Varactors componentes electrónicos en stock
ComSIT dispone de 77 números de parte de varactors (67 disponibles en stock) de 19 fabricantes. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Haga clic en un número de parte para ver las especificaciones completas, el estado del ciclo de vida y solicitar una cotización.
Classification: Semiconductors > Diodes > Varactors
Varactors por fabricante
| No. de Parte | Fabricante | Descripción | Disponibilidad |
|---|---|---|---|
| BB640 | Infineon | Variable Capacitance Diode, 69pF C(T), Silicon | 255,997 |
| BB135 | NXP | Variable Capacitance Diode, Ultra High Frequency, 19.25pF C(T), 30V, Silicon | 222,305 |
| BB639C | Infineon | Variable Capacitance Diode, Very High Frequency, 39pF C(T), 35V, Silicon | 209,482 |
| BB515 | Infineon | Variable Capacitance Diode, 16pF C(T) | 182,805 |
| MMBV105GLT1 | Onsemi | Variable Capacitance Diode, Ultra High Frequency, 2.15pF C(T), 30V, Silicon, Hyperabrupt, TO-236AB | 129,000 |
| BB804-SF2 | Infineon | Variable Capacitance Diode, 18V, Silicon | 114,802 |
| 1T379 | Sony | Variable Capacitance Diode, 6pF C(T), 30V, Silicon | 93,000 |
| BB814E6327GR1HTSA1 | Infineon | Variable Capacitance Diode | 71,435 |
| 1SV270 | Toshiba | Variable Capacitance Diode, Ultra High Frequency, 16pF C(T), 10V, Silicon | 66,890 |
| BB619 | Siemens | Variable Capacitance Diode, Very High Frequency, 38.7pF C(T), 30V, Silicon | 61,698 |
| BB729 | ITT Semi | Variable Capacitance Diode, 2.4pF C(T), Silicon | 61,495 |
| BB804-0 | Vishay | Variable Capacitance Diode, 42.75pF C(T), 18V, Silicon | 54,000 |
| BB640E6327 | Infineon | Variable Capacitance Diode, 69pF C(T), Silicon | 47,965 |
| BB804 | Infineon | Variable Capacitance Diode, 44.75pF C(T), 18V, Silicon, Abrupt | 45,410 |
| ZC831BTA | Diodes | Variable Capacitance Diode, 15pF C(T), 25V, Silicon, Hyperabrupt | 42,000 |
| HVM16TR | Renesas Tech | Variable Capacitance Diode, 14V, Silicon | 31,330 |
| BB833E6327 | Infineon | Variable Capacitance Diode, S Band, 9.3pF C(T), 35V, Silicon | 31,112 |
| BB152 | NXP | Variable Capacitance Diode, Very High Frequency, 57pF C(T), 32V, Silicon | 30,078 |
| BB112 | Siemens | Variable Capacitance Diode, 23pF C(T), 12V, Silicon, TO-92 | 27,245 |
| BB505G | Siemens | Variable Capacitance Diode, 17pF C(T) | 26,159 |
| BB801 | Infineon | Variable Capacitance Diode, 1pF C(T) | 25,935 |
| BB804-2-GS08 | Vishay | Variable Capacitance Diode | 23,630 |
| BBY40 | NXP | Variable Capacitance Diode, Very High Frequency, 29pF C(T), 30V, Silicon, Abrupt, TO-236AB | 22,800 |
| BB535-E7904 | Infineon | Variable Capacitance Diode, 18.7pF C(T) | 21,885 |
| BB804SF1-E6327 | Infineon | Variable Capacitance Diode, 43.75pF C(T) | 18,840 |
| BB729 | Vishay | Variable Capacitance Diode, Very High Frequency, 30pF C(T), 32V, Silicon | 18,550 |
| SVC212-3 | Sanyo | Variable Capacitance Diode, 16V, Silicon | 17,375 |
| BB731 | ITT Semi | Variable Capacitance Diode, 2.9pF C(T), Silicon | 15,000 |
| BBY56-03W-E6327 | Infineon | Variable Capacitance Diode, 40pF C(T) | 15,000 |
| BB134 | NXP | Variable Capacitance Diode, Ultra High Frequency, 17.5pF C(T), 30V, Silicon | 13,500 |
| BB105G | Iskra Semi | Variable Capacitance Diode, 1.8pF C(T) | 12,996 |
| BB179B | NXP | Variable Capacitance Diode, Ultra High Frequency, 19.11pF C(T), 32V, Silicon | 12,000 |
| BB207 | NXP | Variable Capacitance Diode, 81pF C(T), Silicon, TO-236AB | 10,000 |
| GVD30504-004 | Sprague-Goodman | Variable Capacitance Diode, 26pF C(T), 25V, Silicon, Hyperabrupt | 10,000 |
| BB837 | Infineon | Variable Capacitance Diode, 6.6pF C(T), Silicon | 9,445 |
| BB824-2-GS08 | Vishay | Variable Capacitance Diode, 43.05pF C(T), 18V, Silicon | 8,115 |
| BB555-02V-H7912 | Infineon | Variable Capacitance Diode, 18.7pF C(T) | 8,000 |
| BB621 | TDK | Variable Capacitance Diode, 2pF C(T) | 7,837 |
| BB145B | NXP | Variable Capacitance Diode, 6.8pF C(T), 6V, Silicon | 6,000 |
| BB804-3 | Vishay | Variable Capacitance Diode, 45.75pF C(T), 18V, Silicon | 5,985 |
| BB824-2-V-GH-08 | Vishay | Variable Capacitance Diode, 43.15pF C(T), 18V, Silicon | 5,765 |
| BB804 | NXP | Variable Capacitance Diode, Very High Frequency, 44.25pF C(T), 18V, Silicon, TO-236AB | 5,425 |
| BB639 | Infineon | Variable Capacitance Diode, Very High Frequency, 38.3pF C(T), 30V, Silicon | 4,903 |
| 1SV282(TPH2,F) | Toshiba | Variable Capacitance Diode | 4,715 |
| BB804-4-GS08 | Vishay | Variable Capacitance Diode | 4,440 |
| BB804-2 | Vishay | Variable Capacitance Diode, 44.75pF C(T), 18V, Silicon | 4,295 |
| BB505B | Infineon | Variable Capacitance Diode, 18pF C(T) | 4,180 |
| BB545 | Infineon | Variable Capacitance Diode, Ultra High Frequency, 20pF C(T), Silicon | 4,150 |
| 1SV278B | Toshiba | Variable Capacitance Diode, 30V, Silicon | 4,000 |
| KV1471ETR-G | Toko | Variable Capacitance Diode, 35.6pF C(T), 18V, Silicon | 3,885 |
| BB639-E7904 | Infineon | Variable Capacitance Diode, 38.3pF C(T) | 3,740 |
| 1SV225 | Toshiba | Variable Capacitance Diode, 19.7pF C(T), 32V, Silicon | 3,720 |
| BB112 | NXP | Variable Capacitance Diode, 440pF C(T), Silicon, TO-92 | 3,288 |
| 1SV229(TPH3,F) | Toshiba | Variable Capacitance Diode, Ultra High Frequency, 15pF C(T), 15V, Silicon, Abrupt | 3,000 |
| BB535E7908 | Infineon | Variable Capacitance Diode, 18.7pF C(T) | 3,000 |
| BB729S | ITT Semi | Variable Capacitance Diode, Silicon | 3,000 |
| MMBV105GLT1G | Onsemi | Variable Capacitance Diode, Ultra High Frequency, 2.15pF C(T), 30V, Silicon, Hyperabrupt, TO-236AB | 3,000 |
| BB189 | NXP | Variable Capacitance Diode, Ultra High Frequency, 14.95pF C(T), 32V, Silicon | 2,980 |
| BB208-02 | NXP | Variable Capacitance Diode, 10.1pF C(T), Silicon | 2,530 |
| BB219 | NXP | Variable Capacitance Diode, Very High Frequency, 30V, Silicon | 2,500 |
| BBY52-03WE6327 | Infineon | Variable Capacitance Diode, 1.85pF C(T), 7V, Silicon, Hyperabrupt | 2,495 |
| MAVR-000403-0287AT | M/A-com Tech | Variable Capacitance Diode, High Frequency to Ultra High Frequency, 15pF C(T), 30V, Silicon, Hyperabrupt | 1,875 |
| BB131 | NXP | Variable Capacitance Diode, Very High Frequency, 12.5pF C(T), 30V, Silicon | 1,820 |
| 1SV229 | Toshiba | Variable Capacitance Diode, Ultra High Frequency, 15pF C(T), 15V, Silicon | 1,465 |
| SMV1202-08 | Skyworks | Variable Capacitance Diode, Very High Frequency to S Band, 55pF C(T), 20V, Silicon, Hyperabrupt | 1,025 |
| BB515 | Siemens | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18.7pF C(T), 30V, Silicon | 1,000 |
| SMV1251-001 | Alpha | Variable Capacitance Diode, 42pF C(T), 15V, Silicon, Hyperabrupt | 895 |
| BBY52-03W | Infineon | Variable Capacitance Diode, 1.85pF C(T), 7V, Silicon, Hyperabrupt | 864 |
| 1SV280,H3F | Toshiba | Variable Capacitance Diode, Ultra High Frequency, 4.25pF C(T), 15V, Silicon, Abrupt | 815 |
| BB148 | Philips Semi | Variable Capacitance Diode, 36pF C(T) | 560 |
| BB857-H7902 | Infineon | Variable Capacitance Diode, 6.6pF C(T), Silicon, Abrupt | 135 |
| BB147 | NXP | Variable Capacitance Diode, Very High Frequency, 102pF C(T), Silicon | on request |
| BB512 | Infineon | Variable Capacitance Diode, 470pF C(T) | on request |
| BB639CE7904 | Infineon | Variable Capacitance Diode, 39pF C(T) | on request |
| BB669-E7904 | Infineon | Variable Capacitance Diode, 56.5pF C(T) | on request |
| BB804 | Vishay | Variable Capacitance Diode, 42pF C(T) | on request |
| BB814-1-GS08 | Vishay | Variable Capacitance Diode, 18V, Silicon | on request |
| BB833E6433 | Infineon | Variable Capacitance Diode, S Band, 9.3pF C(T), 35V, Silicon | on request |
| BB837E6327 | Infineon | Variable Capacitance Diode, S Band, 6.6pF C(T), Silicon | on request |
| BBY58-02W-E6327 | Infineon | Variable Capacitance Diode, 18.3pF C(T) | on request |
| BBY58-05W-E6327 | Infineon | Variable Capacitance Diode, 18.3pF C(T) | on request |
| BBY66-05W-H6327 | Infineon | Variable Capacitance Diode, 68.7pF C(T) | on request |
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