ARTICOLO:
MGF0913A-03 / MGF0913A03 RF Power Field-Effect Transistors
Mitsubishi (MITSUBISHI ELECTRIC CORP)
MGF0913A-03 di Mitsubishi (MITSUBISHI ELECTRIC CORP) è disponibile presso ComSIT su richiesta. RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET. Ciclo di vita: Discontinued / Discontinued. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Mitsubishi · Tutti: RF Power Field-Effect Transistors
| PARTNUMBER | MGF0913A-03 |
| MANUFACTURER | Mitsubishi (MITSUBISHI ELECTRIC CORP) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | L & S BAND GAAS FET [ SMD NON-MATCHED ] |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET |
| MFR. PKG. DESC. | HERMETIC SEALED, SMD, 3 PIN |
| LC CODE | 5.00 |
| CAGE CODE | J4314 |
| ALERT DATE | 28-Dec-2015 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
