PARTE:
FQPF19N10 Power Field-Effect Transistors
Onsemi
ComSIT tiene 600 unidades de FQPF19N10 de Onsemi en stock. Power Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Ciclo de vida: EOL / Phase-Out. Conforme a RoHS. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Solicite una cotización
Todos los componentes de Onsemi · Todos: Power Field-Effect Transistors
| STOCK | 600 |
| PARTNUMBER | FQPF19N10 |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 100 V, 13.6 A, 100 MILLI OHM N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | TO-220F, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 23-Dec-2021 |
| PART STATUS | EOL |
| LIFECYCLESTAGE | Phase-Out |
| STOCK | 600 |
