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HGTD1N120BNS9A Insulated Gate Bipolar Transistors
Onsemi
ComSIT tiene 46,917 unidades de HGTD1N120BNS9A de Onsemi en stock. Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA. Ciclo de vida: Active / Mature. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Solicite una cotización
Todos los componentes de Onsemi · Todos: Insulated Gate Bipolar Transistors
| STOCK | 46917 |
| PARTNUMBER | HGTD1N120BNS9A |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 5.3A, 1200V, NPT SERIES N-CHANNEL IGBT |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 30-Aug-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 46917 |
