料号：
UJN1208K Power Field-Effect Transistors
USCI (UNITED SILICON CARBIDE INC)
USCI (UNITED SILICON CARBIDE INC) 的 UJN1208K 可向 ComSIT 询购。 Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247. 生命周期：Contact Mfr。 符合 RoHS。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
USCI 全部元器件 · 全部 Power Field-Effect Transistors
| PARTNUMBER | UJN1208K |
| MANUFACTURER | USCI (UNITED SILICON CARBIDE INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 80 MILLI OHM-1200 V SIC NORMALLY-ON JFET |
| DESCRIPTION | Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 |
| MFR. PKG. DESC. | TO-247, 3 PIN |
| LC CODE | 0.00 |
| PART STATUS | Contact Mfr |
