料号：
2SJ352-E / 2SJ352E Power Field-Effect Transistors
Renesas (RENESAS ELECTRONICS CORP)
Renesas (RENESAS ELECTRONICS CORP) 的 2SJ352-E 可向 ComSIT 询购。 Power Field-Effect Transistor, 8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET. 生命周期：NRFND / Decline。 符合 RoHS。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
Renesas 全部元器件 · 全部 Power Field-Effect Transistors
| PARTNUMBER | 2SJ352-E |
| MANUFACTURER | Renesas (RENESAS ELECTRONICS CORP) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | SILICON P CHANNEL MOS FET |
| DESCRIPTION | Power Field-Effect Transistor, 8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SC-65, TO-3P, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 6LTM0, 34371, 8QEK4, 4MHN3 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
