PART:
IPB200N25N3G Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
IPB200N25N3G from Infineon (INFINEON TECHNOLOGIES AG) is available from ComSIT on request. Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Lifecycle: Active / Mature. RoHS compliant. Original certified parts, best price, fast worldwide delivery. Request a quote
All Infineon parts · All Power Field-Effect Transistors
| PARTNUMBER | IPB200N25N3G |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | OPTIMOS3 POWER-TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263, 3 PIN |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
