BAUTEIL:
PD55025S-E / PD55025SE RF Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
PD55025S-E von ST Micro (STMICROELECTRONICS) ist bei ComSIT auf Anfrage erhältlich. RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von ST Micro · Alle RF Power Field-Effect Transistors
| PARTNUMBER | PD55025S-E |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | LDMOST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE, LATERAL MOSFET, RF POWER TRANSISTOR |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN |
| LC CODE | 3.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 27-Oct-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
