PART:
FCB11N60TM Power Field-Effect Transistors
Onsemi
FCB11N60TM from Onsemi is available from ComSIT on request. Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263. Lifecycle: Active / Mature. RoHS compliant. Original certified parts, best price, fast worldwide delivery. Request a quote
All Onsemi parts · All Power Field-Effect Transistors
| PARTNUMBER | FCB11N60TM |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 600 V, 11 A, 380 MILLI OHM N-CHANNEL SUPERFET MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 |
| MFR. PKG. DESC. | D2PAK-3 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
