9A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 785 |
| HUF76131SK8 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 784 |
| PHP45N03LT | NXP | Power Field-Effect Transistor, 45A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 782 |
| IRF7832ZPBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 774 |
| SI4965DY-T1 | Vishay | Power Field-Effect Transistor, 8A I(D), 8V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 771 |
| STB6NK90ZT4 | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 770 |
| RFP15N05L | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 50V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 765 |
| IRF7379PBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 760 |
| IRF7902PBF | IR | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0144ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 760 |
| HUF76432S3ST | Fairchild Semi | Power Field-Effect Transistor, 59A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 754 |
| 2SK3759 | Toshiba | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| AUIRFR1010Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 750 |
| AUIRFR540Z | Infineon | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| AUIRFU3607 | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| AUIRFU4292 | Infineon | Power Field-Effect Transistor, 9.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| FCU900N60Z | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| FDMS86200DC | Onsemi | Power Field-Effect Transistor, 9.3A I(D), 150V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 750 |
| FDP070AN06A0 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| FDPF18N50 | Onsemi | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| HUF76419D3S | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 750 |
| IPG20N06S3L-35 | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| IRF3704SPBF | IR | Power Field-Effect Transistor, 75A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| IRFIB8N50K | Vishay | Power Field-Effect Transistor, 6.7A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| IRFIBC40GPBF | Vishay | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| IRLU7843PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| MDF16N50GTH | Magnachip | Power Field-Effect Transistor, 16A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| SIHP10N40D-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| SPU31N05 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| STF35N60DM2 | ST Micro | Power Field-Effect Transistor, 28A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| STF36N60M6 | ST Micro | Power Field-Effect Transistor | 750 |
| STF5NK100Z | ST Micro | Power Field-Effect Transistor | 750 |
| IRFBC40 | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 747 |
| IRFZ24NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 746 |
| BUK564-60H | NXP | Power Field-Effect Transistor, 39A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 745 |
| SI4466DY-T1 | Vishay | Power Field-Effect Transistor, 9.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 745 |
| IRF3315SPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 740 |
| IRF3704ZSPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 20V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 740 |
| IRFR9024NTRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 740 |
| SI4856DY-T1 | Vishay | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 735 |
| IRFBF20SPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 730 |
| BTS282ZE-3180A | Infineon | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 723 |
| BUK454-200A | NXP | Power Field-Effect Transistor, 9.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 723 |
| IRF9Z34NSTRRPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 721 |
| STW21NM60ND | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 720 |
| BSP300L6327 | Infineon | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 716 |
| FDMC86320 | Onsemi | Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 715 |
| BSP17E6327 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 710 |
| IPP100N06S2L-05 | Infineon | Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 706 |
| BSP89H6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 705 |
| ISP12DP06NM | Infineon | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 705 |
| IXFT40N30Q | IXYS | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268 | 702 |
| 2SJ239 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 700 |
| AUIRF2804S-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 700 |
| AUIRFB4610 | Infineon | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| AUIRFS3004-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 700 |
| AUIRL3705Z | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| FDB6021P | Fairchild Semi | Power Field-Effect Transistor, 28A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 700 |
| FQPF13N50C | Onsemi | Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRF3711PBF | Infineon | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRF6802SDTR1PBF | IR | Power Field-Effect Transistor, 57A I(D), N-Channel, Metal-oxide Semiconductor FET | 700 |
| IRF9530N | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRFB23N15DPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRFPC60PBF | Vishay | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 700 |
| IRFZ44R | Siliconix | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRL2703SPBF | IR | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 700 |
| SIHF22N60E-E3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| STF24N65M2 | ST Micro | Power Field-Effect Transistor, 16A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| STP34NM60ND | ST Micro | Power Field-Effect Transistor | 700 |
| IRFP254 | Vishay | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 699 |
| IRF5210STRLPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 695 |
| BSC060N10NS3G | Infineon | Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 693 |
| RFD16N05LSM | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 690 |
| IRF540NPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 686 |
| FQP7P06 | Onsemi | Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 684 |
| IRL3803STRLPBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 680 |
| STY60NM60 | ST Micro | Power Field-Effect Transistor, 60A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 680 |
| AUIRFR3504Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| HUF76407D3S | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| IRFPS43N50KPBF | Vishay | Power Field-Effect Transistor, 47A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 675 |
| IRFR420ATRPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| SPD50N03S2-07 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 675 |
| NTD2955T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 674 |
| AUIRFR3504 | Infineon | Power Field-Effect Transistor, 56A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 670 |
| HUF75332S3ST | Intersil | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 670 |
| IRFS3607PBF | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 670 |
| HUF75329S3ST | Fairchild Semi | Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 667 |
| IRF7404QPBF | IR | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 665 |
| IRF7451PBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA | 665 |
| IRFBA1404PPBF | Infineon | Power Field-Effect Transistor, 95A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA | 661 |
| STWA48N60DM2 | ST Micro | Power Field-Effect Transistor | 660 |
| FDD16AN08A0 | Onsemi | Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 659 |
| SI7949DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 658 |
| BSC240N12NS3G | Infineon | Power Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 655 |
| AUIRFSL8407 | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 650 |
| AUIRL3705ZL | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 650 |
| FQP34N20 | Onsemi | Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| FQPF27N25 | Onsemi | Power Field-Effect Transistor, 14A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| HUF75321P3 | Onsemi | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRF135S203 | Infineon | Power Field-Effect Transistor | 650 |
| IRF9630STRR | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 650 |
| IRFI740GLCPBF | Vishay | Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRFL4105TR | IR-HiRel | Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 650 |
| MDP11N60TH | Magnachip | Power Field-Effect Transistor | 650 |
| MDP1933TH | Magnachip | Power Field-Effect Transistor | 650 |
| MMF60R750PTH | Magnachip | Power Field-Effect Transistor | 650 |
| NTMFD5C466NT1G | Onsemi | Power Field-Effect Transistor, 14A I(D), 40V, 0.0081ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| PSMN004-60B | Nexperia | Power Field-Effect Transistor, 75A I(D), 60V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| SIHB33N60E-E3 | Vishay | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 650 |
| STP11NM60A | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| STP32NM50N | ST Micro | Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| STP80NF55-06FP | ST Micro | Power Field-Effect Transistor, 60A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| SUP85N10-10P-E3 | Vishay | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 650 |
| TK35A08N1 | Toshiba | Power Field-Effect Transistor, 55A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRL510PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 642 |
| BSO301SP | Infineon | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 635 |
| BUZ42 | Infineon | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 635 |
| IRF1310NSTRL | IR | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 620 |
| IRF630NS | Infineon | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 620 |
| IRFB4410ZPBF | IR | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 617 |
| SI5424DC-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 615 |
| ZVP2106GTA | Diodes | Power Field-Effect Transistor, 0.45A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 614 |
| IRF7822TRPBF | IR | Power Field-Effect Transistor, 18A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 610 |
| 2SK4013 | Toshiba | Power Field-Effect Transistor, 6A I(D), 800V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRF1010Z | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| AUIRF1324S-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRF1405 | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| AUIRF3710ZS | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRFR4105 | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 600 |
| AUIRFU4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 600 |
| BSP373E6327 | Siemens | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| FCP190N60 | Onsemi | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| FQPF19N10 | Onsemi | Power Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IPA60R385CP | Infineon | Power Field-Effect Transistor, 9A I(D), 650V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| IRF1324SPBF | IR | Power Field-Effect Transistor, 195A I(D), 24V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRF2903ZPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| IRF3711S | IR-HiRel | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IRFS254B | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IRFS3507PBF | IR | Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRFS7787TRLPBF | Infineon | Power Field-Effect Transistor, 76A I(D), 75V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRFU3910PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 600 |
| MDP10N60GTH | Magnachip | Power Field-Effect Transistor | 600 |
| NDP7060 | Onsemi | Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| NP80N04MHE-S18-AY | Renesas | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| NTD20N06T4G | Onsemi | Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| SIHG22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 600 |
| SIHP17N60D-E3 | Vishay | Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| SIHP7N60E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STD2NB25-1 | ST Micro | Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 600 |
| STF33N60DM6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STP6NK60ZFP | ST Micro | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STW15NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW24N60M6 | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 600 |
| STW25N60M2-EP | ST Micro | Power Field-Effect Transistor | 600 |
| STW27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW40N60M2 | ST Micro | Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW72N60DM2AG | ST Micro | Power Field-Effect Transistor, 66A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STWA20N95K5 | ST Micro | Power Field-Effect Transistor | 600 |
| TK30A06N1 | Toshiba | Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| FDS5672 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 598 |
| IRFU024N | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 596 |
| STW26N60M2 | ST Micro | Power Field-Effect Transistor | 595 |
| IRLR3714PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 592 |
| BSP297E6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| BSP320SL6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| IPD50P03P4L-11 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 590 |
| IRFB4228PBF | Infineon | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 590 |
| IRFH5300TR2PBF | IR | Power Field-Effect Transistor, 40A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| STV40N10 | ST Micro | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 590 |
| IRFR6215TRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 585 |
| IRFS3006TRL7PP | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 585 |
| SPB20N60S5 | Siemens | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 585 |
| STL40N75LF3 | ST Micro | Power Field-Effect Transistor, 40A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 585 |
| IRLR2703PBF | Infineon | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 580 |
| MMDF2C01HDR1 | Motorola | Power Field-Effect Transistor, 2A I(D), 12V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 580 |
| SPU01N60S5 | Infineon | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 580 |
| IRF4905PBF | Infineon | Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 579 |
| 2SK2221 | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 578 |
| IRF3704ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 20V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 575 |
| IRL3803S | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 575 |
| NTB25P06T4G | Onsemi | Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 575 |
| SPN04N60S5 | Infineon | Power Field-Effect Transistor, 0.8A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 575 |
| IRF7311PBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| IRF7313QPBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| IRF7322D1PBF | IR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| STW33N60M6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 570 |
| STWA48N60M2 | ST Micro | Power Field-Effect Transistor | 570 |
| IRF7103TRPBF | Infineon | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 565 |
| IRF7862PBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 565 |
| SI7846DP-T1-E3 | Vishay | Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 565 |
| TN5325K1-G | Microchip | Power Field-Effect Transistor, 0.15A I(D), 250V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 565 |
| AUIRLL024N | IR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 560 |
| STD2NB80T4 | ST Micro | Power Field-Effect Transistor, 1.9A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 560 |
| TN2504N8 | Supertex | Power Field-Effect Transistor, 0.89A I(D), 40V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 555 |
| FQP46N15 | Onsemi | Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRF610SPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 550 |
| IRF7341PBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 550 |
| IRF9540NSPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 550 |
| IRFHM792TR2PBF | IR | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 550 |
| IRFI840GPBF | Vishay | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRFS7437-7PPBF | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 550 |
| STF33N60M2 | ST Micro | Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| STP16N65M5 | ST Micro | Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| STP17NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRF840SPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 549 |
| BSZ068N06NS | Infineon | Power Field-Effect Transistor, 63A I(D), 60V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 545 |
| 2SK2225-80-E#T2 | Renesas | Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 540 |
| HUFA75332S3ST | Fairchild Semi | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 540 |
| IRF7465TRPBF | Infineon | Power Field-Effect Transistor, 1.9A I(D), 150V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 540 |
| STW15NM60ND | ST Micro | Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 540 |
| STW48N60M2-4 | ST Micro | Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 540 |
| TK30E06N1 | Toshiba | Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 540 |
| IRFR3518PBF | Infineon | Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 538 |
| BSP373L6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 535 |
| NTR4501NT1G | Onsemi | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 526 |
| FDS4953 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 525 |
| IRFR4105ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 525 |
| IRFU3505PBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| IRFU4105PBF | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| IRLU7833PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| STU85N3LH5 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 525 |
| IRFR2307ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 524 |
| IRFR5505 | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 522 |
| IRFU9214 | Siliconix | Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 520 |
| AUIRLR2908 | Infineon | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 517 |
| SI4850EY-T1 | Vishay | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 515 |
| SPN03N60S5 | Infineon | Power Field-Effect Transistor, 0.7A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 515 |
| STB16NS25T4 | ST Micro | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 515 |
| NTD3055L104G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 512 |
| RJK1055DPB-00-J5 | Renesas | Power Field-Effect Transistor, 23A I(D), 100V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 512 |
| AUIRFR024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 505 |
| 2SK2649-01R | Fuji Elec | Power Field-Effect Transistor, 9A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| AUIRF3808 | Infineon | Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| AUIRFB3207 | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| AUIRFB8405 | Infineon | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFBA1405 | Infineon | Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFI3205 | Infineon | Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFI4905 | Infineon | Power Field-Effect Transistor, 39A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| AUIRFIZ34N | Infineon | Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFS8403 | Infineon | Power Field-Effect Transistor, 123A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFSL4010 | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| AUIRFSL4310 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| AUIRFZ46NL | Infineon | Power Field-Effect Transistor, 39A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| BTS412A | Siemens | Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| FQPF7N65C | Onsemi | Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPA50R190CE | Infineon | Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPA65R400CE | Infineon | Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPB60R280C6 | Infineon | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IPD220N06L3G | Infineon | Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| IPI80N04S4-03 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| IRF3709ZSPBF | IR | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| IRF624SPBF | Vishay | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRF830PBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFB4610PBF | IR | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFB9N60A | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFI634GPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFI830GPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFIBC20GPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFIBE30G | Vishay | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFPF30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| IRFS7437PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRL2703PBF | Infineon | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRL2703S | IR | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRL510SPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRLR3636TRPBF | IR | Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| IRLZ34 | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRLZ44ZL | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| NP24N06HLB | Renesas | Power Field-Effect Transistor, 24A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB | 500 |
| NVMFS5C450NLWFT1G | Onsemi | Power Field-Effect Transistor, 110A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| PHX18NQ20T | NXP | Power Field-Effect Transistor, 8.2A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| SI4880DY | Siliconix | Power Field-Effect Transistor, 13A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| SIHD5N50D-E3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| SIHF18N50D-E3 | Vishay | Power Field-Effect Transistor, 18A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SIHG15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG17N60D-GE3 | Vishay | Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG25N40D-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG30N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG33N65E-GE3 | Vishay | Power Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG460B-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG47N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG73N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 69A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG73N60E-GE3 | Vishay | Power Field-Effect Transistor, 73A I(D), 600V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHP12N60E-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SPP03N60C3 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SQP100P06-9M3L_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 60V, 0.0093ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STF16N60M2 | ST Micro | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| STF22N60DM6 | ST Micro | Power Field-Effect Transistor | 500 |
| STF8N65M5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STP10NK70ZFP | ST Micro | Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STP16NF06FP | ST Micro | Power Field-Effect Transistor, 11A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP40010EL-GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP50N10-21P-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| TK22A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| TK46A08N1,S4X(S | Toshiba | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| TK6A60W,S4VX | Toshiba | Power Field-Effect Transistor | 500 |
| IPP055N03LG | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 497 |
| IRL540NPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 496 |
| ZXM64P035L3 | Diodes | Power Field-Effect Transistor, 12A I(D), 35V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 496 |
| HUF75531SK8T | Fairchild Semi | Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 495 |
| IRF6725MTR1PBF | Infineon | Power Field-Effect Transistor, 170A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 495 |
| STF12N65M5 | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 495 |
| ZVP0545GTA | Diodes | Power Field-Effect Transistor, 0.075A I(D), 450V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 495 |
| HP4410DY | Harris | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 490 |
| IRF7424PBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 488 |
| IRLU8743PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 485 |
| SPP08P06P | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 485 |
| IPB054N08N3G | Infineon | Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 482 |
| BUK9629-100B | Philips Semi | Power Field-Effect Transistor, 46A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 481 |
| IRF2907ZLPBF | IR | Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 481 |
| FDAF59N30 | Fairchild Semi | Power Field-Effect Transistor, 34A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 480 |
| IRC840 | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 480 |
| STW24NM60N | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| STW6N90K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| TK39N60W | Toshiba | Power Field-Effect Transistor, 38.8A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| AUIRF7316Q | Infineon | Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| BSZ063N04LS6ATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| BUZ307 | Infineon | Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 475 |
| IRF3415S | Infineon | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| IRF7303PBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7319PBF | Infineon | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7905PBF | IR | Power Field-Effect Transistor, 8.9A I(D), 30V, 0.0171ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| IRF9956 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7854PBF | IR | Power Field-Effect Transistor, 10A I(D), 80V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 471 |
| STP23NM50N | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 471 |
| BUZ100SLE3045A | Infineon | Power Field-Effect Transistor, 70A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 470 |
| BUZ32-E3045 | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 470 |
| FDB2552 | Onsemi | Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 470 |
| BUK453-60B | NXP | Power Field-Effect Transistor, 20A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 469 |
| IRF7301PBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 469 |
| BSP88L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 465 |
| BUZ171 | Siemens | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 465 |
| IPB60R385CP | Infineon | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 465 |
| IRF1010NSTRLPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 465 |
| STP28N60M2 | ST Micro | Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 465 |
| IRFR3706PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 463 |
| ZXMN6A25GTA | Diodes | Power Field-Effect Transistor, 4.8A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 463 |
| 2SK1167-E | Renesas | Power Field-Effect Transistor, 15A I(D), 450V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 460 |
| BSP129H6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 455 |
| SI7858ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 12V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 455 |
| AUIRF1010ZL | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 450 |
| AUIRF3710Z | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| AUIRFR8403 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRFS8405 | Infineon | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRFU540Z | Infineon | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRL1404Z | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| AUIRLR2703 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| AUIRLR3915 | Infineon | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRLU3110Z | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 450 |
| BUZ72L | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| FCA36N60NF | Onsemi | Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FDA18N50 | Onsemi | Power Field-Effect Transistor, 19A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FDA20N50F | Onsemi | Power Field-Effect Transistor, 22A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQA40N25 | Onsemi | Power Field-Effect Transistor, 40A I(D), 250V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQA6N70 | Fairchild Semi | Power Field-Effect Transistor, 6.4A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQP5N50C | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRFB11N50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRFBC40SPBF | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| IRFP27N60KPBF | Vishay | Power Field-Effect Transistor, 27A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 450 |
| IRFR3708PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| IRFR4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| IRFS7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| IRFSL4020PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 450 |
| IRFZ34EPBF | IR | Power Field-Effect Transistor, 28A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRL540 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRLD024PBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| IRLZ24PBF | Vishay | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| PSMN005-75P | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| RFP8N18L | Harris | Power Field-Effect Transistor, 8A I(D), 180V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| SCT2H12NZGC11 | Rohm | Power Field-Effect Transistor, 3.7A I(D), 1700V, 1.5ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 450 |
| STD3NM60-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 450 |
| STF10N65K3 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STF21NM50N | ST Micro | Power Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STF26NM60N | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STP36NF06L | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STW7NK90Z | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 450 |
| STY80NM60N | ST Micro | Power Field-Effect Transistor, 80A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| TK7A60W | Toshiba | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| FQP17P10 | Onsemi | Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 447 |
| BUK9624-55 | NXP | Power Field-Effect Transistor, 45A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 446 |
| IRFI540GPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 446 |
| IRFI1010NPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 445 |
| SPD02N60C3 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 445 |
| SI9955DY | Siliconix | Power Field-Effect Transistor, 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 443 |
| BUK445-600B | NXP | Power Field-Effect Transistor, 2.2A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 442 |
| 2SK2220-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| AUIRFR5410 | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 440 |
| IRF7530PBF | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| SI7790DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| STB6NC90ZT4 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| STW45N65M5 | ST Micro | Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 440 |
| IXTH500N04T2 | Littelfuse | Power Field-Effect Transistor, 500A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 438 |
| SUB75P05-08 | Siliconix | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 438 |
| HUF75639P3 | Onsemi | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 433 |
| IXFN64N50P | Littelfuse | Power Field-Effect Transistor, 61A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 431 |
| IRF9540NPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 430 |
| NDT3055L | Onsemi | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| NVMFS5C612NLWFAFT1G | Onsemi | Power Field-Effect Transistor, 250A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| ZVNL110GTA | Diodes | Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| FDS8958A_F085 | Fairchild Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 429 |
| SIHG47N60E-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 425 |
| IRF740PBF | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 422 |
| FDA70N20 | Onsemi | Power Field-Effect Transistor, 70A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 420 |
| HUF76139S3ST | Fairchild Semi | Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 420 |
| NDB505AE | National | Power Field-Effect Transistor, 26A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 415 |
| BUZ341 | Infineon | Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 411 |
| IRF9395MTR1PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.007ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 407 |
| CSD16323Q3 | TI | Power Field-Effect Transistor, 21A I(D), 25V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 406 |
| IRF3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 405 |
| IRFP22N50APBF | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 402 |
| 2SK2173 | Toshiba | Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| AUIRF3805L-7P | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| AUIRLI2505 | Infineon | Power Field-Effect Transistor, 58A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| FCP260N60E | Onsemi | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 400 |
| FDP120N10 | Onsemi | Power Field-Effect Transistor, 74A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| FQPF45N15V2 | Onsemi | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF530 | National | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF7832 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 400 |
| IRF840ASPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRF9630SPBF | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRF9Z30 | Vishay | Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF9Z30PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRFH5004TR2PBF | IR | Power Field-Effect Transistor, 28A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5110TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5215TR2PBF | IR | Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5302DTR2PBF | IR | Power Field-Effect Transistor, 29A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH7107TR2PBF | IR | Power Field-Effect Transistor | 400 |
| IRFH7440TR2PBF | IR | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 400 |
| IRFH8324TR2PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFP2907ZPBF | Infineon | Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFP448 | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFPS40N60KPBF | Vishay | Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFS3307PBF | IR | Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRFS33N15DTRLP | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFSL4321PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 400 |
| IRFZ46ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRFZ48NPBF | IR | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRLHM630TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IXTP3N60P | IXYS | Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| MTP3055VL | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| R6012FNX | Rohm | Power Field-Effect Transistor, 12A I(D), 600V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| R6020FNX | Rohm | Power Field-Effect Transistor, 20A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| SIHB22N60S-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| SIHP22N60S-E3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| SIHS36N50D-E3 | Vishay | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA | 400 |
| STF11NM60ND | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STF13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STF15N65M5 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STP14NM50N | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STP30NF20 | ST Micro | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 400 |
| STW20NK50Z | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| SUP90140E-GE3 | Vishay | Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| TK34A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 75A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF6218STRLPBF | Infineon | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 399 |
| IPB117N20NFDATMA1 | Infineon | Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 398 |
| BUZ103AL | Infineon | Power Field-Effect Transistor, 35A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 396 |
| IRF9Z34NSTRLPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 395 |
| IRFR224TR | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 395 |
| PSMN4R0-30YLD | Nexperia | Power Field-Effect Transistor, 95A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 395 |
| STB75NF20 | ST Micro | Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 395 |
| TK100A06N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 395 |
| SUP75N08-09L-E3 | Siliconix | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 394 |
| IRF540NSPBF | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 393 |
| IRF7811A | IR | Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 390 |
| STW62N65M5 | ST Micro | Power Field-Effect Transistor, 46A I(D), 650V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 390 |
| TK12E60W | Toshiba | Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 390 |
| BSO301SPH | Infineon | Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 388 |
| ZVN4206GTA | Diodes | Power Field-Effect Transistor, 1A I(D), 60V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 388 |
| STB55NF06LT4 | ST Micro | Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 385 |
| STP220N6F7 | ST Micro | Power Field-Effect Transistor | 385 |
| VNP35N07-E | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 383 |
| IRFR120NTR | IR | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 381 |
| BSP89 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 380 |
| FDB075N15A | Onsemi | Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 380 |
| IRF7403PBF | Infineon | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 380 |
| AUIRFR3806 | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| BSC110N15NS5ATMA1 | Infineon | Power Field-Effect Transistor, 76A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 375 |
| BUZ342 | Infineon | Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 375 |
| FDB3652 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 375 |
| IRFR3303 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| IRFR5410 | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| IRFU1010Z | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 375 |
| IRLU3303 | IR | Power Field-Effect Transistor, 35A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 375 |
| NDS8958 | Fairchild Semi | Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 375 |
| IRF7379QPBF | Infineon | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 370 |
| BSP300E6327 | Infineon | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 365 |
| FQB55N10TM | Onsemi | Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 365 |
| MMQ60R190PTH | Magnachip | Power Field-Effect Transistor | 360 |
| STW42N60M2-EP | ST Micro | Power Field-Effect Transistor | 360 |
| SUD15N06-90L-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 360 |
| IRFU9024 | Siliconix | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 358 |
| SQM47N10-24L-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 356 |
| IRFS7434TRL7PP | IR | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 355 |
| 2SK2605 | Toshiba | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| AUIRF1404ZS | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRF3504 | Infineon | Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| AUIRF4104 | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| AUIRFB8407 | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 350 |
| AUIRFZ24NS | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRFZ44VZS | Infineon | Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRFZ48N | Infineon | Power Field-Effect Transistor | 350 |
| AUIRL3705ZS | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRLS3114Z | Infineon | Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 350 |
| BSZ150N10LS3GATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| FDP8896 | Onsemi | Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| FQPF20N06L | Onsemi | Power Field-Effect Transistor, 15.7A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| IRF3305PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRF9Z34PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRFIZ44G | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRFPS37N50APBF | Vishay | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| IRL510 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRLZ24NPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| NTP2955G | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 60V, 0.196ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| RF1S70N06SM | Harris | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| STF26N60DM6 | ST Micro | Power Field-Effect Transistor | 350 |
| STP13NK60ZFP | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP60N05-14 | ST Micro | Power Field-Effect Transistor, 60A I(D), 50V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP60NF06 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP80N10F7 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK14A65W | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK32E12N1 | Toshiba | Power Field-Effect Transistor, 32A I(D), 120V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK5A60W | Toshiba | Power Field-Effect Transistor, 5.4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| SUP75N03-04-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 346 |
| IRF6218PBF | Infineon | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 345 |
| IRFP4410ZPBF | Infineon | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 345 |
| IRFS4615PBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 345 |
| STB35NF10T4 | ST Micro | Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 345 |
| SUB45N03-13L-E3 | Vishay | Power Field-Effect Transistor, 45A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 345 |
| IPB60R055CFD7ATMA1 | Infineon | Power Field-Effect Transistor, 38A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 340 |
| SI4442DY-T1 | Vishay | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 340 |
| SUM50N06-16L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 340 |
| IRF7210 | IR | Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 339 |
| SIHP22N60E-E3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 334 |
| FQP13N06L | Onsemi | Power Field-Effect Transistor, 13.6A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 331 |
| AUIRFS8409-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 330 |
| CSD19538Q3AT | TI | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| IRF3703PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 330 |
| IRFU310PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 330 |
| RJK0305DPB-00-J0 | Renesas | Power Field-Effect Transistor, 30A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| STW13N95K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 330 |
| STY60NM50 | ST Micro | Power Field-Effect Transistor, 60A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| IPP110N20NA | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 328 |
| 2SJ377TE16L | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 325 |
| IRLZ24NSPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 325 |
| IPW60R045CP | Infineon | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 324 |
| IRFB3306GPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 324 |
| STW5NB100 | ST Micro | Power Field-Effect Transistor, 4.3A I(D), 1000V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 323 |
| SUP75N06-08 | Vishay | Power Field-Effect Transistor, 75A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 322 |
| BUZ50A | Infineon | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 320 |
| RFD16N05LSM9A | Harris | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 320 |
| STD2NC60 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 320 |
| IRFPG40PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 319 |
| IXTP3N120 | IXYS | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 311 |
| BSP296L6327 | Infineon | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 310 |
| IRLR6225TRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 310 |
| ZXMS6005DGTA | Diodes | Power Field-Effect Transistor, 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 310 |
| IRL540NS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 308 |
| IPD170N04NG | Infineon | Power Field-Effect Transistor, 30A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 305 |
| IPP80N06S2L-11 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 305 |
| BUZ74A | Infineon | Power Field-Effect Transistor, 2.1A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 302 |
| AUIRF2804WL | Infineon | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 300 |
| AUIRFS4310 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| C3M0021120K | Wolfspeed | Power Field-Effect Transistor, 100A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 300 |
| FDP047AN08A0 | Onsemi | Power Field-Effect Transistor, 80A I(D), 75V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQP45N03L | Fairchild Semi | Power Field-Effect Transistor, 41A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQP65N06 | Onsemi | Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQPF32N20C | Onsemi | Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IPD50N04S4-08 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 300 |
| IPP26CNE8NG | Infineon | Power Field-Effect Transistor, 35A I(D), 85V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IPP60R165CP | Infineon | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRF3007PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRF3415L | IR | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 300 |
| IRF6215S | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRF730SPBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRF9540NSHR | IR | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFB3207ZGPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFH5006TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFI520G | Siliconix | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFIBF20GPBF | Vishay | Power Field-Effect Transistor, 1.2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFP350LCPBF | Vishay | Power Field-Effect Transistor, 18A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 300 |
| IRFS3207PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRFS4229PBF | Infineon | Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFSL7762PBF | Infineon | Power Field-Effect Transistor | 300 |
| IRFZ46ZPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRL3705N | Infineon | Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRL3705ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRL520NS | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRLR7833PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 300 |
| IRLR7843PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 300 |
| MDF3N50 | Magnachip | Power Field-Effect Transistor | 300 |
| NTMFS5C628NLT1G | Onsemi | Power Field-Effect Transistor, 150A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| SFP9530 | Onsemi | Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| SPP06N80C3 | Infineon | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| SPP80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STF9NM60N | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STFW45N65M5 | ST Micro | Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| STP42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STP5NK80ZFP | ST Micro | Power Field-Effect Transistor, 4.3A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| STW56N65DM2 | ST Micro | Power Field-Effect Transistor | 300 |
| STW7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 300 |
| TK20E60W,S1VX | Toshiba | Power Field-Effect Transistor | 300 |
| TK46E08N1 | Toshiba | Power Field-Effect Transistor, 46A I(D), 80V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| TK56A12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFI4024H-117P | IR | Power Field-Effect Transistor, 11A I(D), 55V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 299 |
| SSH70N10A | Fairchild Semi | Power Field-Effect Transistor, 70A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 299 |
| FDB031N08 | Onsemi | Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 298 |
| STW15NA50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 296 |
| NTD5406NT4G | Onsemi | Power Field-Effect Transistor, 12.2A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 294 |
| IRF2805SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 293 |
| IRFU9024PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 293 |
| FDB047N10 | Fairchild Semi | Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 290 |
| IRFB20N50KPBF | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 290 |
| SIR698DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 290 |
| STB30NF10T4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 290 |
| IRF9317PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 289 |
| IRFI540N | Infineon | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 289 |
| AO3422 | Alpha Omega | Power Field-Effect Transistor, 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| AUIRF7319Q | Infineon | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| CSD17577Q3A | TI | Power Field-Effect Transistor, 35A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| IRF7316QPBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| IRF7353D1PBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| IRF7507PBF | Infineon | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| 2SK1859-E | Renesas | Power Field-Effect Transistor, 6A I(D), 900V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 281 |
| BUZ32L3045A | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 280 |
| STW34NM60N | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 280 |
| AUIRFP1405 | Infineon | Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| FDB28N30TM | Onsemi | Power Field-Effect Transistor, 28A I(D), 300V, 0.129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 275 |
| FDP036N10A | Onsemi | Power Field-Effect Transistor, 120A I(D), 100V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 275 |
| IRFP7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| SIHG20N50C-E3 | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| SPB70N10L | Infineon | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 275 |
| SQM50P08-25L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 275 |
| IRFBG30 | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 272 |
| STW21NM50N | ST Micro | Power Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 271 |
| FDA28N50 | Onsemi | Power Field-Effect Transistor, 28A I(D), 500V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 270 |
| IRLL014NTR | IR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 270 |
| IXTH7P50 | IXYS | Power Field-Effect Transistor, 7A I(D), 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 270 |
| STW12NK95Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 270 |
| STW35N65M5 | ST Micro | Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 270 |
| STW48NM60N | ST Micro | Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 270 |
| IRFR9120NPBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 266 |
| IRFS4115-7PPBF | Infineon | Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 266 |
| STB40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 266 |
| STN2NF10 | ST Micro | Power Field-Effect Transistor, 2A I(D), 100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 265 |
| AUIRF9952Q | Infineon | Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 264 |
| IRFS3206TRRPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 264 |
| RFD15P05SM | Harris | Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 264 |
| SPP07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 264 |
| IRFR110 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 263 |
| IRFZ44NPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 263 |
| FQB12P20TM | Fairchild Semi | Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 260 |
| STB80NF55-08T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 260 |
| IRF7832PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 256 |
| ZVN2110GTA | Diodes | Power Field-Effect Transistor, 0.5A I(D), 100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 254 |
| ZXMS6001N3TA | Diodes | Power Field-Effect Transistor, 1.1A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 254 |
| 2SK2733 | Toshiba | Power Field-Effect Transistor, 1A I(D), 900V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| AUIRF1404S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| AUIRF1404ZL | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF1405ZL | Infineon | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF2804 | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| AUIRF2804L | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF2804S | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| AUIRF3007 | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 250 |
| BUZ31 | Infineon | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| CSD25402Q3AT | TI | Power Field-Effect Transistor, -72A I(D), 20V, 0.0159ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| FDMC8321L | Onsemi | Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 250 |
| IPD90N03S4L03ATMA1 | Infineon | Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 250 |
| IRF3708PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRF3805L-7PPBF | IR | Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CA | 250 |
| IRF460 | NJ Semi | Power Field-Effect Transistor, 21A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| IRF9Z34S | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| IRFB7740PBF | Infineon | Power Field-Effect Transistor, 87A I(D), 75V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRFBE20 | Vishay | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRFP150 | Vishay | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 250 |
| IRFSL4615PBF | IR | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| IRL1404PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRL2910LPBF | IR | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| IRL510S | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| IRLZ24 | Vishay | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| MDF18N50BTH | Magnachip | Power Field-Effect Transistor | 250 |
| NTB6411ANG | Onsemi | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| SIHP10N40D-E3 | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| SPW47N60C3 | Infineon | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 250 |
| TK13A50DA | Toshiba | Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| TK15D60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| TK40A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| TK56E12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| TK6A80E | Toshiba | Power Field-Effect Transistor, 6A I(D), 800V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRL640SPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 247 |
| NTF3055-100T1G | Onsemi | Power Field-Effect Transistor | 245 |
| STW43NM60N | ST Micro | Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 243 |
| BUK9518-55 | NXP | Power Field-Effect Transistor, 57A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 242 |
| BSP372L6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 241 |
| 2SK3748-1E | Sanyo Semi | Power Field-Effect Transistor | 240 |
| FCH20N60 | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 240 |
| FQAF11N90 | Fairchild Semi | Power Field-Effect Transistor, 7.2A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 240 |
| SI7450DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 240 |
| BUZ21L | Infineon | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 239 |
| IRF1503PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 239 |
| IRL520NPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 235 |
| IRLR120N | Fairchild Semi | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 235 |
| IRL540PBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 234 |
| IRF7103PBF | Infineon | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 231 |
| IRF2907ZSTRLPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 230 |
| IRFD120PBF | Vishay | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 230 |
| IRFS4410PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 230 |
| BSP319E6327 | Infineon | Power Field-Effect Transistor, 3.8A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 229 |
| IRLU3110ZPBF | Infineon | Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 228 |
| SPP20N60S5 | Infineon | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 227 |
| STHV82FI | ST Micro | Power Field-Effect Transistor, 3.6A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 226 |
| IRFL9014PBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 225 |
| IRFR7446PBF | Infineon | Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 225 |
| IRFU120N | Infineon | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 225 |
| NTD2955-1G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 225 |
| IRF8707TRPBF | IR | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 220 |
| IRFB4710 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 220 |
| IRFU224PBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 220 |
| ZVP2110G | Diodes | Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 220 |
| IRF7202 | IR | Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 218 |
| IPP072N10N3G | Infineon | Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 217 |
| MTB20N20ET4 | Onsemi | Power Field-Effect Transistor, 20A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 217 |
| BUZ111SE3045A | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 215 |
| FQA30N40 | Onsemi | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 215 |
| IRFW640B | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 215 |
| SPD06N60C3 | Infineon | Power Field-Effect Transistor, 6.2A I(D), 650V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 215 |
| STD8N65M5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 215 |
| STD16NE06L | ST Micro | Power Field-Effect Transistor, 16A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 214 |
| FDB070AN06A0 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 213 |
| MTD20N03HDL | Onsemi | Power Field-Effect Transistor, 20A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 210 |
| STW57N65M5 | ST Micro | Power Field-Effect Transistor | 210 |
| IXTA180N10T | Littelfuse | Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 209 |
| MTW32N20E | Onsemi | Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 208 |
| IRF7105 | IR | Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 206 |
| IRFU5410PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 203 |
| IRFZ48STRLPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 203 |
| AUIRF1324 | Infineon | Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF1404 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF2903Z | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF2903ZL | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| AUIRF2903ZS | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRF3205 | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 200 |
| AUIRF3805 | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF3805S | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRFS4310Z | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRFSL3206 | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| AUIRL1404S | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| BSP125E6433 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| FCI7N60 | Onsemi | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| FCP13N60N | Onsemi | Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| FDB082N15A | Onsemi | Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| FDP038AN06A0 | Onsemi | Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| FQPF7N80C | Onsemi | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IPD50N04S4-10 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 200 |
| IRF1405ZS-7P | Infineon | Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRF4104L | IR | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF510A | Fairchild Semi | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRF530NLPBF | IR | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF7307PBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 200 |
| IRF740AL | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF820ASPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRF840ALPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRFD024 | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFI4410ZGPBF | IR | Power Field-Effect Transistor, 43A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRFI634G | Vishay | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRFS38N20DTRLP | Infineon | Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| IRFS41N15DPBF | Infineon | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFS7730PBF | Infineon | Power Field-Effect Transistor | 200 |
| IRFS7762PBF | Infineon | Power Field-Effect Transistor | 200 |
| IRFS9N60APBF | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFZ44NLPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRL530NSPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRLBA3803PPBF | IR | Power Field-Effect Transistor, 179A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| MDP1923TH | Magnachip | Power Field-Effect Transistor | 200 |
| NTP6411ANG | Onsemi | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| PSMN070-200P | Nexperia | Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| RFP10P15 | Harris | Power Field-Effect Transistor, 10A I(D), 150V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| SIHB22N60S-E3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| SIHF9520S | Vishay | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| SIR438DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| SPA12N50C3 | Infineon | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STB9NK50Z | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| STP10N95K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP15N80K5 | ST Micro | Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP160N75F3 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP210N75F6 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP5NK50Z | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP76NF75 | ST Micro | Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP7NK40Z | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK10A80E,S4X | Toshiba | Power Field-Effect Transistor | 200 |
| TK11A65W | Toshiba | Power Field-Effect Transistor, 11.1A I(D), 650V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK14E65W | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK35E08N1 | Toshiba | Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| SIHU5N50D-E3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 199 |
| IRFR3806TRPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 198 |
| MTW26N15E | Motorola | Power Field-Effect Transistor, 26A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 197 |
| BUK455-400B | NXP | Power Field-Effect Transistor, 6.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 196 |
| BUK9608-55 | NXP | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 195 |
| FDMC86340 | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 195 |
| IRF1010S | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 195 |
| IRF540STRR | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 195 |
| IRFR48Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 195 |
| IRFR2407PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 192 |
| IRF7452QPBF | IR | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRF7463 | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 190 |
| IRF7470 | Infineon | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRF9952PBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRFP4568PBF | Infineon | Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 190 |
| IRFB7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 188 |
| HUF76619D3S | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 185 |
| BUZ21 | Infineon | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 182 |
| TK72A12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 182 |
| BUK456-200B | NXP | Power Field-Effect Transistor, 17A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 180 |
| IRFZ44NS | IR | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 180 |
| MTD2955VT4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 180 |
| SSP5N90 | Samsung | Power Field-Effect Transistor, 5A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 180 |
| STW13NK60Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 180 |
| STW15NK90Z | ST Micro | Power Field-Effect Transistor, 15A I(D), 900V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 180 |
| STW35N60DM2 | ST Micro | Power Field-Effect Transistor | 180 |
| TK100A10N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 179 |
| 2SK1329 | Renesas | Power Field-Effect Transistor, 12A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 178 |
| BSP295H6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 175 |
| IRFP21N60LPBF | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 175 |
| IRFU7440PBF | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 175 |
| IRF9610PBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 173 |
| STW3N150 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 172 |
| IRLU024NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 171 |
| 2SK856 | Toshiba | Power Field-Effect Transistor, 45A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 170 |
| AO3414 | Alpha Omega | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 170 |
| STV300NH02L | ST Micro | Power Field-Effect Transistor, 280A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 170 |
| IRF8010SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 169 |
| VNB35N07-E | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 169 |
| IRF540 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 167 |
| IRFR120NPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 167 |
| FDP3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 165 |
| IRF5305PBF | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 161 |
| SK115MAA10 | Semikron | Power Field-Effect Transistor, 95A I(D), 100V, 0.0045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 161 |
| NP110N04PUG-AZ | Renesas | Power Field-Effect Transistor, 110A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 160 |
| SI4967DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 12V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 160 |
| IRFR3410PBF | IR | Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 155 |
| NP110N04PUG | Renesas | Power Field-Effect Transistor, 110A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 155 |
| RFP14N05L | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 155 |
| NVD5C464NT4G | Onsemi | Power Field-Effect Transistor | 154 |
| 2SK2661 | Toshiba | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| AUIRF4905L | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| AUIRFS3004 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| AUIRFS3107 | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| AUIRFZ44V | Infineon | Power Field-Effect Transistor, 55A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 150 |
| AUIRLR014N | Infineon | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 150 |
| AUIRLS3036 | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| CSD18540Q5B | TI | Power Field-Effect Transistor, 28A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FCA20N60 | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FDA38N30 | Onsemi | Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FDH3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 150 |
| FDP050AN06A0 | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| FQP2N60C | Onsemi | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| FQPF70N10 | Onsemi | Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| IPD144N06NG | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IPP05CN10NG | Infineon | Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IPW65R190C7 | Infineon | Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 150 |
| IRF1405LPBF | IR | Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRF520NLPBF | IR | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRF640NPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF740APBF | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF9530PBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF9Z24PBF | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB23N20DPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB3004PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB7746PBF | Infineon | Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIB7N50APBF | Vishay | Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIBF30GPBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIZ48NPBF | Infineon | Power Field-Effect Transistor, 40A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFP260MPBF | Infineon | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| IRFR020 | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IRFS11N50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| IRFSL3107PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRFSL4227PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRL3803LPBF | IR | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRLB3813PBF | Infineon | Power Field-Effect Transistor, 260A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRLR8103VPBF | Infineon | Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IRLZ24NS | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| SCT1000N170 | ST Micro | Power Field-Effect Transistor | 150 |
| STP12NM50 | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP13N95K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP30NF10 | ST Micro | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP4NK60Z | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP4NK80ZFP | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP60NF03L | ST Micro | Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP80NF55-08 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP80NS04Z | ST Micro | Power Field-Effect Transistor, 80A I(D), 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STW20NB50 | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| STW30NM60N | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| STY140NS10 | ST Micro | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| SUP75N08-09L | Siliconix | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| TK17A65W,S5X | Toshiba | Power Field-Effect Transistor | 150 |
| TK17E65W | Toshiba | Power Field-Effect Transistor, 17.3A I(D), 650V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| TK20D60U | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| TK60D08J1 | Toshiba | Power Field-Effect Transistor, 60A I(D), 75V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| 2SK2078 | Toshiba | Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 149 |
| IRFR220NPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 149 |
| BUZ31H | Infineon | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 146 |
| IRF7205 | Infineon | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 146 |
| IRFSL3806PBF | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 146 |
| IRF7807ZPBF | Infineon | Power Field-Effect Transistor | 145 |
| SI4178DY-T1-GE3 | Siliconix | Power Field-Effect Transistor, 12A I(D), 30V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 145 |
| IRF7424TRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 142 |
| IRF7313TRPBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 140 |
| IRFBC20SPBF | Vishay | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 140 |
| 2SK2761-01MR | Fuji Elec | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 139 |
| IRFP22N50A | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 138 |
| BUZ173 | Infineon | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 134 |
| BUZ32 | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 133 |
| AON6454 | Alpha Omega | Power Field-Effect Transistor, 30A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 132 |
| STD30PF03LT4 | ST Micro | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 132 |
| IRF7416PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 130 |
| IRFI9Z24GPBF | Vishay | Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130 |
| IRFS4310ZTRLPBF | IR | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 130 |
| MDP1932TH | Magnachip | Power Field-Effect Transistor | 130 |
| PSMN040-100MSEX | Nexperia | Power Field-Effect Transistor, 30A I(D), 100V, 0.0366ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 130 |
| STP13NK60Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130 |
| BUZ71FI | ST Micro | Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 129 |
| IRF3205S | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 129 |
| IRF7494PBF | IR | Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 129 |
| STP80NF12 | ST Micro | Power Field-Effect Transistor, 80A I(D), 120V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 129 |
| AUIRF3004WL | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 127 |
| AUIRFP2602 | Infineon | Power Field-Effect Transistor, 180A I(D), 24V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 125 |
| IRF3710Z | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 125 |
| IRFR320TRPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 125 |
| IRFU4615PBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 125 |
| AIMZH120R010M1T | Infineon | Power Field-Effect Transistor, 202A I(D), 1200V, 0.0113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 123 |
| IRFB7434PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 123 |
| 2SK2677 | Shindengen | Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 120 |
| FCH041N60E | Onsemi | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | 120 |
| HUF75852G3 | Onsemi | Power Field-Effect Transistor, 75A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 120 |
| IRF7492PBF | IR | Power Field-Effect Transistor, 3.7A I(D), 200V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 120 |
| IRFPC60LCPBF | Vishay | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 120 |
| STW48N60M6-4 | ST Micro | Power Field-Effect Transistor, 39A I(D), 600V, 0.069ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 120 |
| STW52NK25Z | ST Micro | Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 120 |
| IPD65R600E6 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 118 |
| SPD30N08S2L-21 | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 117 |
| BSP149 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 115 |
| IRF9640PBF | Vishay | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 114 |
| IXFN36N60 | Littelfuse | Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 112 |
| MSCSM170AM029CT6LIAG | Microchip | Power Field-Effect Transistor, 676A I(D), 1700V, 0.00375ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 112 |
| BSC190N15NS3GATMA1 | Infineon | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 111 |
| BSP92PH6327 | Infineon | Power Field-Effect Transistor, 0.26A I(D), 250V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 110 |
| IRFR3707ZTRPBF | IR | Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 110 |
| STE88N65M5 | ST Micro | Power Field-Effect Transistor | 110 |
| IRF7317PBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 109 |
| SPP80P06P | Infineon | Power Field-Effect Transistor, 91A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 109 |
| IRFZ34NPBF | Infineon | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 106 |
| TK15A60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 106 |
| IPG20N04S409ATMA1 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0086ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 105 |
| IRF530NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 104 |
| APT5024BVFRG | Microsemi | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 103 |
| SI7852ADP-T1-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 103 |
| SCT055HU65G3AG | ST Micro | Power Field-Effect Transistor | 102 |
| 2SK2056 | Toshiba | Power Field-Effect Transistor, 4A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| 2SK2237 | Toshiba | Power Field-Effect Transistor, 7A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| AUIRF2807 | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| AUIRFS3306 | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| BSC030P03NS3G | Infineon | Power Field-Effect Transistor, 25.4A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BSC035N04LSG | Infineon | Power Field-Effect Transistor, 21A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BSC123N08NS3GATMA1 | Infineon | Power Field-Effect Transistor, 55A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BUZ78 | Infineon | Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| FQP3N60C | Onsemi | Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| FQP85N06 | Onsemi | Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IAUT300N10S5N015ATMA1 | Infineon | Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IPA80R360P7 | Infineon | Power Field-Effect Transistor, 13A I(D), 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPA80R450P7 | Infineon | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPAN70R900P7S | Infineon | Power Field-Effect Transistor, 6A I(D), 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPI80N04S3-H4 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IPP60R099CP | Infineon | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPP60R299CP | Infineon | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPP80N06S2-07 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF3205LPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRF3805LPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRF3805SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRF530N | NXP | Power Field-Effect Transistor, 17A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF530NSPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF530PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF540NSHR | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF740ASPBF | IR | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF820 | Thomson Elec | Power Field-Effect Transistor, 2.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| IRF840B | Fairchild Semi | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF9510SPBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRF9530 | IR | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF9640 | IR | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFB33N15DPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFB4410PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFBC20 | Vishay | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFBF30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFI4019H-117P | Infineon | Power Field-Effect Transistor, 8.7A I(D), 150V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRFI640G | Vishay | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFP140 | Vishay | Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| IRFP140NPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| IRFR5305PBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 100 |
| IRFS11N50A | Siliconix | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRFSL4620PBF | IR | Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRFZ34PBF | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRL3103SPBF | IR | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| PSMN035-150P | Nexperia | Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| SI4490DY | Vishay | Power Field-Effect Transistor, 2.85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| SI4807DY | Siliconix | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| SIHG33N60E-GE3 | Vishay | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| SPP07N60S5 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STB45N60DM2AG | ST Micro | Power Field-Effect Transistor, 34A I(D), 600V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| STP11NK50ZFP | ST Micro | Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STP14NF12 | ST Micro | Power Field-Effect Transistor, 14A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STP3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK100E08N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK10A60W | Toshiba | Power Field-Effect Transistor, 9.7A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK12A60W | Toshiba | Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK12J60U(F) | Toshiba | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| TK8A60W | Toshiba | Power Field-Effect Transistor, 8A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| VNP14N04 | ST Micro | Power Field-Effect Transistor | 100 |
| IRF9620 | Fairchild Semi | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 99 |
| IRFP450PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 99 |
| NP80N04CHE | Renesas | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 99 |
| RS1E350GNTB | Rohm | Power Field-Effect Transistor, 35A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 99 |
| SCH2080KEC | Rohm | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 98 |
| STB170NF04 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 98 |
| SI4410DY | Vishay | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 97 |
| IRFP4368PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 96 |
| SI4806DY | Siliconix | Power Field-Effect Transistor, 7.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 96 |
| AUIRF7416Q | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| CPH6354-TL-W | Onsemi | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 95 |
| FQU9N25TU | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 95 |
| IRF7380QPBF | IR | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| IRF7805QPBF | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| SMP3003-TL-1E | Onsemi | Power Field-Effect Transistor, 100A I(D), 75V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 95 |
| STW55NE10 | ST Micro | Power Field-Effect Transistor, 55A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 95 |
| IRF3805S-7PPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 94 |
| NTMD4N03R2G | Onsemi | Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 93 |
| IRF9956TRPBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 92 |
| IRL640S | Siliconix | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 92 |
| IRF7807PBF | IR | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 91 |
| IRLB4030PBF | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 91 |
| 2SK2221-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 90 |
| 2SK3747-1E | Onsemi | Power Field-Effect Transistor, 2A I(D), 1500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 90 |
| FCH47N60_F133 | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | 90 |
| FDD7N20TM | Onsemi | Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 90 |
| FDP020N06B_F102 | Onsemi | Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| IRFR024N | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 90 |
| IRFS3306PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 90 |
| RJ1L12BGNTLL | Rohm | Power Field-Effect Transistor, 120A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 90 |
| STP20NM50FP | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| STW42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 90 |
| STW58N60DM2AG | ST Micro | Power Field-Effect Transistor | 90 |
| STW70N60DM6-4 | ST Micro | Power Field-Effect Transistor | 90 |
| STW9NK90Z | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 90 |
| TK14A65W5 | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| IPB072N15N3GATMA1 | Infineon | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 89 |
| IRFR4620TRLPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 89 |
| BSC018N04LSG | Infineon | Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 88 |
| IRFB3206PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 88 |
| STP36NF06 | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 88 |
| SISS40DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 87 |
| SPP12N50C3 | Infineon | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 87 |
| IPA65R400CEXKSA1 | Infineon | Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 86 |
| IRF7313PBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 86 |
| SUM110P06-08L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 60V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 85 |
| ZVN3220L | Zetex | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 85 |
| SCT2750NYTB | Rohm | Power Field-Effect Transistor, 5.9A I(D), 1700V, 0.975ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA | 83 |
| IRF7303 | Infineon | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 82 |
| IRF7304PBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 82 |
| BUZ15 | Siemens | Power Field-Effect Transistor, 45A I(D), 50V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 80 |
| BUZ271 | Siemens | Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| HUF75639G3 | Onsemi | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 80 |
| IRF830 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| IRFR9210 | Siliconix | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 80 |
| IRFS4115PBF | Infineon | Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 80 |
| IRFZ44VPBF | Infineon | Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| R6030MNX | Rohm | Power Field-Effect Transistor, 30A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| STW20NM60FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 80 |
| STW56N60DM2 | ST Micro | Power Field-Effect Transistor | 80 |
| IRF7433 | IR | Power Field-Effect Transistor, 8.9A I(D), 12V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 79 |
| IRF7220PBF | IR | Power Field-Effect Transistor, 11A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 78 |
| AUIRFP4004 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 75 |
| AUIRFR2407 | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| AUIRFR2607Z | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| AUIRFR4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| IRFP7530PBF | Infineon | Power Field-Effect Transistor, 281A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 75 |
| IRFR220N | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| IRLU2703PBF | Infineon | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 75 |
| IRLU3105PBF | IR | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 75 |
| TK16J60W | Toshiba | Power Field-Effect Transistor, 15.8A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 75 |
| BUK456-100A | NXP | Power Field-Effect Transistor, 34A I(D), 100V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 74 |
| IRLZ44NSPBF | Infineon | Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 74 |
| IRFB4212PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 100V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 73 |
| BUZ103 | Infineon | Power Field-Effect Transistor, 40A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 72 |
| IRFR5305 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 72 |
| IRF7205PBF | Infineon | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 71 |
| DMP10H400SE-13 | Diodes | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 70 |
| FDMS86300DC | Fairchild Semi | Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 70 |
| IPP030N10N5AKSA1 | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 70 |
| IRF5210PBF | Infineon | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 70 |
| IRF8910 | Infineon | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 70 |
| IRFU4105 | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 70 |
| PSMN4R2-30MLDX | Nexperia | Power Field-Effect Transistor, 70A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 69 |
| IRFR6215PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 68 |
| IRFR13N20D | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 66 |
| MTD15N06VT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 66 |
| CSD25402Q3A | TI | Power Field-Effect Transistor, -72A I(D), 20V, 0.0159ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 65 |
| IRF7907PBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0118ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 65 |
| IRFS3006PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 65 |
| STW4N150 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 65 |
| 2SJ173 | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 64 |
| SUB65P04-15 | Siliconix | Power Field-Effect Transistor, 65A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 63 |
| BSC080P03LSG | Infineon | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 62 |
| NTMFS4927NT1G | Onsemi | Power Field-Effect Transistor | 62 |
| IRFU2905ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 61 |
| STW25NM60N | ST Micro | Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 61 |
| 2SK1317-E | Renesas | Power Field-Effect Transistor, 2.5A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| DMTH43M8LPSQ-13 | Diodes | Power Field-Effect Transistor | 60 |
| FDP025N06 | Onsemi | Power Field-Effect Transistor, 120A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 60 |
| IPG20N04S4L-07 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| IRF510 | Fairchild Semi | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 60 |
| IRF7457 | Infineon | Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 60 |
| IRLR8103V | Infineon | Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 60 |
| IXFH13N50 | IXYS | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 60 |
| STS7PF30L | ST Micro | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| IRF8736 | Infineon | Power Field-Effect Transistor | 58 |
| IRFF310 | Infineon | Power Field-Effect Transistor, 1.25A I(D), 400V, 4.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 57 |
| IRFD9120PBF | Vishay | Power Field-Effect Transistor, 1A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 56 |
| AUIRFS4115 | IR | Power Field-Effect Transistor | 55 |
| IRF9Z34NSPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 55 |
| IRFR1205PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 55 |
| BUZ63 | Infineon | Power Field-Effect Transistor, 5.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 54 |
| IRFPG50 | Vishay | Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 54 |
| NDT456P | Onsemi | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 54 |
| FDB2614 | Onsemi | Power Field-Effect Transistor, 62A I(D), 200V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 52 |
| IRLI530NPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 52 |
| SFH9240 | Fairchild Semi | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 52 |
| VQ1001P | Vishay | Power Field-Effect Transistor, 0.85A I(D), N-Channel, Metal-oxide Semiconductor FET | 52 |
| 2SJ304 | Toshiba | Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| 2SK2382 | Toshiba | Power Field-Effect Transistor, 15A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| 2SK3564 | Toshiba | Power Field-Effect Transistor, 3A I(D), 900V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| AUIRFB4410 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| AUIRFS3806 | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| AUIRLS4030 | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| BSC016N04LSG | Infineon | Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| BUZ20 | Infineon | Power Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FDP150N10 | Onsemi | Power Field-Effect Transistor, 57A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FQP12P20 | Onsemi | Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FQP44N10 | Onsemi | Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF3415SPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF4905SPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 50 |
| IRF540N | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF640S | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF6668TR1PBF | IR | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF840PBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF9540NLPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 50 |
| IRFB3256PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 50 |
| IRFB4115PBF | Infineon | Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFB4510PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFBA90N20DPBF | Infineon | Power Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA | 50 |
| IRFBC30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFP150NPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFP4228PBF | IR | Power Field-Effect Transistor, 78A I(D), 150V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFP4332PBF | Infineon | Power Field-Effect Transistor, 57A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFPC40 | Vishay | Power Field-Effect Transistor, 6.8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFR13N20DPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50 |
| IRFR15N20DTRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50 |
| IRFS4020PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| IRL1104SPBF | IR | Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| KF80N08P | Kec Corp | Power Field-Effect Transistor, 80A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| KHB011N40F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB019N20P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB1D9N60I | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB2D0N60F | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB4D0N65F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB4D0N80P1 | Kec Corp | Power Field-Effect Transistor, 4A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| KHB4D5N60P | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB5D0N50F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB6D0N40P | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N65F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N65P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N80P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB9D0N50F1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB9D0N50P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| RSJ400N10TL | Rohm | Power Field-Effect Transistor, 40A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| STB10NK60Z-1 | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 50 |
| STF26N60M2 | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| STF33N60M6 | ST Micro | Power Field-Effect Transistor | 50 |
| STP80PF55 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| STW5NK100Z | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| TK10A50D | Toshiba | Power Field-Effect Transistor, 10A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| TK15E60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK20A60U(Q) | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| TK20E60U | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK34E10N1 | Toshiba | Power Field-Effect Transistor, 34A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK72A08N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| VNB35N07 | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 50 |
| 2SK2916 | Toshiba | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 49 |
| IRF720 | Microsemi | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | 49 |
| IRFI9530GPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 49 |
| IRFU014 | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 49 |
| IRF9540PBF | Vishay | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 48 |
| IRFP440 | Vishay | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 48 |
| IRFZ44ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 48 |
| HAT1055RJ | Renesas | Power Field-Effect Transistor, 5A I(D), 60V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 47 |
| IPB34CN10NG | Infineon | Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 47 |
| IRF630NSPBF | Infineon | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 47 |
| UJN1205K | USCI | Power Field-Effect Transistor, 38A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 | 46 |
| 2SK2267 | Toshiba | Power Field-Effect Transistor, 60A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45 |
| IRF3709ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 45 |
| IRF7468PBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 45 |
| IRL640A | Onsemi | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 45 |
| IRLR8743PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 45 |
| SI7997DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0078ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 45 |
| FQD2N100TM | Onsemi | Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 44 |
| IRF9Z34NPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 43 |
| SI4562DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 43 |
| 2N6766 | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | 42 |
| BUZ350 | Infineon | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 42 |
| FQD11P06TM | Onsemi | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 42 |
| IRF640 | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 42 |
| IRF7842TRPBF | IR | Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 42 |
| IRFZ48NSPBF | IR | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 42 |
| MTP23P06VG | Onsemi | Power Field-Effect Transistor, 23A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 42 |
| FDS8949 | Onsemi | Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 41 |
| SI4542DY | Onsemi | Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 41 |
| 2SK2543 | Toshiba | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| 2SK3878 | Toshiba | Power Field-Effect Transistor, 9A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| FDS86140 | Onsemi | Power Field-Effect Transistor, 11.2A I(D), 100V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 40 |
| IRF540ZPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 40 |
| JANTX2N6845 | Infineon | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 40 |
| STE40NC60 | ST Micro | Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| STW20NM50FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 40 |
| IRF430 | Harris | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 39 |
| IRF9Z34NS | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 39 |
| IRFR24N15D | Infineon | Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 38 |
| STW6NA80 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 38 |
| IRFZ34VSPBF | IR | Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 37 |
| IXTH24P20 | IXYS | Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 37 |
| IRF1324S-7PPBF | Infineon | Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 36 |
| IRFR5505TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 35 |
| BUK455-100A | NXP | Power Field-Effect Transistor, 26A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 34 |
| IRFP450 | Vishay | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 34 |
| STP20NM50FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 34 |
| IRF640NSTRLPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 32 |
| SPP18P06PH | Infineon | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 32 |
| UPA2794GR(0)-E1-AZ | Renesas | Power Field-Effect Transistor, 5.5A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 32 |
| MG50H2YM1 | Toshiba | Power Field-Effect Transistor, 50A I(D), 500V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 31 |
| STH3N150-2 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 31 |
| STP40NF10 | ST Micro | Power Field-Effect Transistor, 50A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 31 |
| SUB70N03-09BP | Vishay | Power Field-Effect Transistor, 70A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 31 |
| 2N7075 | Siliconix | Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 30 |
| 2SK2750 | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| AP4953GM-HF | Advanced power | Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| AUIRF9Z34N | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 30 |
| BTS3160D | Infineon | Power Field-Effect Transistor, 7.8A I(D), 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 30 |
| BUZ88A | Infineon | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 30 |
| G3R12MT12K | Navitas | Power Field-Effect Transistor, 155A I(D), 1200V, 0.0135ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 30 |
| IPW60R045CPA | Infineon | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 30 |
| IRFP4768PBF | Infineon | Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 30 |
| KHB9D0N90NA | Kec Corp | Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| MTW8N60E | Onsemi | Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 30 |
| SCT50N120 | ST Micro | Power Field-Effect Transistor, 65A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 30 |
| SCTW40N120G2VAG | ST Micro | Power Field-Effect Transistor, 33A I(D), 1200V, 0.105ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 30 |
| STV270N4F3 | ST Micro | Power Field-Effect Transistor, 270A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| STW60NE10 | ST Micro | Power Field-Effect Transistor, 60A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 30 |
| IRFL4105PBF | Infineon | Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 29 |
| STW13NK100Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 29 |
| AO3418 | Alpha Omega | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 28 |
| IPD70N03S4L-04 | Infineon | Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 28 |
| MTP2P50E | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28 |
| STP80NF10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28 |
| AON6242 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 60V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 26 |
| FDP032N08 | Onsemi | Power Field-Effect Transistor, 235A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 26 |
| IRL3803PBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 26 |
| AUIRF4905STRL | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IPB60R099CPA | Infineon | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IRF640NSPBF | IR | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IRFP260 | Vishay | Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 25 |
| IRFP4710PBF | Infineon | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 25 |
| BUZ355 | Infineon | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 24 |
| IRFP3710PBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 24 |
| IRFR9120N | Infineon | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 24 |
| IRFU3910 | IR | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 24 |
| NTF2955T1G | Onsemi | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 24 |
| SIR878BDP-T1-RE3 | Vishay | Power Field-Effect Transistor, 42.5A I(D), 100V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24 |
| STW50N65DM2AG | ST Micro | Power Field-Effect Transistor, 38A I(D), 650V, 0.087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 24 |
| IRF640PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 23 |
| MTP2P50EG | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 23 |
| IPP80N04S3-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB | 22 |
| IRF1405PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 22 |
| FQPF4P40 | Fairchild Semi | Power Field-Effect Transistor, 2.4A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 21 |
| IXFK24N100 | IXYS | Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | 21 |
| JANTX2N6798 | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 21 |
| BUZ36 | Siemens | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 20 |
| BUZ905DP | TT Electronics | Power Field-Effect Transistor, 16A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | 20 |
| C2M1000170J | Wolfspeed | Power Field-Effect Transistor, 5.3A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 20 |
| FQPF5N60C | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 20 |
| IPP030N10N5 | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 20 |
| SQJ431EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 200V, 0.221ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| STE30NK90Z | ST Micro | Power Field-Effect Transistor, 28A I(D), 900V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| STE70NM50 | ST Micro | Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| BUZ90A | Infineon | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19 |
| IMZ120R030M1HXKSA1 | Infineon | Power Field-Effect Transistor, 56A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 19 |
| IPP110N20N3G | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19 |
| IRFR9220PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 19 |
| IRF1010ESPBF | IR | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18 |
| IRF3515SPBF | IR | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18 |
| IRFP9240 | Vishay | Power Field-Effect Transistor, 12A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 18 |
| BSZ042N06NS | Infineon | Power Field-Effect Transistor, 98A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17 |
| BUZ30AH | Infineon | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17 |
| FQA90N15 | Onsemi | Power Field-Effect Transistor, 90A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17 |
| 2N6784 | Infineon | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 16 |
| BSG0812ND | Infineon | Power Field-Effect Transistor, 49A I(D), 25V, 0.0046ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 16 |
| IRF740 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 16 |
| FQP19N10 | Fairchild Semi | Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15 |
| STB34NM60ND | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 15 |
| STD65N55F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 14 |
| IRF9530NPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 13 |
| IRFS4010PBF | IR | Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 13 |
| IRFU120NPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 13 |
| SF200AA20 | Sansha Electric | Power Field-Effect Transistor, 200A I(D), 1-Element, Metal-oxide Semiconductor FET | 13 |
| SIR876DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 100V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 13 |
| SPD50P03LG | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 13 |
| MRF21085 | Freescale | Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | 12 |
| BUZ11A | Siemens | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10 |
| FQP6N60C | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10 |
| FQPF55N10 | Fairchild Semi | Power Field-Effect Transistor, 34.2A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| IRF7424 | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 10 |
| IRFR5410PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10 |
| IXFH28N60P3 | Littelfuse | Power Field-Effect Transistor, 28A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 10 |
| IXTM67N10 | IXYS | Power Field-Effect Transistor, 67A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 10 |
| SK260MB10 | Semikron | Power Field-Effect Transistor, 230A I(D), 100V, 0.0025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| STE45NK80ZD | ST Micro | Power Field-Effect Transistor, 45A I(D), 800V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| IRF9130 | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 9 |
| IRFP260N | Infineon | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 9 |
| BSZ042N06NSATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8 |
| IXTP01N100D | IXYS | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD | 8 |
| 2SK3566 | Toshiba | Power Field-Effect Transistor, 2.5A I(D), 900V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7 |
| AUIRF4905S | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 7 |
| IXTH1N200P3 | Littelfuse | Power Field-Effect Transistor, 1A I(D), 2000V, 40ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 7 |
| IXTH64N10L2 | IXYS | Power Field-Effect Transistor | 7 |
| STP9N60M2 | ST Micro | Power Field-Effect Transistor | 7 |
| BSC340N08NS3G | Infineon | Power Field-Effect Transistor, 23A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| BSM244F | Siemens | Power Field-Effect Transistor, 45A I(D), 400V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| CHT-PLA2016A-CSOIC16-T | Cissoid | Power Field-Effect Transistor | 5 |
| CHT-PLA4091A-TDFP16-T | Cissoid | Power Field-Effect Transistor, 1A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| IRFR5505PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5 |
| IRLI2203NPBF | IR | Power Field-Effect Transistor, 61A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5 |
| IXFH40N30Q | Littelfuse | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 5 |
| STE70NM60 | ST Micro | Power Field-Effect Transistor, 70A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| STP6NK50Z | ST Micro | Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4 |
| SUM55P06-19L | Siliconix | Power Field-Effect Transistor, 55A I(D), 60V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4 |
| 2SK2393-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1500V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| CSD17313Q2T | TI | Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| FCA75BC50 | Sansha Electric | Power Field-Effect Transistor, 75A I(D), 1-Element, Metal-oxide Semiconductor FET | 1 |
| NTD14N03RT4G | Onsemi | Power Field-Effect Transistor, 11.4A I(D), 25V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| SKM111AR | Semikron | Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| SPA04N60C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1 |
| SUD50P06-15-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1 |
| 2N6782 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | on request |
| 2SJ352-E | Renesas | Power Field-Effect Transistor, 8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK1579DYTR | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK1620(S) | Hitachi | Power Field-Effect Transistor, 10A I(D), 0.15ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| 2SK1623S | Renesas | Power Field-Effect Transistor, 20A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2225-E | Renesas | Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2231 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2917(F) | Toshiba | Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| 2SK3919-ZK-E1 | Renesas | Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AO4612 | Alpha Omega | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.056ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AOB20S60L | Alpha Omega | Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AOD5N50 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| AON6280 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AON7406 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AON7410 | Alpha Omega | Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AOT27S60L | Alpha Omega | Power Field-Effect Transistor, 27A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AUIRF540ZS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRF6215 | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| AUIRF6215STRL | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRF7304Q | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRF7309QTR | Infineon | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRF7341QTR | Infineon | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRFN8403TR | Infineon | Power Field-Effect Transistor, 95A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AUIRFN8459TR | IR | Power Field-Effect Transistor, 50A I(D), 40V, 0.0059ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AUIRFR9024N | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRFR9024NTR | IR | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRFS3307Z | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRFS3607 | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRFS4410Z | Infineon | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRLR024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLR2905 | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLR3110Z | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLS3036TRR | IR | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRLS4030-7P | Infineon | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BF1009S-E6327 | Infineon | Power Field-Effect Transistor, 0.025A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF1009SR-E6327 | Infineon | Power Field-Effect Transistor, 0.025A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF992 | NA Philips | Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BSC014N06NST | Infineon | Power Field-Effect Transistor, 257A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC022N03S | Infineon | Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC028N06LS3G | Infineon | Power Field-Effect Transistor, 100A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC076N06NS3G | Infineon | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC252N10NSFG | Infineon | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC350N20NSFD | Infineon | Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSM252F | Infineon | Power Field-Effect Transistor, 18A I(D), 1-Element, Metal-oxide Semiconductor FET | on request |
| BSP315P | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSP317PL6327 | Infineon | Power Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSP613PH6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSS83 | Philips Semi | Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BSZ076N06NS3G | Infineon | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSZ097N04LSG | Infineon | Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSZ110N08NS5ATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BTS112AE3045A | Infineon | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK563-60A | NXP | Power Field-Effect Transistor, 21A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK7611-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK7Y12-55B | Nexperia | Power Field-Effect Transistor, 61.8A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9575-55A | Nexperia | Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUK9624-55A | Nexperia | Power Field-Effect Transistor, 46A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK98180-100A | NXP | Power Field-Effect Transistor, 4.6A I(D), 100V, 0.201ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK9880-55 | Nexperia | Power Field-Effect Transistor, 3.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK9Y15-60E | Nexperia | Power Field-Effect Transistor, 53A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y4R4-40E | Nexperia | Power Field-Effect Transistor, 100A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y4R4-40E,115 | Nexperia | Power Field-Effect Transistor, 100A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y65-100E | Nexperia | Power Field-Effect Transistor, 19A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUZ10 | ST Micro | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ104L | Infineon | Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11 | Siemens | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11 | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ111S | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11A | ST Micro | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ12A | Infineon | Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BUZ357 | Infineon | Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | on request |
| BUZ76A | Infineon | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| CSD19502Q5B | TI | Power Field-Effect Transistor, 157A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMG2305UX-7 | Diodes | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMG6968U-7 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMN6070SSD-13 | Diodes | Power Field-Effect Transistor, 3.3A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMTH4004SPSQ-13 | Diodes | Power Field-Effect Transistor, 31A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCA20N60F | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCA47N60F | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCB11N60TM | Onsemi | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| FCD600N60Z | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FCP11N60F | Onsemi | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FCP190N60E | Onsemi | Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| FDA59N30 | Onsemi | Power Field-Effect Transistor, 59A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDB15N50 | Onsemi | Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB2532 | Onsemi | Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB2572 | Onsemi | Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB52N20TM | Onsemi | Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| FDB6670AL | Fairchild Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDD4685 | Onsemi | Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD5614P | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD5670 | Onsemi | Power Field-Effect Transistor, 21A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6637 | Onsemi | Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6690A | Onsemi | Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6N50FTM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD8444_F085 | Fairchild Semi | Power Field-Effect Transistor, 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD8586 | Fairchild Semi | Power Field-Effect Transistor, 35A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD8647L | Onsemi | Power Field-Effect Transistor, 14A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD8870-F085 | Onsemi | Power Field-Effect Transistor, 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDFS6N548 | Onsemi | Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC2523P | Onsemi | Power Field-Effect Transistor, 3A I(D), 150V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC6675BZ | Onsemi | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC86520L | Onsemi | Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229 | on request |
| FDMC8884 | Onsemi | Power Field-Effect Transistor, 9A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMQ8203 | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMS86310 | Fairchild Semi | Power Field-Effect Transistor, 17A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | on request |
| FDP26N40 | Fairchild Semi | Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDP2710_F085 | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDP3652 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDPF3860T | Onsemi | Power Field-Effect Transistor, 20A I(D), 100V, 0.0382ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDS2572 | Onsemi | Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| FDS2734 | Onsemi | Power Field-Effect Transistor, 3A I(D), 250V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS3992_NL | Fairchild Semi | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.062ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS4480 | Onsemi | Power Field-Effect Transistor, 10.8A I(D), 40V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS4559 | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS6982AS | Fairchild Semi | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS8958A | Onsemi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS8958A_NL | Fairchild Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT3N40TF | Fairchild Semi | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT434P | Fairchild Semi | Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT439N | Onsemi | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDW254P | Fairchild Semi | Power Field-Effect Transistor, 9.2A I(D), 20V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDWS9510L-F085 | Onsemi | Power Field-Effect Transistor, 50A I(D), 40V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | on request |
| FQAF13N80 | Onsemi | Power Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FQB11P06TM | Onsemi | Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB22P10TM | Onsemi | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB33N10LTM | Onsemi | Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB5N90TM | Onsemi | Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQD12N20TM | Onsemi | Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD13N10TF | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD17P06TF | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD17P06TM | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD2N80 | Fairchild Semi | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD5P20TM | Onsemi | Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7N30 | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7N30TM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7P20TM | Onsemi | Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQP27N25 | Onsemi | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP47P06 | Onsemi | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP50N06 | Onsemi | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP50N06L | Onsemi | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQPF13N50CF | Onsemi | Power Field-Effect Transistor, 13A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQU17P06TU | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | on request |
| FS8820 | Fortune | Power Field-Effect Transistor, 6.5A I(D), N-Channel, Metal-oxide Semiconductor FET | on request |
| HP4410DY | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IPB081N06L3G | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB17N25S3-100 | Infineon | Power Field-Effect Transistor, 17A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB200N25N3G | Infineon | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB80N04S403ATMA1 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB80N06S2L-06 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPD30N06S2L-13 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IPD30N08S2L-21 | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IPG20N04S4-08 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0076ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IPP120N04S3-02 | Infineon | Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IPP65R380C6 | Infineon | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IPW60R099C6 | Infineon | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| IRF1018EPBF | Infineon | Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF1018ESLPBF | Infineon | Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF1310NSPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF1404SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF150 | Harris | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| IRF220 | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| IRF250 | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | on request |
| IRF2804S-7PPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF2805STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3205STRRPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3205ZLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF3710LPBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF3710STRLPBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3710ZSPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF40H233 | Infineon | Power Field-Effect Transistor | on request |
| IRF520FI | ST Micro | Power Field-Effect Transistor, 7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF520NSPBF | Infineon | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF5210SPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF5210STRL | IR | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF5305 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF530A | Onsemi | Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF540NS | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF540NSTRLPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| IRF540NSTRRPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF540STRLPBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSTRLPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSTRRPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF620 | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630 | ST Micro | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630 | Harris | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630NSTRL | IR | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF640S | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF6641TR1PBF | IR | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6648TR1PBF | IR | Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6648TRPBF | Infineon | Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6892STR1PBF | IR | Power Field-Effect Transistor, 125A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| IRF7101PBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7301TRPBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7306 | Infineon | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF730S | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF7342D2PBF | IR | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7389TRPBF | Infineon | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF740A | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF740SPBF | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF7425PBF | IR | Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7425TRPBF | Infineon | Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7452TRPBF | Infineon | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7455TR | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7467PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7506TR | IR | Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7601TRPBF | Infineon | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7811APBF | IR | Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7853PBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7853TRPBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF8736TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF8910PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF9392PBF | Infineon | Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF9510PBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9520NPBF | Infineon | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9530 | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9530SPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9530STRLPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9540NS | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9620 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9630PBF | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9640SPBF | IR | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z14SPBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z14STRLPBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z24NPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9Z34S | Siliconix | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFB31N20DPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB4127PBF | Infineon | Power Field-Effect Transistor, 76A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB41N15DPBF | Infineon | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB59N10DPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFBE30STRLPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD014PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD024PBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD9024PBF | Vishay | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFF320 | Infineon | Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | on request |
| IRFH5053TRPBF | Infineon | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFH8201TRPBF | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| IRFHM8235TRPBF | Infineon | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFI4212H-117P | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.0725ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFI540NPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFIZ14GPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFL110TRPBF | Vishay | Power Field-Effect Transistor | on request |
| IRFL9014TRPBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRFP150PBF | Vishay | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP250NPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP260PBF | Vishay | Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP4227PBF | Infineon | Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP90N20DPBF | Infineon | Power Field-Effect Transistor, 90A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFPS3810PBF | Infineon | Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFR014 | Siliconix | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR014TR | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR110TR | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR1205TR | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR18N15DTRPBF | IR | Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR1N60ATR | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR220 | NXP | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR220NTRPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR2405PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR310 | Siliconix | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR3505PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR3910PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR4104PBF | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR48ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR7440PBF | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR825TRPBF | Infineon | Power Field-Effect Transistor, 6A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9010TRPBF | Vishay | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR9020 | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9024 | IR | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9024NPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9110PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9120 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9310 | Siliconix | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFS1Z0TRL | IR | Power Field-Effect Transistor, 0.82A I(D), 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | on request |
| IRFS3006-7PPBF | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| IRFS4227PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS4227TRLPBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS59N10DPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS59N10DTRLP | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFSL4710 | IR | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRFU1018EPBF | Infineon | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU320PBF | IR | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU3709ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU9210PBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | on request |
| IRFZ34N | Infineon | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFZ44N | IR | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFZ44NSPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFZ48STRR | IR | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFZ48ZPBF | IR | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3103PBF | Infineon | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3303SPBF | IR | Power Field-Effect Transistor, 38A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRL3402PBF | IR | Power Field-Effect Transistor, 85A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3502SPBF | IR | Power Field-Effect Transistor, 110A I(D), 20V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRL630S | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRL630STRRPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRL640STRLPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRLD024 | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLD120PBF | Vishay | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLIB4343PBF | IR | Power Field-Effect Transistor, 19A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRLL014N | IR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLL110TR | Siliconix | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLL2705 | Infineon | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLMS1503TRPBF | Infineon | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLMS1902TRPBF | Infineon | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLP3034PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRLR014TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRLR024NTR | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2703 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2905PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2905ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2908PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3103PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3705ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3717TRPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLU3636PBF | Infineon | Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRLU3705ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRLZ34NS | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IXFH36N60P | Littelfuse | Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | on request |
| IXFR140N20P | IXYS | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IXTH50N20 | IXYS | Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | on request |
| IXTM5N100A | IXYS | Power Field-Effect Transistor, 5A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| LND150N8-G | Microchip | Power Field-Effect Transistor | on request |
| MPS2907ARLRAG | Onsemi | Power Field-Effect Transistor | on request |
| MTB52N06VLT4 | Onsemi | Power Field-Effect Transistor, 52A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTD20P06HDLT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTD3055V-1 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTP12P10G | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| MTP3055EL | Motorola | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| NP110N055PUG-E1-AZ | Renesas | Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| NP88N04EHE-E1-AY | Renesas | Power Field-Effect Transistor, 88A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| NTB45N06G | Onsemi | Power Field-Effect Transistor, 45A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD20N06G | Onsemi | Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD2955G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD3055-094G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD3055L104-1G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD32N06LT4G | Onsemi | Power Field-Effect Transistor, 32A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD4302T4G | Onsemi | Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD6416ANLT4G | Onsemi | Power Field-Effect Transistor, 19A I(D), 100V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTDV20P06LT4G | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTGS3433T1 | Onsemi | Power Field-Effect Transistor | on request |
| NTMFS4934NT1G | Onsemi | Power Field-Effect Transistor | on request |
| NVTFS5826NLWFTAG | Onsemi | Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| PH8230E | Nexperia | Power Field-Effect Transistor, 67A I(D), 30V, 0.0132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| PHN210T | Nexperia | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| PSMN6R0-30YLB | Nexperia | Power Field-Effect Transistor, 71A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| PSMNR90-80ASEJ | Nexperia | Power Field-Effect Transistor, 495A I(D), 80V, 0.0009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-359 | on request |
| RFD3055SM | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| RFP4N05L | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RFP70N06 | Onsemi | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RJK0330DPB-01-J0 | Renesas | Power Field-Effect Transistor, 45A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| RJK0629JPE-00-J3 | Renesas | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| RLP1N06CLE | Intersil | Power Field-Effect Transistor, 3A I(D), 55V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RQA130N03TB | Rohm | Power Field-Effect Transistor, 13A I(D), 30V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SCT10N120 | ST Micro | Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | on request |
| SI2306DS-T1-E3 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI4465DY-T1 | Siliconix | Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4467DY | Siliconix | Power Field-Effect Transistor, 12A I(D), 12V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4532DY | Onsemi | Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4559EY-T1-E3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| SI4888DY | Vishay | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI4920DY | Vishay | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7117DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 1.1A I(D), 150V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7120ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7120DN-T1 | Vishay | Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI7409ADN-T1-E3 | Vishay | Power Field-Effect Transistor, 7A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7414DN-T1 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI7415DN-T1-E3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7434DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7460DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7464DP-T1-E3 | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7812DN-T1-E3 | Vishay | Power Field-Effect Transistor, 7.2A I(D), 75V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7848BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7923DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI8499DB-T2-E1 | Vishay | Power Field-Effect Transistor, 16A I(D), 20V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI9945AEY | Vishay | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA426DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.0236ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA433EDJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 20V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA436DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 8V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA444DJT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA921EDJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB404DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 12V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB433EDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 20V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB456DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 6.3A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIE868DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIHB24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SIJ478DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 80V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR462DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 18.9A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR492DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 27A I(D), 12V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR802DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 20V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR836DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIS413DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIS415DNT-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SISS10DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SISS98DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.1A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SK85MH10T | Semikron | Power Field-Effect Transistor, 80A I(D), 100V, 0.0075ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SKM180A020 | Semikron | Power Field-Effect Transistor, 180A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SPA20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPB07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SPP04N50C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPP08N80C3 | Infineon | Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPP11N80C3 | Infineon | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SQ2319ES-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | on request |
| SQ4917EY-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.048ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| SQD100N04-3M6L_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| SQD23N06-31L_GE3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQD50N05-11L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQD50P08-28_GE3 | Vishay | Power Field-Effect Transistor, 48A I(D), 80V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQJ402EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ403BEEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ443EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 40V, 0.029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ459EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 52A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ980AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJQ402E-T1_GE3 | Vishay | Power Field-Effect Transistor, 200A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQM120N10-3M8_GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB140NF55T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB30NE06L | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB55NE06 | ST Micro | Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB60NF06LT4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB70NF02LT4 | ST Micro | Power Field-Effect Transistor, 70A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB75NF75LT4 | ST Micro | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STD11N50M2 | ST Micro | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STD12NF06T4 | ST Micro | Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD16N65M2 | ST Micro | Power Field-Effect Transistor | on request |
| STD1NB50-1 | ST Micro | Power Field-Effect Transistor, 1.4A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| STD2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD30NF06LT4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD30NF06T4 | ST Micro | Power Field-Effect Transistor, 28A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD35NF06L | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD3NK80ZT4 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD5NM50T4 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD7NM80 | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD7NS20T4 | ST Micro | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD86N3LH5 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STE110NA20 | ST Micro | Power Field-Effect Transistor, 110A I(D), 200V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STE145N65M5 | ST Micro | Power Field-Effect Transistor | on request |
| STE26NA90 | ST Micro | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STF12N120K5 | ST Micro | Power Field-Effect Transistor | on request |
| STF40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STF7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STF8NK100Z | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STFI9N60M2 | ST Micro | Power Field-Effect Transistor | on request |
| STFW40N60M2 | ST Micro | Power Field-Effect Transistor | on request |
| STL10N65M2 | ST Micro | Power Field-Effect Transistor | on request |
| STL12P6F6 | ST Micro | Power Field-Effect Transistor | on request |
| STL160NS3LLH7 | ST Micro | Power Field-Effect Transistor | on request |
| STL16N65M2 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STL35N6F3 | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STL7DN6LF3 | ST Micro | Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STN4NF06L | ST Micro | Power Field-Effect Transistor, 4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STP120NF10 | ST Micro | Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP12N65M5 | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP140NF75 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP16NF06L | ST Micro | Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP19NB20FP | ST Micro | Power Field-Effect Transistor, 10A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP19NF20 | ST Micro | Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP24NF10 | ST Micro | Power Field-Effect Transistor, 26A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP25NM60ND | ST Micro | Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP3N150 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP55NF06FP | ST Micro | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP60NF10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP6N95K5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP6NB80 | ST Micro | Power Field-Effect Transistor, 5.7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP95N4F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP9NC60FP | ST Micro | Power Field-Effect Transistor, 9A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STQ1NK80ZR-AP | ST Micro | Power Field-Effect Transistor, 0.3A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | on request |
| STS25NH3LL | ST Micro | Power Field-Effect Transistor, 25A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STW11NK90Z | ST Micro | Power Field-Effect Transistor, 9.2A I(D), 900V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| STW18N60DM2 | ST Micro | Power Field-Effect Transistor | on request |
| STW20N95K5 | ST Micro | Power Field-Effect Transistor, 15.5A I(D), 950V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA | on request |
| STW25N95K3 | ST Micro | Power Field-Effect Transistor, 22A I(D), 950V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| STW45NM60 | ST Micro | Power Field-Effect Transistor, 45A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| STW75NF20 | ST Micro | Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | on request |
| STW88N65M5 | ST Micro | Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| STW9N150 | ST Micro | Power Field-Effect Transistor, 8A I(D), 1500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| SUB70N06-14 | Vishay | Power Field-Effect Transistor, 70A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUD06N10-225L-E3 | Siliconix | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD15N15-95-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD19N20-90-E3 | Vishay | Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD40N06-25L-E3 | Vishay | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUD45P03-15 | Siliconix | Power Field-Effect Transistor, 13A I(D), 30V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD45P03-15A | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD50N02-06P-E3 | Vishay | Power Field-Effect Transistor, 26A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD50N03-06P-E3 | Vishay | Power Field-Effect Transistor, 84A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUM110N08-10 | Siliconix | Power Field-Effect Transistor, 110A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM110N10-09-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM110P04-04L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 40V, 0.0042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM40N15-38-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM60N10-17-E3 | Vishay | Power Field-Effect Transistor, 60A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM80090E-GE3 | Vishay | Power Field-Effect Transistor, 128A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM90P10-19L-E3 | Vishay | Power Field-Effect Transistor, 17.2A I(D), 100V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUP75N05-06A | Siliconix | Power Field-Effect Transistor, 75A I(D), 50V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SUP75N05-06A-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUP75P03-07-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SUP75P05-08-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| TK130F06K3(TE24L) | Toshiba | Power Field-Effect Transistor, 130A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| TK16N60W,S1VF | Toshiba | Power Field-Effect Transistor | on request |
| TP2502N8 | Supertex | Power Field-Effect Transistor, 0.63A I(D), 20V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | on request |
| TPC8407 | Toshiba | Power Field-Effect Transistor | on request |
| UJN1208K | USCI | Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 | on request |
| VQ1000P | Vishay | Power Field-Effect Transistor, 0.025A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| ZXMC10A816N8TC | Diodes | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.23ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| ZXMS6002GTA | Diodes | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
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