BAUTEIL:
BLF6G22-45 / BLF6G2245 RF Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT hat 12 Stück BLF6G22-45 von NXP (NXP SEMICONDUCTORS) auf Lager. RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von NXP · Alle RF Power Field-Effect Transistors
| STOCK | 12 |
| PARTNUMBER | BLF6G22-45 |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | POWER LDMOS TRANSISTOR |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | ROHS COMPLIANT, CERAMIC PACKAGE-3 |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| ALERT DATE | 05-Jul-2015 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 12 |
