BAUTEIL:
PD20010-E / PD20010E RF Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ComSIT hat 148 Stück PD20010-E von ST Micro (STMICROELECTRONICS) auf Lager. RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von ST Micro · Alle RF Power Field-Effect Transistors
| STOCK | 148 |
| PARTNUMBER | PD20010-E |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL ENHANCEMENT-MODE LDMOST PLASTIC FAMILY RF POWER TRANSISTOR LATERAL MOSFET |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN |
| LC CODE | 5.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 10-Dec-2021 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 148 |
