BAUTEIL:
MGFC36V5258-01 / MGFC36V525801 RF Power Field-Effect Transistors
Mitsubishi (MITSUBISHI ELECTRIC CORP)
ComSIT hat 15 Stück MGFC36V5258-01 von Mitsubishi (MITSUBISHI ELECTRIC CORP) auf Lager. RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Mitsubishi · Alle RF Power Field-Effect Transistors
| STOCK | 15 |
| PARTNUMBER | MGFC36V5258-01 |
| MANUFACTURER | Mitsubishi (MITSUBISHI ELECTRIC CORP) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | 5.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET |
| LC CODE | 5.00 |
| CAGE CODE | J4314 |
| ALERT DATE | 28-Dec-2015 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 15 |
