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UJN1208K Power Field-Effect Transistors
USCI (UNITED SILICON CARBIDE INC)
UJN1208K de USCI (UNITED SILICON CARBIDE INC) está disponible en ComSIT bajo pedido. Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247. Ciclo de vida: Contact Mfr. Conforme a RoHS. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Solicite una cotización
Todos los componentes de USCI · Todos: Power Field-Effect Transistors
| PARTNUMBER | UJN1208K |
| MANUFACTURER | USCI (UNITED SILICON CARBIDE INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 80 MILLI OHM-1200 V SIC NORMALLY-ON JFET |
| DESCRIPTION | Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 |
| MFR. PKG. DESC. | TO-247, 3 PIN |
| LC CODE | 0.00 |
| PART STATUS | Contact Mfr |
